CdZnTe晶体(111)面、(110)面和(100)面的蚀坑形貌观察

利用CdZnte晶体晶面夹角之间的关系采用激光正反射法对改进布里奇曼法生长的CdZnTe单晶进行定向,研磨出了CdZnTe单晶体的(111)、(100)面.采用自行研制的HHKA腐蚀液对三个面进行择优腐蚀,得到了(111)、(100)和(110)面的腐蚀照片,并计算出了蚀坑密度(EPD)约为104～105/m2数量级.结果表明生长晶体的质量较好.     

电子束蒸发法制备CdS多晶薄膜及其结构和光学性质

采用电子束蒸发法在玻璃衬底上制备了具有较高结晶度和优异透光性能的CdS多晶薄膜,对制备样品的结构和光学性质进行了表征。结果表明,制备薄膜属于六方相多晶结构,沿（002）晶向择优取向生长。此外,随着衬底温度的升高,样品结晶质量先提高后降低,与薄膜厚度变化有关。紫外-可见透过谱显示,随着衬底温度的升高,薄膜的光吸收边趋于陡直,但光学带隙呈现波动变化,分布在2.389-2.448 eV之间。对样品进行光致发光谱测试表明,CdS薄膜发光锋展宽严重,仅在1.60 eV附近有一个微弱的红光发射。论文对上述实验结果进行了分析和讨论。     

γ辐射对阻燃材料性能的影响

对核电站广泛使用的电缆防火涂料和有机防火堵料进行了耐γ辐射的研究。结果表明：1000kGy以上的γ辐射能严重恶化电缆防火涂料的抗弯性、耐湿热性、耐冷热循环性：500kGy以上的γ辐射对有机防火堵料的耐火性和腐蚀性都有很大影响。     

电子束蒸发制备PbI_2薄膜及其性能表征

采用电子束蒸发工艺在普通玻璃衬底上制备了PbI_2多晶薄膜,研究了不同衬底温度对薄膜结构、表面形貌及紫外-可见光谱的影响.XRD结构表征显示,不同衬底温度下沉积的PbI_2薄膜均属六方结构,低温下呈现(002)方向的c轴择优生长,但随着衬底温度的升高,择优生长弱化;SEM形貌分析结果表明,PbI_2薄膜的晶粒尺寸随着衬底温度的升高而增大,同时晶粒间应力造成的突起减少,薄膜表面致密度和平整度提高;UV光谱测试结果表明,不同衬底温度下制备PbI_2薄膜透过光谱的吸收限均在515nm附近,且呈现陡直的吸收边.计算发现,薄膜禁带宽度约为2.42 eV,随着衬底温度升高而略微增大,显示结晶质量提高.

Abstract：

Polycrystalline lead iodide (PbI_2) thin films were deposited on glass substrates by electron beam evaporation method.The influence of different substrate temperatures on the structure,surface morphology and optical transmittance of the films was studied.XRD analysis shows the PbI_2 films deposited at different temperatures possess hexagonal structure,with a preferred growth orientation of (002) at low temperature,but this preferred growth characteristic vanishes when the substrate temperature increases.SEM micrograph reveals the grain size of PbI_2 thin films increases with the rising substrate temperature,meanwhile,the surface bulges resulted from the strain between grains decrease,making the surface of the films more compact and uniform.UV transmittance shows the steep absorption edge is at 515 nm for all samples grown under different substrate temperatures and the corresponding band gap is about 2.42 eV.     

Photoconductive properties of lead iodide films prepared by electron beam evaporation

Lead iodide (PbI2) films have been prepared by electron beam evaporation technique, and their photoconductive response to visible light was investigated under different deposition and illumination conditions. It is found that the films’ photoconductive response speed increases and the relative sensitivity decreases with the increase of substrate temperature due to the opposite requests for photo-carrier lifetime. Further, appropriately increasing the film’s thickness and rising substrate temperature simultaneously can effectively balance the opposite demands. Under the optimized conditions of substrate temperature of 200℃, source-substrate distance of 30cm and deposition time of 10min, the prepared films exhibit best response properties. In addition, the response to illumination with different wavelengths was also measured, revealing that the decline of response performance with increasing wavelength is due to lower photon energy of incident light.     

GTG起爆药性能研究

文章介绍了一种以碳酰肼为配体的配合物起爆药ＧＴＧ,描述了ＧＴＧ起爆药的基础性能和使用性能。该起爆药机械感度适中,对热作用和静电作用钝感,使用安全,具有良好的应用和发展前景。     

CdS多晶薄膜的制备及性质研究

分别采用近空间升华法和电子束蒸发法在透明导电玻璃和普通载玻片上制备了硫化镉(CdS)多晶薄膜.对制备样品的表征结果表明:(1)两种方法制备样品都沿(002)晶向择优生长,属于六方相多晶结构,但择优取向度不同;(2)CdS薄膜表面连续而致密,粒径均匀,但两种工艺制备样品的S:Cd原子比有较大差异;(3)CdS薄膜的光能隙在2.39～2.44eV之间,电子束蒸发制备样品光能隙稍小.分析认为,两种方法制备样品的上述差异可能与衬底温度、沉积时间及成膜机制的不同相关.     

吸血蝙蝠纤溶酶原激活剂α2的原核表达及抗体制备

利用人工合成的吸血蝙蝠唾液纤溶酶原激活剂α2(DSPAα2)基因,研究了其在细菌中的表达及表达产物的纯化和抗体制备.首先人工合成DSPAα2基因,并构建原核表达载体转化大肠杆菌.经IPTG诱导后,DSPAα2在细菌中得到了高效表达.SDS-PAGE结果显示,以包涵体的形式存在的DSPAα2重组蛋白占到细菌总蛋白的32%.包涵体裂解后经亲合层析柱纯化,100mL菌液中能得到2.2mg纯的重组蛋白.用纯化的DSPAα2分别免疫大鼠和小鼠,经ELISA检测,获得了效价达到1∶12800以上的高质量的抗血清.Western blot结果显示抗体能与DSPAα2特异性地结合.     

Structural and optical properties of polycrystalline CdS thin films deposited by electron beam evaporation

Highly crystalline and transparent cadmium sulphide(CdS) films were deposited on glass substrate by electron beam evaporation technique.The structural and optical properties of the films were investigated.The X-ray diffraction analysis revealed that the CdS films have a hexagonal structure and exhibit preferred orientation along the(002) plane.Meanwhile,the crystalline quality of samples increased first and then decreased as the substrate temperature improved,which is attributed to the variation in film thickness.UV-vis spectra of CdS films indicate that the absorption edge becomes steeper and the band gap present fluctuation changes in the range of 2.389-2.448 eV as the substrate temperature increased.The photoluminescence peak of the CdS films was found to be broadened seriously and there only emerges a red emission band at 1.60 eV.The above results were analyzed and discussed.     

利用多晶硅副产物制备氯化钡的研究

随着中国多晶硅产业的发展,多晶硅副产物的环境污染问题日益突出,将多晶硅副产物无害化和资源化迫在眉捷.研究了利用多晶硅副产物制备氯化钡的影响因素,得到优化工艺条件.实验结果表明:利用多晶硅副产物制备氯化钡是可行的;该方法有助于解决多晶硅副产物的环境污染问题,可大幅度降低多晶硅的生产成本,极大地提高企业的经济效益,对发展中国多晶硅和太阳能产业具有十分重要的意义.