Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000℃

The effect of the high-temperature helium irradiation on microstructural evolution of 3C-SiC was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). 3C-SiC wafers were irradiated with 130 keV He⁺ ions at fluences of 2 × 10¹⁶ He⁺/cm², 4 × 10¹⁶ He⁺/cm² and 2 × 10¹⁷ He⁺/cm² at 1000℃. Helium bubbles, dislocation loops, and their interaction with the stacking faults were focused on and characterized by TEM. Helium bubbles preferentially nucleate and grow on stacking faults. Bubble links on the (100) plane in 3C-SiC are formed. In addition, stacking faults can effectively trap irradiation-induced lattice defects to enhance their recovery. The type of irradiation-induced lattice defects and elemental distribution are also investigated. The research results are valuable for the 3C-SiC used in the advanced nuclear energy systems.     

High-resolution FIB-TEM-STEM structural characterization of grain boundaries in the high dielectric constant perovskite CaCu3Ti4O12

In this work, the grain boundaries composition of the polycrystalline CaCu₃Ti₄O₁₂ (CCTO) was investigated. A Focused Ion Beam (FIB)/lift-out technique was used to prepare site-specific thin samples of the grain boundaries interface of CCTO ceramics. Scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectrometry (EDXS) and Electron Energy Loss Spectroscopy (EELS) systems were used to characterize the composition and nanostructure of the grain and grain boundaries region. It is known that during conventional sintering, discontinuous grain growth occurs and a Cu-rich phase appears at grain boundaries. This Cu-rich phase may affect the final dielectric properties of CCTO but its structure and chemical composition remained unknown. For the first time, this high-resolution FIB-TEM-STEM study of CCTO interfacial region highlights the composition of the phases segregated at grain boundaries namely CuO, Cu₂O and the metastable phase Cu₃TiO_4.     

Synthesis and Characterization of Co Nanocomposite Based on Poly(benzimidazole-amide) Matrix and Their Behavior as Catalyst in Oxidation Reaction

2,6-Bis(5-amino-1H-benzimidazol-2-yl)pyridine was prepared and characterized by Fourier transform infrared spectroscopy, elemental analysis, ¹H-NMR, and ¹³C-NMR spectroscopic methods. Then a new poly(benzimidazole-amide) was synthesized by polymerization of the corresponding diamine and isophthalic acid. The obtained poly(benzimidazole-amide) exhibited good yield and high thermal stability. Due to the existence of benzimidazole moieties in polymer’s structure, it has the tendency to form complexes with metal ions. So, a new poly(benzimidazole-amide)/Co nanocomposite was prepared. Morphological studies revealed that metal nanoparticles were dispersed in the polymer matrix without any aggregation. poly(benzimidazole-amide)/Co nanocomposite was used as a catalyst in the oxidation of ethyl benzene to acetophenone with tert-butyl hydroperoxide.     

Nonlinear dynamic behaviors and control based on simulation of high-purity heat integrated air separation column

In this paper, the dynamic behaviors on the basis of simulation for high-purity heat integrated air separation column (HIASC) are studied. A nonlinear generic model control (GMC) scheme is proposed based on the nonlinear behavior analyses of a HIASC process, and an adaptive generic model control (AGMC) scheme is further presented to correct the model parameters online. Related internal model control (IMC) scheme and multi-loop PID (M-PID) scheme are also developed as the comparative base. The comparative researches are carried out among these linear and nonlinear control schemes in detail. The simulation research results show that the proposed AGMC schemes present advantages in both servo control and regulatory control for the high-purity HIASC.     

Effect of strain rate on the dynamic compressive mechanical behaviors of rock material subjected to high temperatures

Strain rate is not only an important measure to characterize the deformation property, but also an important parameter to analyze the dynamic mechanical properties of rock materials. In this paper, by using the SHPB test system improved with high temperature device, the dynamic compressive tests of sandstone at seven temperatures in the range of room temperature to 1000 °C and five impact velocities in the range of 11.0–15.0 m/s were conducted. Investigations were carried out on the influences of strain rate on dynamic compressive mechanical behaviors of sandstone. The results of the study indicate that the enhancement effects of strain rates on dynamic compressive strength, peak strain, energy absorption ratio of sandstone under high temperatures still exist. However, the increase ratios of dynamic compressive strength, peak strain, and energy absorption ratio of rock under high temperature compared to room temperature have no obvious strain rate effects. The temperatures at which the strain rates affect dynamic compressive strength and peak strain most, are 800, and 1000 °C, respectively. The temperatures at which the strain rates affect dynamic compressive strength and peak strain weakest, are 1000 °C, and room temperature, respectively. At 200 and 800 °C, the strain rate effect on energy absorption ratio are most significant, while at 1000 °C, it is weakest. There are no obvious strain rate effects on elastic modulus and increase ratio of elastic modulus under high temperatures. According to test results, the relationship formula of strain rate with high temperature and impact load was derived by internalizing fitting parameters. Compared with the strain rate effect at room temperature condition, essential differences have occurred in the strain rate effect of rock material under the influence of high temperature.     

Optimal siting and sizing of demand response in a transmission constrained system with high wind penetration

This paper describes algorithms that use demand-side management to address large-scale integration of wind power. In particular, demand response (DR) is used to manage wind power intermittency by shifting the time that electrical power system loads occur in response to real-time prices and wind availability. An economic dispatch with transmission, DR capacity and operational constraints is used to model the operation of a transmission constrained system with a high penetration of wind power. This optimization model is used to determine the optimal sizing and distribution of DR given a fixed budget for customer incentives and the installation of enabling technology. We demonstrate the effectiveness of the operational model based on a simple PJM 5-bus system and an IEEE 118-bus system. Simulation results show that transmission constraints have a greater effect on sizing of DR capacity than the location of wind power, which means that buses electrically close to congested lines tend to have higher incentives to deploy DR resources than other buses. The second part of the work examines optimal siting of technology that enables DR based on the frequency of DR based load changes, which are generally a function of the network location.     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Enhance cycling performance of LiMn2O4 cathode by Sr2+ and Cr3+ doping

Spinel LiSr_0·1Cr_0·1Mn_1·8O₄ was synthesised by high temperature solid state method in order to enhance the electrochemical performance. The LiSr_0·1Cr_0·1Mn_1·8O₄ (LSCMO) materials were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical tests. The XRD and SEM studies confirm that LSCMO had spinel crystal structure with a space group of Fd3m, and the particle of LSCMO shows irregular shape. The cyclic voltammetry data illustrated that the heavy current charge–discharge performance of LMO was improved by Sr²⁺ and Cr³⁺ doping. The galvanostatic charge–discharge of LSCMO cathode materials was measured at 1, 5, 10 and 20 C. The results indicated that LSCMO improved the capacity retention.     

2020年电子电路技术热点

文章归纳了2020年电子电路产业一些技术热点,主要有5G电路板设计和基材,制造方面半加成法、3D打印、直接金属化孔电镀和垂直互连结构等技术,以及集成电路封装载板技术。     

Controlling thickness to tune performance of high-mobility transparent conducting films deposited from Ga-doped ZnO ceramic target

Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm²/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm²/Vs, low resistivity of 5.3 × 10^?4 Ωcm, and good transmittance of 83.3 %.