Effect of electrode materials and annealing on metal-semiconductor contact of Ga2O3 with metal

Gallium oxide(Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy(XPS) and scanning electron microscope(SEM). Ti, Pt, Ni and AZO were deposited on the Ga2O3 thin films as electrodes. This paper mainly studies the metal-semiconductor contact formed by these four materials on the films and the influence of annealing at 500℃ on the metal-semiconductor contact. The I-V characteristics show a good linear relationship, which indicates ohmic contact between Ga2O3 and other electrodes.     

用于等离子体射流装置的高压变频脉冲源研究

为研究某种等离子体射流装置在常温常压空气中的放电特性,设计了一种可输出准正弦波电压幅度最高为20 kV、重复工作频率1 Hz～100 kHz可调,功率约为5 kW的等离子体高压变频脉冲源.设计上采用金属-氧化物半导体场效应晶体管(MOSFET)构建全桥拓扑电路,利用开关电源软开关技术原理,将初级能量转移到全桥式串联谐振逆变器上,通过控制芯片施加驱动脉冲信号,经高频脉冲变压器变换后输出高幅度脉冲电压.在间歇或连续工作模式下,该脉冲源输出的高压准正弦波脉冲信号,被加载至等离子体射流装置上,该装置经高压脉冲作用下击穿放电后产生等离子体射流.通过实验结果验证了所采用的设计原理及方法的可行性,给出了不同工作频率条件下得到的实验结果.     

Ⅲ-Ⅴ族氮化物同 AlGaAs/GaAs异质结场效应晶体管迁移率比较

依据测试得到的低源漏偏压下的AlGaAs/GaAs、AlGaN/AlN/GaN、In0.18Al0.82N/AlN/GaN异质结场效应晶体管（HFETs）的电容-电压曲线和电流-电压特性曲线,计算得到了器件的二维电子气（2DEG）电子迁移率。我们发现Ⅲ-Ⅴ氮化物HFETs器件同AlGaAs/GaAs HFETs器件的2DEG电子迁移率随栅偏压的变化趋势有很大不同。在Ⅲ-Ⅴ氮化物HFETs器件中,2DEG电子迁移率随栅偏压的变化趋势与栅长同源漏间距的比值有很大关系,但是栅长同源漏间距的比值对AlGaAs/GaAs HFETs器件的2DEG电子迁移率随栅偏压的变化趋势没有影响。这是因为Ⅲ-Ⅴ氮化物HFETs器件中存在极化梯度库仑场散射的缘故。     

高储能密度脉冲电容器及固态脉冲形成线试验研究

基于玻璃-陶瓷材料PbO-SrO-Na_2O-Nb_2O_5-SiO_2(PSNNS)制作了脉冲电容器和固态脉冲形成线,其脉冲电容器在工作电压30 kV、放电电流2 kA、重复频率1 kHz下的短路放电寿命大于100万次,储能密度达到0.85 k J/L;制作的满银电极的固态脉冲形成线具有良好的矩形脉冲输出,输出电压脉冲半高宽为45ns。     

基于多种检测手段的高压电缆头绝缘放电诊断分析

高压电缆头制作由于结构封闭、部件复杂以及电场均匀度要求高,一直是一个难题。在利用红外精确测温、超声波和高频电流局放检测法的基础上,创新性地引入了X射线吸收衬度成像技术对电力电缆头进行无损检测。通过多种检测手段综合诊断及解体论证,对一起35 kV单芯高压电力电缆头绝缘放电案例进行了详细分析。分析结果表明：X射线吸收衬度成像技术能够有效辅助查找高压电缆头在制作或使用中老化产生的孔洞、裂缝等缺陷;多种检测方式相互验证,可以提高缺陷定性分析的准确率。文中率先将X射线吸收衬度成像技术应用于工程现场,实现通过图形查找高压电缆头故障缺陷,提高电力电缆故障诊断直观性和可靠性。     

边欧姆工艺对AlN/GaN 异质结场效应晶体管极化梯度库仑场散射的影响

Using the measured capacitance–voltage and current–voltage characteristics of the rectangular Al N/Ga N heterostructure field-effect transistors(HFETs) with the side-Ohmic contacts, it was found that the polarization Coulomb field scattering in the Al N/Ga N HFETs was greatly weakened after the side-Ohmic contact processing, however, it still could not be ignored. It was also found that, with side-Ohmic contacts, the polarization Coulomb field scattering was much stronger in Al N/Ga N HFETs than in Al Ga N/Al N/Ga N and In0:17Al0:83N/Al N/Ga N HFETs, which was attributed to the extremely thinner barrier layer and the stronger polarization of the Al N/Ga N heterostructure.     

沟道电场分布对AlN/GaN HFETs极化库仑场散射的影响

Based on the measured capacitance–voltage(C–V) curves and current–voltage(I–V) curves for the prepared differently-sized Al N/Ga N heterostructure field-effect transistors(HFETs), the I–V characteristics of the Al N/Ga N HFETs were simulated using the quasi-two-dimensional(quasi-2D) model. By analyzing the variation in the electron mobility for the two-dimensional electron gas(2DEG) with the channel electric field, it is found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field(PCF) scattering. The 2DEG electron mobility difference is mostly caused by the PCF scattering which can reach up to 899.6 cm2/(V s)(sample a), 1307.4 cm2/(V s)(sample b),1561.7 cm2/(V s)(sample c) and 678.1 cm2/(V s)(sample d), respectively. When the 2DEG sheet density is modulated by the drain–source bias, the electron mobility for samples a, b and c appear to peak with the variation of the 2DEG sheet density, but for sample d, no peak appears and the electron mobility rises with the increase in the2 DEG sheet density.     

Comparison for the carrier mobility between the III-V nitrides and AIGaAs/GaAs heterostructure field-effect transistors

Using the measured capacitance-voltage curves ofNi/Au Schottky contacts with different areas and the current-voltage characteristics for the A1GaAs/GaAs, A1GaN/A1N/GaN and InoAsA10.szN/A1N/GaN heterostructure field-effect transistors （HFETs） at low drain-source voltage, the two-dimensional electron gas （2DEG） electron mobility for the prepared HFETs was calculated and analyzed. It was found that there is an obvious difference for the variation trend of the mobility curves between the Ⅲ-V nitride HFETs and the A1GaAs/GaAs HFETs. In the III-V nitride HFETs, the variation trend for the curves of the 2DEG electron mobility with the gate bias is closely related to the ratio of the gate length to the drainto-source distance. While the ratio of the gate length to the drainto-source distance has no effect on the variation trend for the curves of the 2DEG electron mobility with the gate bias in the A1GaAs/GaAs HFETs. The reason is attributed to the polarization Coulomb field scattering in the Ⅲ-V nitride HFETs.