排序方式: 共有114条查询结果,搜索用时 15 毫秒
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以甲基丙烯酸甲酯(MMA)、苯乙烯(St)和丙烯酸丁酯(BA)等为主要单体,引入丙烯酸(AA)、丙烯酸羟基乙酯(HEA)与甲基丙烯酸异冰片酯(IBOMA)等作为功能单体,通过半连续溶液聚合工艺,最后加水分散制得水性羟基丙烯酸树脂。利用FT-IR、透光度、粘度分析研究了单体配比、引发剂(BPO)用量、温度、链转移剂(DDM)用量、功能单体用量等因素对树脂性能的影响。结果表明,当AA、HEA、IBOMA、BPO和DDM的质量分数分别为3%、12%、10%、3%和2%,聚合反应温度100℃时可获得粘度为5 Pa.s,固含量约45%的水性羟基丙烯酸树脂。 相似文献
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环氧基丙烯酸阴极电泳涂料的制备与表征 总被引:2,自引:0,他引:2
采用甲基丙烯酸甲酯(MMA)、丙烯酸丁酯(BA)、丙烯酸缩水甘油酯(GA)合成丙烯酸阳离子树脂,添加封闭型IPDI多异氰酸酯后,制备了环氧基丙烯酸阴极电泳涂料,并用红外光谱对固化前后涂膜结构进行表征.结果表明,环氧基在固化过程中会参与交联反应,电泳液的稳定性、涂膜的物理性能和耐化学品性能由胺值、缩水甘油酯单体种类、丙烯酸缩水甘油酯(GA)含量和封闭型多异氰酸酯用量等因素决定.以GA为功能性单体,摩尔用量占18%~21%,胺值为40~50 mgKOH(g(1,封闭型IPDI多异氰酸酯质量分数为20%~25%,130℃下固化20 min时,得到的电泳涂膜外观平整、硬度高、附着力和耐化学品性好,产品成本低. 相似文献
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综述了基于超亲水超疏油原理的网膜的研究进展及其在油水分离中的应用。首先介绍了研究的理论基础,包括构筑超亲水超疏油网膜的理论基础及膜分离原理,膜的基本性能及影响因素,液桥原理在超亲水超疏油膜中的应用以及该类膜的结构、制备的原材料和制备的基本方法。然后全面综述了刺激响应超亲水超疏油膜,超亲水及水下超疏油膜,无机结晶纳米线超亲水超疏油膜,分子刷结构超亲水超疏油膜及可用于含油乳液分离的网膜等的研究进展。最后指出了目前在该领域的研究中存在的一些问题,主要包括膜分离的基本理论,制备膜的原材料、膜通量、膜寿命及应用范围等,并对未来的发展进行了展望。 相似文献
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Bismuth-doped tin dioxide nanometer powders were prepared by co-precipitation method using SnCl4 and Bi(NO3)3 as raw materials. The effects of calcining temperature and doping ratio on the particle size, composition, spectrum selectivity of bismuth-doped tin dioxide and the phase transition of Bi-Sn precursor at different temperatures were studied by means of X-ray diffraction, transmission electron microscopy, ultraviolet-visual-near infrared diffuse reflection spectrum and the thermogravimetric-differential scanning calorimetry. The results show that prepared bismuth-doped tin dioxide powders have excellent characteristics with a single-phase tetragonal structure, good dispersibility, good absorbency for ultraviolet ray and average particle size less than 10 nm. The optimum conditions for preparing bismuth-doped tin dioxide nanometer powders are as follows: calcining temperature of 600℃, ratio of bismuth-doped in a range of 0. 10 - 0.30, and Bi-Sn precursor being dispersed by ultrasonic wave and refluxed azeotropic and distillated with mixture of n-butanol and benzene. The mechanism of phase transition of Bi-Sn precursor is that Bi^3+ enters Sn-vacancy and then forms Sn-O-Bi bond. 相似文献
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