Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated.     

Investigation of Nanometer- and Submicron-Size Dispersed Phases in Titanium Pseudo- β -Alloys using Scattering and Diffraction of Neutrons,Electrons, and X-Ray Radiation

Metal Science and Heat Treatment - The size and volume fraction of fine particles of secondary β -phase formed during hardening heat treatment of pseudo-β-titanium alloy VT22 are...     

On the Advantages of Local Measurement of Coercive Force of Ferromagnetic Objects Based on Internal Field

Russian Journal of Nondestructive Testing - It has been shown that locally measuring coercive force $${{H}_{{\text{c}}}}$$ based on the magnitude of demagnetizing current has a fundamental...     

Study of the Electrophysical Properties of Colloidal Indium Antimonide Quantum Dots

Technical Physics Letters - The mechanisms of current transport through indium antimonide quantum dots (QDs) have been examined by analyzing normalized differential tunneling current–voltage...     

Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window

Semiconductors - Stimulated emission based on interband transitions depending on the pumping wavelength is studied for heterostructures with Hg(Cd)Te/CdHgTe quantum wells in the wavelength region...     

Instantaneous Learning in Pattern Recognition

Automation and Remote Control - One of the main disadvantages of artificial neural networks is slow learning associated with the need to calculate a large number of coefficients. The article shows...     

Development of a model of information dissemination in society

This paper is devoted to developing a system of models of information dissemination in society. As a superstructure for the base model, four new mechanisms that have an effect on information disseminating are proposed. For the model with these four mechanisms, sufficient conditions of the stability of the nonadherent state are obtained.