排序方式: 共有66条查询结果,搜索用时 15 毫秒
1.
NiCuZn铁氧体和银内电极的共烧行为 总被引:2,自引:0,他引:2
NiCuZn铁氧体正作为磁介质广泛地应用于低烧多层片式电感,因此有必要对其与银内电极的共烧行为进行研究。该文主要介绍NiCuZn铁氧体/银内电极多层复合体共烧过程中的烧结收缩、界面反应、扩散对介质性能的影响。尖晶石结构中存在相当数量的空位,这为银离子提供了一定的溶解度,因此在共烧过程中银对铁氧体的相组成影响较小。银对铁氧体性能的影响体现在两个方面。一方面是由于银具有相对低的烧结温度,从而在烧结过程中起到助烧剂的作用,促进致密化过程,提高烧结体的密度和磁导率;另一方面,银促使铁氧体中的铜在晶界处析出,导致晶界处应力,使磁导率降低,晶粒生长也被一定程度地抑制。 相似文献
2.
3.
Low-temperature sintering and properties of LTCC (low temperature co-fired ceramics) materials based on CaO-BaO-Al2O3-B2O3-SiO2 glass and various fillers such as Al2O3, silica glass, christobalite, AlN, ZrO2, MgO-SiO2, TiO2 were investigated. The results show that densification, crystallization, microstructures and dielectric properties of the composites are found to strongly depend on the type of filler. The densification process of glass/ceramic composites with various fillers is mainly from 600 ℃ to 925 ℃, and the initial compacting temperature of samples is 600 ℃. The initial rapid densification of samples starts at its glass softening temperature. LTCC compositions containing Al2O3, silica glass, AlN and MgO-SiO2 fillers start to have the crystallization peaks at 890, 903, 869 and 844 ℃, respectively. The crystallization peaks are believed as correlated to the crystallization of CaAl2SiO8, β-SiO2, Ca2Al2SiO7 and β-SiO2. The composite ceramic with Al2O3, silica glass and TiO2 ceramic have a better dense structure and better smooth fracture surface. Sample for Al2O3 has the lowest dielectric loss tanδ value of 0.00091, whereas the sample for MgO.SiO, has the highest dielectric loss tanδ value of 0.02576. The sample for TiO2 has the highest dielectric constant value of 14.46, whereas the sample for AIN has the lowest dielectric constant value of 4.61. 相似文献
4.
对低温烧结Zn(Nb0.9V0.1)2O6微波介质陶瓷进行了研究,讨论了V离子取代Nb离子进入铌酸锌晶格后对材料结构与微波性能的影响以及V5+取代后材料结构与性能之间的关系.实验结果表明少量V5+取代Nb5+后材料的烧结温度可从未取代时的1150℃显著降至取代后的950℃;V离子进入铌酸锌晶格,材料晶体结构仍为铌铁矿结构;低温烧结后ZnNb0.9(V0.1)2O6微波介质材料具有圆柱状微结构和部分玻璃相物质;Zn(Nb0.9V0.1)2O6微波介质材料950℃烧结后具有最佳微波介电性能(介电常数为25,Q×f值为29 500GHz,谐振频率温度系数为-44×10-6/℃). 相似文献
5.
6.
7.
8.
9.
10.