An improved cryofixation method: cryoquenching of small tissue blocks during microwave irradiation

The metal contact method of rapid freezing is greatly improved by irradiating the specimen with microwaves at 2.45 GHz for a short period of time (50 ms), while pushing the specimen onto the surface of the copper block cooled by liquid N₂. The microwave irradiation, together with two technical improvements (a light-mass plunger and a recently developed β-gel shock absorber) for preventing bounce, produces a good freezing zone for squid retina, with high reproducibility for each experimental trial, extending from the contact surface to a depth of about 15 μm, which is comparable to the depth obtained by the metal contact method using liquid He in the absence of microwave irradiation. A good freezing zone was also experimentally demonstrated in specimens of rat liver and heart muscle. Microwave irradiation does not have appreciable effects on the ultrastructure of squid retina. The mechanism underlying the improvement in the rapid freezing under the microwave irradiation is discussed.     

Low-resistance polysilicon process in contact application for high density devices

For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber with an in-situ H₂-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace for good step coverage. From chain resistance, Kelvin R_c, and current-voltage (I–V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests a breakthrough in the small-sized, semiconductor device application.     

Comparative study of the electrical properties of diamond films grown by microwave plasma assisted and hot-filament chemical vapor deposition

Schottky diodes were built on different polycrystalline diamond films grown by Microwave Plasma and Hot Filament Chemical Vapor Deposition and their electrical properties were studied. The barrier height increased with the diamond film quality and the corresponding ideality factor decreased. Even though the lower-quality HFCVD film displayed poor rectifying properties, it was found to be much less sensitive to variations in the operating conditions (air vs. vacuum). The activation energies of the films depend on morphological parameters, as preferable grain size or orientation. The bulk conduction also depends on the quality of the deposited films, changing from ohmic to trap-free or shallow trap SCLC and SCLC with an exponential distribution of traps. The hypothesis of using the electrical measurements as an indicator for film quality has been discussed.     

Finite element simulation of the mechanics of flat contact pad fretting fatigue tests

An understanding into the macro kinetic and kinematic behaviour of fretted surfaces is provided. Making use of a modified version of a previously developed in‐house two‐dimensional elastic–plastic finite element analysis numerically simulates flat contact pad fretting fatigue tests. Basic macro mechanics concepts are adopted to idealise two bodies with rough contact surfaces and loaded at two different sites with arbitrary axial loading profiles. A time scale factor is devised to recognise the earliest candidate out of the events possibly accommodated at each loading increment. The present analysis utilises a relevant experimental set up developed in the Structural Integrity Research Institute of the University of Sheffield as an application. Computational results accurate to within 1.2% and corresponding to one contact pad span and six constant normal loads acting individually with four amplitudes of two sinusoidal axial load cycles are presented. The present computations include (1) the development of the global and local normal and tangential reactions and relative sliding displacement acting along the fretting surfaces and (2) contact pad deformation, generated stress fields and plasticity development within the neighbouring region of the fretted area.     

长输管线变电所备用电源自动投入系统的改造

根据管道储运公司下属的各变电所目前的运行方式以及备用电源自动投入系统(以下简称“备自投”)的运行情况，指出了备自投使用中的不足之处，并通过增加对应断路器的辅助触点来完善备自投，使变电所运行更加可靠。     

Relation between microstructure, properties and spark plasma sintering (SPS) parameters of pure ultrafine WC powder

A combined experimental/numerical methodology is developed to fully consolidate pure ultrafine WC powder under a current-control mode. Three applied currents, 1900, 2100 and 2700 A, and a constant pressure of 20 MPa were employed as process conditions. The developed spark plasma sintering (SPS) finite-element model includes a moving-mesh technique to account for the contact resistance change due to sintering shrinkage and punch sliding. The effects of the heating rate on the microstructure and hardness were investigated in detail along the sample radius from both experimental and modeling points of view. The maximum hardness (2700 HV10) was achieved for a current of 1900 A at the core sample, while the maximum densification was achieved for 2100 and 2700 A. A direct relationship between the compact microstructure and both the sintering temperature and the heating rate was established.     

Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-Gan

The effects of boiling Aqua Regia (AQ), N₂/Cl₂ plasma followed by AQ and O₂ plasma followed by AQ surface treatments prior to Ni/Au (20 nm/20 nm) metallization to p-GaN:Mg (∼ 3 × 10¹⁷ cm^− 3) have been investigated. N₂/Cl₂ plasma was employed in a bid to lower the Ga/N and O/Ga ratios of the GaN surface to improve the contact properties to p-GaN, while O₂ plasma was employed as an alternative to incorporate O into the Ni/Au system. Results show that a low Ga/N ratio does not necessarily correspond to a better contact. The positive effect of O₂ over N₂ anneal is observed only for the AQ-treated sample, although the mechanisms responsible for its positive effect: NiO formation and Ni/Au layer-reversal were observed for all O₂-annealed contacts. We conclude that the effect of O₂ anneal on the Ni/Au contact is dependant on the p-GaN surface prior to metallization.     

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川东地区石炭系气藏的气水界面主要分布在两个范围内，一是潜伏构造气藏的气水界面海拔较深，一般为-3800～-4700m；另一是主体构造气藏的较浅，一般为-1600～-2600m。各构造带之间相邻的潜伏圈闭气藏往往受同一大向斜内的水域相隔，并在原始状态下相互维系了气水的压力平衡，因此同一向斜内某一构造的水井资料就可用于计算另一构造同一气藏的气水界面。基于这种认识，章根据同向斜域内相邻构造的水井资料计算卧龙河、双家坝、云和寨、高峰场、胡家坝等气田的原始气水界面，得到的气水界面与实际误差为-3～-18m。说明该方法在实际应用中可靠性较好，可节省钻井投资，缩短气田的评价周期。     

反复荷载下钢筋混凝土剪力墙的非线性有限元分析

本文介绍了反复荷载下非线性有限元分析程序,该程序针对钢筋混凝土剪力墙类结构的特点,采用了钢筋与混凝土复合单元计算模型,考虑混凝土裂面接触效应的反复加载混凝土应力-应变关系。在钢筋应力-应变关系中,还同时考虑了混凝土开裂后钢筋的拉伸强化效应及反复荷载下钢筋的Bausinger效应。本文还介绍了作者利用该程序对反复荷载试验的试件及Ger-venka的剪力墙板进行的计算分析。结果表明,本文所采用的分析模型是合理、准确的;和国内外以往的分析比较,本文的方法成功地消去了力-位移滞回曲线中的拐点现象,而且计算的混凝土裂缝开闭也能和实测较好地吻合。表明本文方法能为分析反复荷载下钢筋混凝土剪力墙类结构性能提供一个准确、有力的工具。     

接地电阻对地电场观测的影响及克服方法

论述了测量电极的接地电阻对振幅和相位测量精度的影响规律，提出了克服接地电阻影响，提高野外观测精度的切实可行的方法和技术。