Effect of texture on oxidation resistance of Ti3AlC2

Oxidation resistance of textured Ti₃AlC₂ ceramics was measured in the temperature range 1273–1573?K. It was found that the oxidation was markedly anisotropic and the samples exhibited a better oxidation resistance when tested along a direction transverse to the c-axis. This behavior was attributed to the rapid diffusion of Al within its basal planes to form a passivating Al₂O₃ scale and it respected Ellingham diagrams. The scales formed had different compositions depending on the testing direction; this response was clearly resulting from the crystallographic orientation. Even at 1473?K after 20?h exposure, the samples tested in a direction transverse to the c-axis showed a reduced weight gain which was 45 times lower than one seen on a basal plane.     

Distribution of carbon contamination in MgAl2O4 spinel occurring during spark-plasma-sintering (SPS) processing: I – Effect of heating rate and post-annealing

Carbon contamination from the carbon paper/dies during spark-plasma-sintering (SPS) processing was examined in the MgAl₂O₄ spinel. The carbon contamination sensitively changes with the heating rate during the SPS processing. At the high heating rate of 100 °C/min, the carbon contamination having organized structures occurred over almost the entire area from the surface to deep inside the SPSed spinel disk. In contrast, at the slow heating rate of 10 °C/min, the carbon contamination having disordered structures occurred only around the surface area. The carbon phases transform into high pressure CO/CO₂ gases by post-annealing in air and lead to pore formation along the grain junctions. The pore formation significantly occurs at the high heating rate due to the large amount of the contaminant carbon phases. This suggests that if once the carbon contamination was formed in the materials, it is very difficult to remove the carbon phases from the materials.     

Micromechanical Investigation of the Fatigue Crack Propagation and Damage Development in Al/Al2O3/SiC Hybrid Metal Matrix Composite

Russian Journal of Non-Ferrous Metals - In this study, the micro-mechanisms involved in fatigue crack propagation are investigated qualitatively in a Al/Al2O3/SiC hybrid metal matrix composite...     

Identification and Characterization of D‐Succinylase,and a Proposed Enzymatic Method for D‐Amino Acid Synthesis

Chiral amino acids are important intermediates for the pharmaceutical industry. We have developed a novel one‐pot enzymatic method for D ‐amino acid synthesis by the dynamic kinetic resolution of N‐succinyl‐dl ‐amino acids using D ‐succinylase (DSA) and N‐succinylamino acid racemase (NSAR, EC 4.2.1.113). The DSA from Cupriavidus sp. P4‐10‐C, which hydrolyzes N‐succinyl‐D ‐amino acids enantioselectively to their corresponding D ‐amino acids, was identified for the first time by screening soil microorganisms. Subsequently, the DSA gene was cloned and overexpressed in Escherichia coli. DSA was shown to comprise two subunits with molecular masses of 26 kDa and 60 kDa. Additionally, the NSAR gene from Geobacillus stearothermphilus NCA1503, which racemizes N‐succinylamino acids, was also cloned and overexpressed in E. coli. The highly purified DSA and NSAR prepared from each recombinant E. coli were characterized and used for D ‐amino acid synthesis. A one‐pot enzymatic method converted 100 mM N‐succinyl‐dl ‐phenylalanine to D ‐phenylalanine in 91.1% conversion with 86.7% ee. This novel enzymatic method may be useful for the industrial production of many D ‐amino acids.

     

Synthesis of High‐Purity Ti3SiC2 by Microwave Sintering

High‐purity ternary laminated compound Ti₃SiC₂ was successfully synthesized by a microwave heating method in the flowing argon for the first time. The mixtures of titanium, silicon, and graphitic carbon (C_gc) or activated carbon (C_ac) with different molar ratios were used to investigate the reaction mechanisms. It was confirmed that Ti₃SiC₂ with high purity of 98 vol.% was achieved without the aids of Al. The optimum experimental parameters were determined as Ti/Si/C_gc having the molar ratio of 3/2.2/2, first holding at 1480°C for 30 min, and subsequent dwelling at 1300°C for 60 min.     

On the aggregation problem in input-output models

The purpose of this paper is to shed new light on the consistent aggregation problem in input-output systems by making use of some properties ofM-matrices. For example, we show that the stability of a multisectoral dynamic multiplier model is invariant under consistent aggregation, that a consistently aggregated dynamic Leontief model is relatively stable if the original system is stable, and that Gillen and Guccione's Third Proposition can be generalized to cover the case of weighted aggregation.     

Modeling resistive switching materials and devices across scales

Resistance switching devices based on electrochemical processes have attractive significant attention in the field of nanoelectronics due to the possibility of switching in nanosecond timescales, miniaturization to tens of nanometer and multi-bit storage. Their deceptively simple structures (metal-insulator-metal stack) hide a set of complex, coupled, processes that govern their operation, from electrochemical reactions at interfaces, diffusion and aggregation of ionic species, to electron and hole trapping and Joule heating. A combination of experiments and modeling efforts are contributing to a fundamental understanding of these devices, and progress towards a predictive understanding of their operation is opening the possibility for the rational optimization. In this paper we review recent progress in modeling resistive switching devices at multiple scales; we briefly describe simulation tools appropriate at each scale and the key insight that has been derived from them. Starting with ab initio electronic structure simulations that provide an understanding of the mechanisms of operation of valence change devices pointing to the importance of the aggregation of oxygen vacancies in resistance switching and how dopants affect performance. At slightly larger scales we describe reactive molecular dynamics simulations of the operation of electrochemical metallization cells. Here the dynamical simulations provide an atomic picture of the mechanisms behind the electrochemical formation and stabilization of conductive metallic filaments that provide a low-resistance path for electronic conduction. Kinetic Monte Carlo simulations are one step higher in the multiscale ladder and enable larger scale simulations and longer times, enabling, for example, the study of variability in switching speed and resistance. Finally, we discuss physics-based simulations that accurately capture subtleties of device behavior and that can be incorporated in circuit simulations.