侧钻井弯曲段套管抗挤强度研究及应用

为了确保侧钻井造斜段套管抗挤强度能够满足钻井作业过程中的安全要求,建立了套管在受到弯曲载荷状态下的力学模型,对其进行理论分析,并利用ANSYS有限元软件模拟验证,研究套管抗挤强度与弯曲曲率、径厚比及轴向载荷之间的关系。研究结果表明:套管的抗挤强度随套管弯曲率的增加而降低,且管壁越薄下降速度越快,当套管弯曲率到达套管极限时,套管抗挤强度几乎相等;在一定的曲率条件下,套管抗挤强度随着径厚比的增加而降低;同一套管规格和尺寸条件下,外径小的抗挤强度随径厚比下降速度趋势远大于外径较大的套管;随着曲率的增加,径厚比与套管抗挤强度关系变的越来越平缓,因此,径厚比对抗挤强度的影响不是固定的。在弯曲条件下,同时考虑弯曲载荷和综合轴向载荷时,随着套管弯曲率的增加,轴向载荷对套管抗挤强度的影响在逐渐减少。研究成果可以为侧钻井造斜段套管的抗挤强度的设计提供参考。     

一种QFN24封装的适用于0.5GHz-3GHz应用的4X2矩阵开关

This paper presents a 4×2 switching matrix implemented in the Win 0.5 m Ga As pseudomorphic high electron mobility transistor process, it covers the 0.5–3 GHz frequency range. The switch matrix is composed of 4 SPDT switch whose two output ports can simultaneously select the input port and a 4 to 8 bit digital decoder,both the radio frequency(RF) part and the digital part are integrated into one single chip. The chip is packaged in a low cost QFN24 plastic package. On chip shunt, capacitors at the input ports are taken to compensate for the bonding wire inductance effect. The designed switch matrix shows a good measured performance: the insertion loss is less than 5.5 d B, the isolation is no worse than 30 d B, the return loss of input ports and output ports is better than –10 d B, the input 1 d B compression point is better than 25.6 d Bm, and the OIP3 is better than 37 d Bm. The chip size of the switch matrix is only 1.45×1.45 mm2.