Hopping and optical absorption of electrons in nano-porous crystal 12CaO·7Al2O3

Recently it has been discovered that a nano-porous main group oxide 12CaO·7Al₂O₃ (C12A7) can be converted from a wide-gap insulator to a good transparent conductor. Using ab initio modelling we explain good conductivity of this material by very small barriers for hopping of localised electrons between neighbouring positive cages. We show that optical absorption of C12A7 in infrared region and at energies higher than 2.7 eV is due to inter-cage and intra-cage electron transitions, respectively. The proposed mechanisms can be useful in further search for conducting transparent media.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

Cyclic GMP inhibits and shifts the activation curve of the delayed-rectifier (I[K1]) of type I mammalian vestibular hair cells

NITRIC oxide (NO) plays a role in the modulation of the predominant potassium current of type I vestibular hair cells, a low-voltage activated current called I(K1). Since many effects of NO are mediated via cGMP, patch-clamp recordings were made to evaluate the effects of cGMP on I(K1). In whole-cell recordings 1 mM cGMP shifted Vhalf of I(K1) by 15.0 +/- 2.4 mV (n = 6) to more positive. In cell-attached 'multichannel' recordings 1 mM 8-bromo-cGMP caused a reversible shift of Vhalf by 13.8 +/- 2.6 mV (n = 12) and in single channel recordings in the cell-attached configuration the open probability was reduced at -60 mV from 0.39 +/- 0.14 to 0.08 +/- 0.01. cGMP had no effect on excised inside-out patches, indicating that an intact cytosolic milieu with functioning phosphorylation cascades is necessary. cGMP seems to be an important second messenger which reduces the potassium conductance of vestibular hair cells.     

Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films

Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of ΔV/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200°C after CN treatment induced the further reduction of the ΔV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated.     

Effect of Microstructural Control on Thermoelectric Properties of Hot-Pressed Aluminum-Doped Zinc Oxide

The thermal conductivity of polycrystalline Al-doped ZnO was controlled through the fabrication of nanostructured polycrystalline materials, by hot-pressing nanosized Zn_{1– x} Al _x O ( x = 0.01, 0.02) particles, which were synthesized by a coprecipitation and spray-drying method. This process resulted in an improved thermoelectric power factor because of the nanosized Zn_0.99Al_0.01O particles of the polycrystalline products. The thermal conductivity also was decreased as a result of the formation of nanocrystalline Zn_0.99Al_0.01O.     

Built-in Nanostructures in Transparent Oxides for Novel Photonic and Electronic Functions Materials

We review distinct photonic/electronic properties originating from built-in nanostructures in transparent oxide-based materials, emphasizing potential of nanostructures hidden in crystal structure. Materials focused on are oxychalcogenides LaCuOCh (Ch = chalcogen ion) and homologous oxides InGaO₃(ZnO)_m(m = integer) having naturally formed multi-quantum well structures and 12CaO· 7Al₂O₃ (C12A7) with a unique nanoporous structure. Novel functions and devices arising from the built-in nanostructure are: (1) modulation doping of positive holes and room-temperature stable exciton in LaCuOCh, (2) high-performance transparent field-effect transistor fabricated in InGaO₃(ZnO)₅ epitaxial thin films, and (3) conversion of insulator to persistent electronic conductor by carrier doping in 12CaO·7Al₂O₃ (C12A7).