排序方式: 共有5条查询结果,搜索用时 0 毫秒
1
1.
2.
LaON, LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La2O3 using the sputtering method to fabricate Ge MOS capacitors, and the electrical properties of the devices are carefully examined. LaON/Ge capacitors exhibit the best interface quality, gate leakage property and device reliability, but a smaller k value (14.9). LaTiO/Ge capacitors exhibit a higher k value (22.7), but a deteriorated interface quality, gate leakage property and device reliability. LaTiON/Ge capacitors exhibit the highest k value (24.6), and a relatively better interface quality (3.1E11 eV^-1cm^-2), gate leakage property (3.6E3 A/cm^2 at Vg = 1 V + Vfb) and device reliability. Therefore, LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials. 相似文献
3.
为了提高传统 Mean Shift 算法在目标快速运动和被大面积遮挡两种情况下跟踪的效果,对 Mean Shift 跟踪算法进行了3点改进:采用 Kalman 滤波器预测运动目标轨迹,以提高算法对快速运动目标的鲁棒性;提出了一种融合Kalman 滤波器残差和 Bhattacharyya 系数的遮挡处理机制,以提高目标被大面积遮挡时的跟踪效果;提出了一种基于自适应更新因子的目标模型更新机制,以提高动态适应能力。对比实验结果表明,改进算法能有效提高在上述两种情况下的跟踪效果,并且在遮挡情况下具有较好的鲁棒性。 相似文献
4.
5.
将垂直于栅氧化层/衬底界面方向的反型层电势分布规律近似为耗尽层的电势分布规律,采用WKB近似方法求解薛定谔方程,得到了量子机制下分析MOSFETs反型层的解析模型,进而对Al/SiO2/p-Si MOSFETs能级、子带电子密度和反型层质心进行了模拟计算,并将模拟结果与数值自洽结果进行了比较,模拟结果较好地与数值自洽结果相吻合。 相似文献
1