A highly transparent and thermally stable copolymer of 1‐adamantyl methacrylate and styrene

Thermal and optical properties of copolymers of 1‐adamantyl methacrylate (AdMA) and styrene (St) prepared by free radical polymerization in the bulk are investigated. The copolymer forms an azeotrope when the composition is AdMA/St = 55/45 mol%. The glass transition temperature and decomposition temperature of the azeotropic copolymer are 170 and ca 340 °C, respectively. The refractive index increases nonlinearly with St content from 1.522 to 1.591. The light scattering loss at 633 nm is 28.1 dB km^?1, which is less than half of that of polystyrene. The total optical loss including molecular vibrational absorption, which is evaluated using a copolymer‐based optical fiber, is 292–645 dB km^?1 at 500–700 nm. These values correspond to transmittances of 86–93% for a 1 m optical path length. © 2014 Society of Chemical Industry     

Development of a novel image intensifier of an amplifiedmetal-oxide semiconductor imager overlaid with electron-bombardedamorphous silicon

We developed a novel image intensifier (II) of an amplified metal-oxide-semiconductor (MOS) imager (AMI) overlaid with electron-bombarded (EB) amorphous silicon (a-Si). The electron bombardment gain (EB gain) was 1500 at an accelerating voltage of 10 kV. Since the multiplication process was free from a phosphorescent screen and a coupling fiber plate as in the conventional II, the resolution was high and the picture quality was good and free from granularity noises, white spots, lag and sticking. As for fatigue of X-ray irradiation, the contrasts of a vertical stripe (Smear) are not detectable and damaged areas in AMI are weak whereas both of those in charge-coupled devices (CCDs) are strong     

Measurement of Thermal Diffusivity at Low Temperatures Using an Optical Reflectivity Technique

An experimental arrangement has been developed for measuring the transient temperature responses and the thermal diffusivities of foil materials in the range of 10 to 300K by using the optical reflectivity technique. The cryogenic system with optical windows is designed to provide temperatures from 10 to 300 K. The front surface of a foil specimen is heated by a pulsed Nd:YAG laser. In situ measurement of the reflectivity of a continuous-wave He–Ne laser at the rear surface is conducted on the microsecond time scale. Using the temperature dependence of reflectivity, the transient temperature response is deduced. The thermal diffusivity is obtained by fitting Parker's formulae to the experimental data on temperature rise. Stainless-steel foils are chosen as samples and are studied in the region from 10 to 300 K. The accuracy is examined by comparing the present results with the theoretical temperature responses and thermal diffusivity data from the literature. Good agreement is observed.     

Stability analysis of continuous-time periodic systems via theharmonic analysis

Asymptotic stability of finite-dimensional linear continuous-time periodic (FDLCP) systems is studied by harmonic analysis. It is first shown that stability can be examined with what we call the harmonic Lyapunov equation. Another necessary and sufficient stability criterion is developed via this generalized Lyapunov equation, which reduces the stability test into that of an approximate FDLCP model whose transition matrix can be determined explicitly. By extending the Gerschgorin theorem to linear operators on the linear space l₂, yet another disc-group criterion is derived, which is only sufficient. Stability of the lossy Mathieu equation is analyzed as a numerical example to illustrate the results     

A general framework for debugging

The state of the art of debugging is examined. A debugged process model that serves as the basis of a general debugging framework is described. The relationship of the model to traditional debugging processes and support tools is discussed. A minimal set of requirements for a general debugging framework is described in terms of both the theory behind debugging methodologies and the support tools. An execution monitor, Eden, that serves as a debugging tool within this general framework is described     

Structural and electronic properties of CuInSe2

Structural investigation on monocrystalline CuInSe₂ samples has been made. From the single crystal results, the space group of CuInSe₂ was confirmed to be Iˉ42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.     

Fast microwave detection system for coherent synchrotron radiation study at KEK: Accelerator test facility

A fast room temperature microwave detection system based on the Schottky Barrier-diode detector was created at the KEK ATF (Accelerator Test Facility). It was tested using Coherent Synchrotron Radiation (CSR) generated by the 1.28 GeV electron beam in the damping ring. The speed performance of the detection system was checked by observing the CSR from a multi-bunch (2.8 ns bunch separation time) beam. The theoretical estimations of CSR power yield from an edge of bending magnet as well as new injection tuning method are presented. A very high sensitivity of CSR power yield to the longitudinal electron distribution in a bunch is discussed.     

Probing stress effects in HfO2 gate stacks with time dependent measurements

Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO₂ dielectric with various interfacial layers were studied with time dependent sensing measurements: DC I–V, pulse I–V, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (V_t) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on V_t.     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.