On the Electron Transient Response in a 50 nm MOSFET by Ensemble Monte Carlo Simulation in Presence of the Smoothed Potential Algorithm

The inclusion of a smoothed potential algorithm within the Ensemble Monte Carlo method (EMC) to account for quantization effects in the inversion layer of a silicon n-MOSFET has been discussed by several authors. Most of the data reported deal with steady state terminal current, transconductance, and capacitance. Within this approach, the electric field acting on each particle is computed from the smoothed potential, which introduces a potential barrier underneath the gate region that pushes the carriers away from the interface, thus accounting for space quantization effects. However, in the EMC method, the electric field at the interface is also used to compute the displacement charge/current during the transient regime. In the implementation of the smoothed potential algorithm, care must be taken when computing this component of the total gate charge. We distinguish between two differently computed electric fields, one from the smoothed potential used for the charge transport and the other one computed from the real potential, as obtained from the solution of Poisson's equation, and used for the displacement charge. We propose this procedure in order to properly include space quantization effects, and at the same time avoid the inaccuracy introduced by the smoothed potential in the displacement charge.     

场效应管逆变弧焊电源的研制

本文介绍了场效应管逆变弧焊电源的工作原理及其驱动电路的设计,讨论了该电源系统的控制方式。所研制的电源设有空载分频、过流和过热保护功能,能够输出恒流和恒流带外拖的两种外特性,适用于 TIG 焊和手工电弧焊。     

功率MOS器件单粒子烧毁效应的PSPICE模拟

建立了功率MOS器件单粒子烧毁效应的等效电路模型和相应的参数提取方法,对功率MOS器件的输出特性和单粒子烧毁效应的机理进行了分析和PSPICE模拟,模拟结果与文献中提供的数据相符合,表明所建立的器件模型和模拟方法是可靠的。     

CPU电源电路用沟槽棚MOSFET与e-JFET开关管的功耗对比研究

本文主要针对低压功率开关管的功耗进行了理论分析，并在此基础上分别对两种典型结构槽栅MOSFET和e-JFET在不同工作频率 下的功耗分布和总功耗进行了定量的仿真计算和对比。通过研究发现，在一定工作条件下，常闭型e-JFET比目前常用的沟槽栅型MOSFET仅开关功耗就降低约24%，总功耗则降低约30%，将其运用于CPU电源电路中的开关功率管的制造，在高频领域有着极好的应用前景。     

0.35 μm CMOS T/R Switch for 2.4 GHz Short Range Wireless Applications

This paper describes the design and implementation of a transmit/receive switch for 2.4 GHz ISM band applications. The T/R switch is implemented in a 0.35 m bulk CMOS process and it occupies 150 m · 170 m of die area. A parasitic MOSFET model including bulk resistance is used to optimize the physical dimensions of the transistors with regard to insertion loss and isolation. The measured insertion loss is 1.3 dB without port matching. Simulations using measured s-parameters indicate that an insertion loss of 0.8 dB can be obtained with a conjugate match. The measured isolation is 42 dB and the maximum transmit power is 16 dBm.     

功率MOSFET器件单粒子烧毁252Cf源模拟试验研究

本工作涉及利用²⁵²Cf源进行辐射效应试验研究的方法。结合功率MOSFET器件单粒子烧毁测试技术，对功率MOSFET器件辐射效应进行模拟试验研究。研究结果表明：在空间辐射环境下，功率MOSFET器件尽量使用在低电压范围内；在电路设计中附加必要的限流电阻是1种十分有效的抗单粒子烧毁措施。     

一种深亚微米MOSFET高频噪声模型

基于深亚微米MOSFET的短沟道效应(迁移率退化、热载流子效应、体电荷效应、沟道长度调制效应等),提出了一种高频沟道噪声分析模型.该分析模型不仅具有较高的精确性,而且只包括MOSFET的工艺参数和电学参数,不含有微积分和拟合参数,较大地提高了MOSFET高频噪声模型的易用性.根据MOSFET的高频等效电路,得出了MOSFET的噪声系数模型.实验结果证明,提出的深亚微米MOSFET高频噪声模型的仿真结果与测试结果的平均误差不到0.4 dB,并与其他高频沟道噪声分析模型进行了比较.     

低压VDMOS氧化层厚度与特征电阻的优化设计

介绍VDMOS阈值电压的定量计算及氧化层厚度对他的影响,及VDMOS的氧化层厚度与特征电阻RONA的关系,讨论了栅氧化层的厚度对特征电阻的影响并进行了简单计算。此外,讨论了最新的VDMOS结构和制造技术,对器件阈值与特征电阻进行了优化。     

注氮、注氟SIMOX/NMOS器件辐射加固性能

本文对注N、注F的SIMOX/NMOSFET器件的抗辐射特性进行了研究,发现两者都能减少埋氧层及其界面的空穴陷阱,对辐射加固有所改善,特别是对大剂量辐射的加固更为明显.总体来说,在此能量下,离子注入剂量越大,加固越好.由于注入的剂量对片子本身的阈值电压有很大影响,所以选择对于器件初始特性影响较小的剂量及能量非常重要.     

新一代纳米级器件物理特性仿真工具——SenTaurus Device

介绍了Synopsys Inc.新近推出的新一代纳米层次器件物理特性仿真工具——SenTaurus Device的功能特点以及进行器件物理特性仿真的典型流程。重点介绍了为实现nm级器件物理特性的模拟引入的诸多近代器件物理模型。利用SenTaurus Device对基于Sentaurus Process生成的一个90nm NMOS器件进行了器件物理特性仿真,并给出了相应结果。