硅基高长径比微孔列阵及其应用

介绍了硅基高长径比微孔列阵形成的多路感应耦合等离子体刻蚀和电化学刻蚀等半导体工艺技术,给出了实验系统、原理、方法和实验结果,指出了工艺中出现的新现象和亟待解决的新问题,阐述了其在二维通道电子倍增器-微通道板中的应用。     

Simulation Investigation on Particle Transmission Characteristics of Two Different Ion Barrier Films

The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films （IBFs） of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and solids are described. It is found that at the same conditions, the electron transmittance for SiO2 IBF is relatively higher than that of Al2O3 IBF, and the ion stopping power of SlOE IBF is relatively lower than that of Al2O3 by Monte Carlo simulations. It is also indicated that SiO2 is one of the ideal materials for fabricating IBFs.     

电流密度对光电化学腐蚀宏孔硅阵列形貌的影响

宏孔硅阵列(MSA)在光子晶体、硅微通道板、MEMS 器件等领域应用前景广阔,引起人们广泛关注。为制备理想的MSA结构,本文开展了MSA光电化学方法腐蚀实验,重点研究了腐蚀电流密度对宏孔形貌的影响。给出了n型硅抛光片背面光照情况下在氢氟酸溶液中的电流-电压扫描曲线,讨论了临界电流密度JPS的意义和MSA稳定生长的基本电流密度条件。提出了一种间接地测量JPS与腐蚀时间关系的方法,并根据JPS的测量结果调整腐蚀电流,实现了理想的MSA等径生长,制备出孔深度为295m,长径比为98的MSA结构。     

防离子反馈膜粒子阻透率随环境温度变化的模拟研究

覆有防离子反馈膜的微通道板是第三代微光像增强器的核心部件之一。真空高温烘烤除气过程对防离子反馈膜粒子阻透特性会产生破坏性的影响。文中利用分子动力学方法模拟计算并得到Al2O3 薄膜的膜层密度随环境温度的变化规律。利用蒙特卡洛方法模拟计算了Al2O3 薄膜的电子透过率和离子阻挡率随入射粒子能量的变化曲线。得到Al2O3 薄膜的死电压在235 V 左右,同时得出防离子反馈膜离子阻挡率在入射离子能量降低后有所增加。在入射离子能量降低为250 eV 时,C、N、O 离子被Al2O3 薄膜阻挡的比率高达96%-99%。综合以上因素分析得出,随着外部温度的升高,电子透过率线性增加,而离子阻挡率非线性的下降。合理优化并调整高温烘烤时间和量值将有助于防离子反馈膜工作性能的改善。     

Influence of voltage on photo-electrochemical etching of n-type macroporous silicon arrays

The influence of voltage on photo-electrochemical etching(PEC) of macroporous silicon arrays(MSA) was researched.According to the theory of the space charge region,I-V scan curves and the reaction mechanism of the n-type silicon anodic oxidation in HF solution under different current densities,the pore morphology influenced by the working voltage were studied and analyzed in detail.The results show that increasing the etching voltage will lead to distortion of the pore morphology,decreasing etching volta...     

短纤维/弹性体复合材料的性能——Ⅰ.涤纶短纤维补强再生胶

将涤纶短纤维(F)与胎面再生胶(R)进行共混,并加入粘合剂可以制得一种综合性能较好的复合材料(SFRC)。实验结果表明,当F含量为8～9质量份,F的L/D=643,D=14μm时,补强效果较好;加入粘合剂HRH和RH的SFRC试样,其拉伸强度比不加粘合剂时提高0.4～3.1MPa,由于白炭黑有增粘作用,HRH比RH更好些;加入新型粘合剂GBS,可使SFRC的主要力学性能接近或超过用新橡胶制得的SFRC。     

电压对N型宏孔硅阵列光电化学腐蚀的影响

研究了电压对宏孔硅阵列光电化学腐蚀的影响. 根据空间电荷区理论、N型硅片在HF酸溶液中I-V扫描曲线、不同电流密度条件下硅阳极氧化反应机理,系统地分析研究了腐蚀电压对宏孔硅阵列形貌的影响.研究结果表明：电压升高使孔型变差,电压降低则盲孔率提高,腐蚀电压恒定、长时间腐蚀孔将逐渐分叉。根据理论分析,优化了工艺参数,制备出高长径比宏孔硅阵列结构,孔深度为317m,方孔边长为3m,长径比为105。     

Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching

Macroporous silicon arrays(MSA) have attracted much attention for their potential applications in photonic crystals,silicon microchannel plates,MEMS devices and so on.In order to fabricate perfect MSA structure,photo-electrochemical (PEC) etching of MSA and the influence of etching current on the pore morphology were studied in detail.The current-voltage curve of a polished n-type silicon wafer was presented in aqueous HF using back-side illumination.The critical current density J_(PS) was discussed and ...     

含螺噁嗪的SiO2变色凝胶实时全息记录光栅

通过本体溶胶-凝胶方法制备了含6′-哌啶-1,3,3-三甲基螺[吲哚-2,3-′[3H]萘-[2,1-b][1,4]噁嗪]的光活性SiO2凝胶。光栅生长曲线显示该光活性凝胶具有快速光响应。在紫外光的预激发下用He-Ne激光器写入光栅时衍射效率的变化规律显示螺噁嗪的光致变色有光致构造异构和光致顺反异构两个竞争过程。通过紫外激发光源的开启和闭合对实时全息光栅的衍射信号进行了调制。     

连续油管技术在定向井酸化中的应用

随着连续油管技术的不断发展,连续油管技术在酸化增产中了得到了更好的应用,特别是在水平井中更能发挥连续油管的优点,直接对水平井油层段进行布酸,通过连续油管拖动实现定向酸化,为水平井油层增产提供了良好的平台。