Effects of ZnO buffer layer on the optoelectronic performances of GZO films

Gallium-doped zinc oxide (ZnO:Ga=97:3 wt%, GZO) transparent conducting films have been deposited on glass substrates (Corning 1737F), with and without ZnO buffer layers by radio-frequency (r.f.) magnetron sputtering. The effect of ZnO buffer layer deposition parameters on electrical, structural, morphological and optical properties of GZO films (GZO/ZnO/glass) was investigated. The optimization of coating process parameters (r.f. power, sputtering pressure, thickness, annealing) on ZnO buffer layer with multiple qualities based on the orthogonal array has been studied. The electrical resistivity and the average transmittance of the GZO/ZnO/glass films were improved by annealing in vacuum ambient of the ZnO buffer layer. Findings based on the grey relational analysis show that the lowest electrical resistivity of GZO/ZnO/glass films to be about 9.45×10⁻⁴ Ω cm, and visible range transmittance about 85%.     

Energy loss and straggling of Li ions in the polymer foils

Energy loss and straggling of 0.18-0.78 MeV/amu ⁷Li ions in polycarbonate, polyethylene terephthalate and polypropylene foils were measured by means of a transmission technique with a half-covered detector. The stopping force measurements are compared with the SRIM 2006 calculation and the database of the ICRU report 73. The measured energy loss straggling are in satisfactory agreement with the results yielded using the empirical formula at the higher energy region. The obtained data also demonstrated that the validity of Bragg’s rule applied to stopping force and energy loss straggling for ⁷Li ions in polymer foils.     

条状马氏体形态对钢力学性质的影响

总结了有关条状马氏体形态对钢力学性质（主要为强度）影响的文献。由于马氏体束比领域小很多,且也具有高角度位向差界面,一般束宽为决定条状马氏体强韧性的主要因素。但当马氏体条宽在几十nm级时,条宽将对钢的强度和韧性作更大贡献。     

Compact and vertically-aligned ZnO nanorod thin films by the low-temperature solution method

Highly c-axis-oriented ZnO nanorod thin films were obtained on silica glass substrates by a simple solution-growth technique. The most compact and vertically-aligned ZnO nanorod thin film with the thickness of ∼ 800 nm and average hexagonal grain size of ∼ 200 nm exhibits the average visible transmittance 85%, refractive index 1.74, packing density 0.84, and energy band gap 3.31 eV, and it was fabricated under the optimum parameters: 0.05 M, 75 °C, 6 h, multiple-stepwise, and ZnO seed layer with an average grain size of ∼ 20 nm. The photoluminescence spectrum indicates that the densest ZnO nanorod thin film possesses lots of oxygen vacancies and interstitials. As we demonstrate here, the solution-growth technique was used to produce high-quality and dense ZnO nanorod thin films, and is an easily controlled, low-temperature, low-cost, and large-scale process for the fabrication of optical-grade thin films.     

Laser, buffer layer and CoCrPtOx-assisted low temperature fabrication process of a small-sized-CNT pattern by MPCVD

For improving compatibility with IC processes, this work presents a low temperature process (< 400 °C) to fabricate a small-sized-carbon nanotube (CNT) (< 6 graphene layers) pattern by buffer layer (AlN) and CoCrPtO_x catalyst precursor-assisted microwave plasma chemical vapor deposition (MPCVD). Without high temperature heating on the whole specimen, the low temperature process mainly results from selective local activation laser heating (≧ 600 °C) to form the catalyst nanostructures, which are beneficial to low temperature H-plasma treatment to form catalyst nanoparticles for CNT growth. The functions of the buffer layer and the catalyst precursor are to help the heat dissipation and the small-sized CNT formation.     

Effects of sputtering pressure and Al buffer layer thickness on properties of AZO films grown by rf magnetron sputtering

Transparent and conductive Al-doped (2 wt.%) zinc oxide (AZO) films were deposited on inexpensive soda-lime glass substrates by using rf magnetron sputtering at room temperature. This study analyzed the effects of argon sputtering pressure, which varied in the range from 0.46 to 2.0 Pa, on the morphological, electrical and optical properties of AZO films. The only (0 0 2) diffraction peak of the film were observed at 2θ～34.45°, exhibiting that the AZO films had hexagonal ZnO wurtzite structure, and a preferred orientation with the c-axis perpendicular to the substrate. By applying a very thin aluminum buffer layer with the thickness of 2 nm, findings show that the electrical resistivity was 9.46 × 10⁻⁴ Ω-cm, and the average optical transmittance in the visible part of the spectra was approximately 81%. Furthermore, as for 10 nm thick buffer layer, the electrical resistivity was lower, but the transmittance was decreased.     

A fully-coupled fluid-structure interaction simulation of cerebral aneurysms

This paper presents a computational vascular fluid-structure interaction (FSI) methodology and its application to patient-specific aneurysm models of the middle cerebral artery bifurcation. A fully coupled fluid-structural simulation approach is reviewed, and main aspects of mesh generation in support of patient-specific vascular FSI analyses are presented. Quantities of hemodynamic interest such as wall shear stress and wall tension are studied to examine the relevance of FSI modeling as compared to the rigid arterial wall assumption. We demonstrate the importance of including the flexible wall modeling in vascular blood flow simulations by performing a comparison study that involves four patient-specific models of cerebral aneurysms varying in shape and size.     

Structure and mechanical properties of Ti–5Cr based alloy with Mo addition

The effects of molybdenum (Mo) on the structure and mechanical properties of a Ti–5Cr-based alloy were studied with an emphasis on improving its strength/modulus ratio. Commercially pure titanium (c.p. Ti) was used as a control. As-cast Ti–5Cr and a series of Ti–5Cr–xMo (x = 1, 3, 5, 7, 9 and 11 wt.%) alloys were prepared by using a commercial arc-melting vacuum-pressure casting system, and investigated with X-ray diffraction (XRD) for phase analysis. Three-point bending tests were performed to evaluate the mechanical properties of all specimens and their fractured surfaces were observed by using scanning electron microscopy (SEM). The experimental results indicated that Ti–5Cr–7Mo, Ti–5Cr–9Mo and Ti–5Cr–11Mo alloys exhibited ductile properties, and the β-phase Ti–5Cr–9Mo alloy exhibited the lowest bending modulus. However, the Ti–5Cr–3Mo and Ti–5Cr–5Mo alloys had much higher bending moduli due to the formation of the ω phase during quenching. It is noteworthy that the Ti–5Cr–9Mo alloy exhibited the highest bending strength/modulus ratios at 26.0, which is significantly higher than those of c.p. Ti (8.5) and Ti–5Cr (13.3). Furthermore, the elastically recoverable angle of the Ti–5Cr–9Mo alloy (30°) was greater than that of c.p. Ti (2.7°). The reasonably high strength (or high strength/modulus ratio) β-phase Ti–5Cr–9Mo alloy exhibited a low modulus, ductile property, and excellent elastic recovery capability, which qualifies it as a novel implant materials.     

Effect of rapid thermal annealing treatment on the field-emission characteristics of nanocrystalline diamonds grown on various metal/silicon substrates

In this study, nanocrystalline diamond (NCD) films were deposited on various metal/silicon substrates using a microwave plasma chemical vapor deposition system. Metal layers used are chromium, titanium, aluminum and were used as the electron source for field emitters. These NCD/metal/silicon structures were subsequently annealed at 500 °C in a rapid thermal annealing (RTA) furnace. After RTA treatment, the surface of NCD films becomes flat and the grain boundaries can no longer be clearly seen. The intensity of graphitic peak is substantially decreased and the sp³ content of NCD films is increased. The chemical composition of NCD film remains unchanged after RTA treatment, but the sp³/sp² ratio in C 1s has been increased. It is found that the field-emission characteristics of diamond emitter not only can be effectively controlled by the metal used in the metal/NCD/Si structure, but also can be further enhanced by the improved microstructure of the NCD film obtained after RTA treatment.