Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Ternary Ⅲ-Ⅴ nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield,reprodudbility,and tunable optical absorption.Here,we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP NW arrays using metal-organic vapor phase epitaxy and detail their optical properties.A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array.The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy.Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved.Transmission electron microscopy and energy dispersive X-ray measurements performed on crosssection samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.     

In-Plane Coupling of Light From InP-Based Photonic Crystal Band-Edge Lasers Into Single-Mode Waveguides

In this paper, we analyze the coupling of light from photonic-crystal band-edge lasers into single-mode waveguides. Both active and passive devices lie in the same plane and coupling of light is achieved by using parabolic and nanotapers in InP based epitaxial structures. Two- and three-dimensional finite-difference time-domain methods are employed to analyze these devices. Coupling efficiencies higher than 80% can be obtained with parabolic couplers. We also present laser configurations that can reduce multiwavelength coupling of light into single-mode waveguides, using structures that are similar to coupled cavity Fabry-Peacuterot lasers     

Distributed non-negative matrix factorization with determination of the number of latent features

The Journal of Supercomputing - The holistic analysis and understanding of the latent (that is, not directly observable) variables and patterns buried in large datasets is crucial for data-driven...     

Performance Analysis of Multi User Mimo System With Successive Hybrid Information and Energy Transfer Beamformer

Wireless Personal Communications - Alzheimer’s Disease is a degenerative neurological disease that progresses slowly and gradually. Currently incurable, and those who suffer from it deprive...     

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process

We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate. The lower temperature employed for subsequent growth imparts superior nanowire morphology and crystallographic quality by minimizing radial growth and eliminating twinning defects. Photoluminescence measurements confirm the excellent optical quality of these two-temperature grown nanowires. Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.     

Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires

Catalyst-free InGaAs nanowires grown by selective area epitaxy are promising building blocks for future optoelectronic devices in the infrared spectral region.D...