On the minimum pseudo-codewords of LDPC codes

In this letter, we study the minimum pseudo-codewords of low-density parity-check (LDPC) codes under linear programming (LP) decoding. We show that a lower bound of Chaichanavong and Siegel on the pseudo-weight of a pseudo-codeword is tight if and only if this pseudo-codeword is a real multiple of a codeword. Using this result we further show that for some LDPC codes, e.g., Euclidean plane and projective plane LDPC codes, there are no other minimum pseudo-codewords except the real multiples of minimum codewords.     

On the stopping distance of finite geometry LDPC codes

In this letter, the stopping sets and stopping distance of finite geometry LDPC (FG-LDPC) codes are studied. It is known that FG-LDPC codes are majority-logic decodable and a lower bound on the minimum distance can be thus obtained. It is shown in this letter that this lower bound on the minimum distance of FG-LDPC codes is also a lower bound on the stopping distance of FG-LDPC codes, which implies that FG-LDPC codes have considerably large stopping distance. This may explain in one respect why some FG-LDPC codes perform well with iterative decoding in spite of having many cycles of length 4 in their Tanner graphs.     

Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

A comprehensive study of emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistors (HBTs) has been undertaken. It is shown that the recombination rate and electron densities are drastically increased near the exposed base surface between the base contact and the emitter ledge. In contrast, the corresponding hole densities are decreased. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of the emitter ledge is a crucial issue and should be carefully considered. It is shown that, from simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is 100-200 Aring     

A Novel Pt/In0.52Al0.48As Schottky Diode-Type Hydrogen Sensor

On the basis of a Pt/In_0.52Al_0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In_0.52Al_0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H₂/air gas and V_R=-0.5 V at 30 degC), large current variation of 310 muA (under the 1% H₂/air gas and V_R=-5 V at 200 degC), widespread reverse-voltage regime (0~-5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Omega, respectively (under the 1% H₂/air gas at 30 degC). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H₂/air and 30 degC-250 degC, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications     

InxGa1-xN合金薄膜In的表面分凝现象

用MOCVD方法在α-Al2O3(0001)衬底上外延生长了InxGa1-xN合金薄膜.测量结果显示:所制备的InxGa1-xN样品中In的组分随外延生长温度而改变,生长温度由620℃升高到740℃,In的组分由0.72降低到0.27.这是由于衬底温度越高,In进入InxGa1-xN薄膜而成键的效率越低.样品的X射线衍射谱和X射线光电子能谱均显示:在生长温度为620℃和690℃时所生长的InxGa1-xN样品中均存在明显的In的表面分凝现象;而生长温度升至740℃时所得到的InxGa1-xN样品中,In的表面分凝现象得到了有效抑制.保持生长温度不变而将反应气体的Ⅴ/Ⅲ比从14000增加到38000,In的表面分凝现象也明显减弱.由此可以认为,较高的生长温度使得In原子的表面迁移能力增强,In原子从InxGa1-xN表面解吸附的几率增大,而较高的Ⅴ/Ⅲ比则能增加N与In成键几率,从而有利于抑制In的表面分凝.     

反应堆系统数字化实时仿真的高效实现

根据实验反应堆的物理特性，建立堆芯动态模型，探讨多种实时仿真算法的实现途径。研究提出了进行数字化实时仿真的一种高效实现方法。为配合功率调节系统半实物仿真试验而实现了一座实验反应堆在Windows平台下的实时仿真系统。      

引黄工程计算机监控系统中的数据通信规约

介绍了引黄工程WAN结构和配置,提出了引黄工程计算机监控系统中数据通信的分层分布式结构模式,其通信协议采用TCP/IP协议,传输层的数据格式为DNP3.0,现地层采用现场总线和RS LINK通信协议。这些协议的开放性以及现地协议的实时性,既满足了引黄工程后期建设对计算机监控系统开放和可扩充的要求,又实现了全线自动调度调节以及现地实时控制的功能。     

用密度泛函理论研究三价铁掺杂锐钛矿二氧化钛

采用密度泛函理论(DFT)的全势PLAPW方法,通过构造超晶胞模型,按GGA-PW91水平计算,研究Fe(Ⅲ)掺杂锐钛矿TiO_2的电子态密度、化学键性质。结果表明,Fe(Ⅲ)掺杂TiO_2后,Ti-O键长及重叠布居数发生了变化；在费米能级附近,Fe (Ⅲ)周围的O2p轨道发生分裂,并与Fe(Ⅲ)的3d轨道有较明显的重叠,导致Fe(Ⅲ)/TiO_2晶体禁带变窄。     

cdma2000 1x EV-DO下行无线链路预算

1x EV-DO是cdma2000 1x系统的演进,在cdma2000 1x的基础上能够提供高速移动数据传输业务.本文简要介绍了1x EV-DO的技术特点和前向链路的时隙结构,并对前向链路在不同传输速率条件下所能达到的覆盖范围进行了估算,结合估算结果对1x EV-DO系统进行实例分析,分析结果说明1x EV-DO系统很难提供3G标准所规定的静止环境2048kbit/s的无线接入速率,只有当用户数有限且传输信道质量优良的条件下,才有可能提供大约600kbit/s的最高无线接入速率.     

三轴光电跟踪系统的实时引导

三轴光电跟踪系统是地平式和X-Y式光电跟踪系统的有机组合,可以全方位跟踪空间运动目标,跟踪系统测量值与空间位置的多对一特性决定了跟踪策略的多样性和系统引导的复杂性,跟踪过程中对系统进行实时引导可以提高系统的跟踪精度及其可靠性。各种跟踪策略下三轴光电跟踪系统的引导过程包括:地平式的引导、X-Y式的引导、具视轴偏角的地平式引导、三轴光电跟踪系统的引导等。通过理论分析,给出了各种情况下的引导方法。