SOI技术及其最新进展

介绍了近年来实现三维集成电路中的关键技术--- Ｓ Ｏ Ｉ 技术的各类方法,重点讨论了各种 Ｓ Ｏ Ｉ技术的最新进展．     

SOI——二十一世纪的微电子技术

与体硅材料和器件比较,ＳＯＩ具有许多独特的优越性,例如高开关速度、高密度、抗辐照、无闩销效应等,因而被称为二十一世纪的微电子技术而引起你们越来越多的关注。ＳＯＩ技术正走向商业应用阶段,特别是应用于高性能、低功耗ＣＭＯＳ电路,抗辐照器件和高温电子器件等。本文综述了ＳＯＩ材料和器件的最新进展。     

TFSOI RESURF器件电势和电场分布的解析研究

在物理模型的基础上,对ＴＦＳＯＩ ＲＥＳＵＲＦ器件的电势和电场分布进行了解析分析,系统研究了漂移区掺杂浓度,漂移区长度,埋层ＳｉＯ２厚度和ＳＯＩ层厚度等结构参数同电势和电场分布的关系,并首次定量分析了在工艺加工过程中必须引入的场ＳｉＯ２界面电荷密度的影响。解析计算结果同ＭＥＤＩＣＩ模拟结果相符。     

扫描电子束在绝缘衬底上生长单晶硅薄膜(SOI)的实验研究

在绝缘衬底上生长单晶硅薄膜,即SOI技术,是近年发展起来研制三维集成电路的一项新技术。本文讨论了利用扫描电子束对淀积在SiO2上的多晶硅薄膜进行改性的实验。采用籽晶液相外延形成单晶硅薄膜。本实验的重点在于摸索电子束的功率密度、扫描速度、衬底的温度和样品结构等因素对形成单晶硅薄膜质量的影响。实验取得了较好的结果,获得了20025m2的单晶区。     

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

The miniaturization of microelectromechanical systems (MEMS) physical sensors is driven by global connectivity needs and is closely linked to emerging digital technologies and the Internet of Things. Strong technical advantages of miniaturization such as improved sensitivity, functionality, and power consumption are accompanied by significant economic benefits due to semiconductor manufacturing. Hence, the trend to produce smaller sensors and their driving force resemble very much those of the miniaturization of integrated circuits (ICs) as described by Moore's law. In this respect, with its IC-, and MEMS-compatibility, and scalability, the silicon nanowire is frequently employed in frontier research as the sensor building block replacing conventional sensors. The integration of the silicon nanowire with MEMS has thus generated a multiscale hybrid architecture, where the silicon nanowire serves as the piezoresistive transducer and MEMS provide an interface with external forces, such as inertial or magnetic. This approach has been reported for almost all physical sensor types over the last decade. These sensors are reviewed here with detailed classification. In each case, associated technological challenges and comparisons with conventional counterparts are provided. Future directions and opportunities are highlighted.     

一种新型2×2 SOI热光开关

设计并制作了一种新型的SOI 2×2马赫-曾德(MZ)热光开关.这种光开关采用了深刻蚀结构的配对多模干涉耦合器,同时,为了保证单模传输和调制,在连接波导和调制臂区域采用了浅刻蚀结构.深刻蚀结构增强了多模干涉耦合器对光场的限制,有利于自映像质量的提高,从而减少了自映像损耗和不均衡度,同时也提高了制作容差.基于强限制配对干涉耦合器的新型热光开关,其插入损耗为-11.0 dB,其中包括光纤-波导耦合损耗-4.3 dB,上升和下降开关时间分别为3.5μs和8.8μs.     

Research on the inducing factors and characteristics of knock combustion in a DI hydrogen internal combustion engine in the process of improving performance and thermal efficiency

Hydrogen energy is gaining greater attention because of the energy crisis and CO2 emissions, and knock combustion has become the main obstacle to improving thermal efficiency and power performance of hydrogen engines, which is an important method of hydrogen energy application. In this paper, the knock characteristic parameters and the factors affecting knock tendency of a 2.0 L DI hydrogen engine are investigated experimentally. The results reveal the variation in knock intensity is not linear with the retarding of SOI, which is related to the cylinder mixture distribution. Furthermore, methods such as increasing injection pressures can be useful in reducing the knock intensity. Equivalence ratio has a greater impact on knock compared with other parameters. The conclusions can be used in the further exploration of the knock combustion mechanism in DI hydrogen engines.