Kinetics of DyNi2 film growth by electrochemical implantation

Electrochemical implantation was performed at Ni electrodes to form DyNi₂ films at 0.55 V (vs. Li⁺/Li), 0.62 V, and 0.70 V for 0.5-5.0 h in a molten LiCl-KCl-DyCl₃ (0.50 mol%) system at 700 K. It was found that the DyNi₂ films grew linearly with time with coulomb efficiency of about 100%. The obtained growth rates were higher at more negative potentials, i.e., 0.47 μm min⁻¹ at 0.55 V, 0.32 μm min⁻¹ at 0.62 V, and 0.14 μm min⁻¹ at 0.70 V. On the analogy of the metal oxide growth, the observed rapid and linear growth of DyNi₂ films may be explained by the existence of the outer and inner DyNi₂ layers.     

离子束混合工艺对材料抗蚀性能的影响

本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。     

A novel technique for fabrication of metallic structures on polyimide by selective electroless copper plating using ion implantation

The successful use of palladium ion implantation into polyimide to seed an electroless plated film of copper on the polyimide surface is reported. Polyimide (Hitachi PIX 3400) was implanted with palladium ions to doses of 1.5 × 10¹⁵ − 1.2 × 10¹⁷ ions cm⁻² using a MEVVA ion implanter. The implanted ions acted as sites for nucleation of copper film. A copper film was then deposited on implanted polyimide using a commercial electroless plating solution. The ion energy was kept low enough to facilitate a low critical ‘seed’ threshold dose that was measured to be 3.6× 10¹⁶ Pd ions cm⁻². Test patterns were made using polyimide to study the adaptability of this technique to form thick structures. Plated films were studied with optical microscopy, Rutherford Backscattering Spectrometry (RBS) and Profilometry. The adhesion of films was qualitatively assessed by a ‘scotch tape test’. The film growth (thickness) was observed to be linear with plating time. A higher implantation dose led to greater plating rates. The adhesion was found to improve with increasing dose.     

离子注入浅结制备技术

根据近年来的文献资料总结报道几种离子注入浅结制备技术，即：大角度偏转注入、分子离子注入、双离子注入，通过介质掩膜注入，注入固体源驱入扩散再分布、等离子体浸没离子注入（ＰＩＩＩ）和反冲离子注入等。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Microstructural Effects of Ion Implantation on Molybdenum

The effects of ion implantation and subsequent annealing on the microstructure of molybdenum have been investigated by transmission electron microscopy. The ions investigated were carbon, nitrogen, and tellurium. The ion-induced damage was found to give rise to grain boundary migration phenomena both during implantation and during subsequent annealing. Precipitation or ordering was found to occur for each ion on annealing.     

特征X射线能谱法测定Fe^＋注入小麦种子的深度

用１１０ｋｅＶ Ｆｅ＾＋离子束垂直注入小麦种胚后，在扫描电子显微镜上沿种子纵沟剖面，在不同深度上测量Ｆｅ元素被激发出的特征Ｘ射线强度分布，结果表明分布呈指数衰减，与晶体中的热扩散分布相类似，并对此进行了讨论。     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。     

Magnetism in SiC implanted with high doses of Fe and Mn

High concentrations (0.1–5 at.%) of Mn or Fe were introduced into the near-surface region (≤2000 Å) of 6H-SiC substrates by direct implantation at ～300°C. After annealing at temperatures up to 1000°C, the structural properties were examined by transmission electron microscopy (TEM) and selected-area diffraction pattern (SADP) analysis. The magnetic properties were examined by SQUID magnetometry. While the Mn-implanted samples were paramagnetic over the entire dose range investigated, the Fe-implanted material displayed a ferromagnetic contribution present at <175 K for the highest dose conditions. No secondary phases were detected, at least not to the sensitivity of TEM or SADP.