‘Beautiful’ unconventional synthesis and processing technologies of superconductors and some other materials

Abstract

Superconducting materials have contributed significantly to the development of modern materials science and engineering. Specific technological solutions for their synthesis and processing helped in understanding the principles and approaches to the design, fabrication and application of many other materials. In this review, we explore the bidirectional relationship between the general and particular synthesis concepts. The analysis is mostly based on our studies where some unconventional technologies were applied to different superconductors and some other materials. These technologies include spray-frozen freeze-drying, fast pyrolysis, field-assisted sintering (or spark plasma sintering), nanoblasting, processing in high magnetic fields, methods of control of supersaturation and migration during film growth, and mechanical treatments of composite wires. The analysis provides future research directions and some key elements to define the concept of ‘beautiful’ technology in materials science. It also reconfirms the key position and importance of superconductors in the development of new materials and unconventional synthesis approaches.     

The Characteristics of Cu2O Thin Films Deposited Using RF‐Magnetron Sputtering Method with Nitrogen‐Ambient

We investigate the characteristics of Cu₂O thin films deposited through the addition of N₂ gas. The addition of N₂ gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase (6CuO·Cu₂O) appears at a N₂ flow rate of 1 sccm, and a Cu₂O (200) phase is then preferentially grown at a higher feeding amount of N₂. The optical and electrical properties of Cu₂O thin films are improved with a sufficient N₂ flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of 1.5×10^?2 S/cm are obtained. These high‐quality Cu₂O thin films are expected to be applied to Cu₂O‐based heterojunction solar cells and optical functional films.     

Synthesis of graphene together with undesired CuxO nanodots on copper foils by low-pressure chemical vapor deposition

The synthesis of graphene on Cu foils has been carried out using a low-pressure chemical vapor deposition (LPCVD) process. Under certain growth conditions apart from the graphene flakes, undesired Cu_xO nanodots appear. The samples were characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photoemission spectroscopy. On the basis of the results, we investigated the effect of growth parameters such as pressure, methane-to-hydrogen ratio and cooling atmosphere on the growth rate, the composition, especially the cleanliness of graphene by scanning electron microscopy in detail. It is shown that the obtained film is quite sensitive on the preparation conditions and the appearance of Cu_xO nanodots is preventable.     

Structural,linear and third-order nonlinear optical properties of Cu nanocrystal in sodium borosilicate glass

Cu nanocrystals embedded in sodium borosilicate glass of varied Cu contents from 0.5 to 1.5 wt% have been successfully prepared through a sol–gel process. According to the results of X-ray diffraction (XRD) and the energy dispersive X-ray spectrometry (EDS), the metal Cu nanocrystals in cubic crystal system were well distributed inside glass matrix. Fourier Transform Infrared (FTIR) indicated the sodium borosilicate matrix had no major structural change for gels with different Cu contents. The optical absorption peaks due to the surface plasmon resonance of Cu particles were observed in the wavelength range of 550–600 nm. The absorption peak showed a red-shift trend with increasing Cu contents from 0.5 to 1.5 wt%. Transmission electron microscopy (TEM) revealed the existence of spherical Cu nanocrystals in the matrix. The diameter of Cu nanocrystals varied from 1 to 3.5 nm. Furthermore, the third-order nonlinear optical properties were investigated by Z-scan technique at 800 nm. Experimental results indicated the Cu nanocrystals have obvious positive refractive nonlinearities and reverse saturated absorption performance.     

Wettability and interfacial reaction mechanism between Ag–Cu alloy and Si3N4 ceramics in air atmosphere

The wetting behaviour and interfacial reaction mechanism between Ag–Cu alloy fillers (with varying copper contents) and Si₃N₄ ceramics using reactive air brazing at 970 °C were systematically investigated. As the copper content increased, the contact angles of the Ag–Cu filler on the Si₃N₄ ceramics decreased. A violent boiling-like interfacial reaction was observed during the experiment, and mass spectrometry analysis identified the gaseous products as N₂, NO and NO₂. The solid products SiO₂ and Cu–O formed at the interface, and the interfacial reactions improved the wettability of the Ag–Cu filler on the Si₃N₄ ceramics. Owing to buoyancy and the pushing of the gases, the interfacial products floated to the surface of the filler and their distribution increased along with the increasing copper content. Two different microstructures were formed at the interface near the triple line. Thick and thin SiO₂ layers were respectively formed on the triple line interface of the fillers with low (Ag–3Cu/Ag–5Cu) and high (Ag–6.6Cu/Ag–16Cu) copper content. The interfacial bonding zones formed in Ag–5Cu, Ag–6.6Cu, and Ag–16Cu samples indicated that the corresponding Ag–Cu fillers were effectively brazed with the Si₃N₄ ceramics.     

First-principles investigation on stability and electronic structure of Sc-doped θ′/Al interface in Al−Cu alloys

The properties of Sc-doped θ′ (Al₂Cu)/Al interface in Al−Cu alloys were investigated by first-principles calculations. Sc-doped semi-coherent and coherent θ′ (Al₂Cu)/Al interfaces (Sc doped in Al slab (S1 site), Sc doped in θ′ slab (S2 site)) were modeled based on calculated results and reported experiments. Through the analysis of interfacial bonding strength, it is revealed that the doping of Sc at S1 site can significantly decrease the interface energy and increase the work of adhesion. In particular, the doped coherent interface with Sc at S1 site which is occupied by interstitial Cu atoms has very good bonding strength. The electronic structure shows the strong Al—Cu bonds at the interfaces with Sc at S1 site, and the Al—Al bonds at the interfaces with Sc at S2 site are formed. The formation of strong Al—Cu and Al—Al bonds plays an important role in the enhancement of doped interface strength.     

Rochow-Müller反应制备甲基氯硅烷单体工艺的研究进展

Rochow-Müller反应是一种直接合成甲基氯硅烷的方法。由于其原料易得,产物收率高,工艺较易实现,成为有机硅工业单体生产的主流工艺。到目前为止,铜基催化剂仍为Rochow-Müller反应的核心催化剂,催化性能的改善对该工艺的提升具有重大意义。在探索高效催化剂和理解其机理方面已取得相关进展,但由于副产物多,复杂性高,对该反应真实反应路径的追踪仍然较为困难。对Rochow-Müller反应的热力学过程、铜基催化剂及助催化剂的应用、反应机制及动力学过程和工艺条件的影响进行综述讨论。希望这项工作能够准确地反应Rochow-Müller反应催化工艺的最新进展,并可以促进有机硅工业的可持续性发展。