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991.
Abstract— In response to the increasing structural applications in duplex steels for welded structures, fatigue behaviour of a SAF 2304 grade duplex stainless steel was investigated, considering both the base metal and GTAW welded joints. Fatigue curves and fatigue limits under rotary bending fatigue were obtained. The study focused attention on the microstructural features of fatigue crack propagation of the two series of experiments, thereby permitting an evaluation of the tortuous crack path of welded joints and the mechanisms related to threshold microstructural barriers. 相似文献
992.
岩心PI值试验研究及应用 总被引:5,自引:0,他引:5
主要论述了在多功能采油化学用剂评价仪上进行的岩心PI值试验的步骤,现象及结论。重点考察了岩心PI值与渗透率、流量及注入截面面积的关系;平行管岩心复合PI值和其中单管岩心PI值的关系。 相似文献
993.
对溢洪闸门自动监控系统中几个问题的探讨 总被引:1,自引:1,他引:0
结合某水电站介绍了溢洪闸门自动监控系统的结构、功能,讨论了该研制过程中的几个问题的解决办法. 相似文献
994.
995.
含淀粉聚乙烯膜的时控光降解研究 总被引:2,自引:0,他引:2
使用复合光降解剂,得到了可光降解的生物降解膜。对膜的光降解进行了考察,并对影响光降解的因素进行了讨论,结果表明,我们所制得的膜是一种较好的时控光降解膜。 相似文献
996.
997.
介绍了调剖剂XJF的配方,讨论了影响调剖剂性能的配方因素(膨润土含量、HPAM溶液浓度、XJ用量及添加剂Fc的浓度),考察了封堵能力和应用范围,简介了在火烧山油田现场试验的结果。 相似文献
998.
Shubneesh Batra Nanseng Jeng Akif Sultan Kyle Picone Surya Bhattacharya Keun-Hyung Park Sanjay Banerjee David Kao Monte Manning Chuck Dennison 《Journal of Electronic Materials》1993,22(5):551-554
When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal
budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface
to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon
substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the
leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in
the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection
from the interface. 相似文献
999.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
1000.
M. R. Islam R. V. Chelakaea J. G. Neff K. G. Fertitta P. A. Grudowski A. L. Holmes F. J. Ciuba R. D. Dupuis J. E. Fouquet 《Journal of Electronic Materials》1995,24(6):787-792
AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen
contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure
of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on
these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence,
and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly
much greater than those grown with the regular-grade TMA1. The use of AsH3 purification improves the PL intensity. 相似文献