聚丙烯酰胺/氧化石墨纳米复合材料的研究

氧化石墨具有良好的层状结构，其层间具有丰富的官能团，能与有机聚合物形成插层纳米复合材料进而改善材料的性能．采用层离吸收-原位聚合法制备了聚丙烯酰胺／氧化石墨纳米复合材料，并采用XRD、HREM及DSC等对其结构和性能进行了表征。结果表明，聚丙烯酰胺与氧化石墨两者之间存在着较强的相互作用，材料的玻璃化转变温度得到提高，层离吸收-原位聚合法是获得聚丙烯酰胺／氧化石墨层纳米复合材料的有效途径，聚丙烯酰胺在氧化石墨中存在着多种排列方式，不同层间距(1．6nm和2．8nm)的聚丙烯酰胺／氧化石墨纳米复合结构同时存在。     

二氧化锡溅射工艺研究

SnO2 是最早使用也是目前使用最广泛的一种气敏材料 ,使用该材料设计制作的气敏传感器具有许多优点。在简要介绍溅射镀膜的成膜过程和特点的基础上 ,着重介绍了SnO2 膜的制备流程 ,分析了功率和温度变化对成膜质量的影响     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

绚丽多彩的楚汉丝织品（之二）──色彩与纹饰

湖南出土的楚汉丝织品，以马王堆一、三号汉墓所出为代表，其色彩反映了我国当时印染工艺技术所达到的高度水平，其纹饰则显示了鲜明的时代特征，表现了运动、气势和古拙的艺术风格，充满着神奇浪漫的色彩。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

广钢转炉分厂2号方坯连铸机拉速问题的探讨

通过分析钢水在结晶器内凝固的不均匀性及对钢水结晶的热量平衡计算，讨论连铸中间包钢水温度、结晶器冷却水流量及进出水温差对拉坯速度的影响。     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.     

任丘油田雾迷山油藏抽油机井系统效率初步探讨

总公司1996年对任丘雾迷山油藏抽油机井进行测试,系统效率高达51%~68%,其结果出乎意料。从影响抽油机系统效率的几大因素入手,分析出任丘雾迷山油藏抽油机井系统效率高的主要原因。任丘雾迷山油藏属裂缝性破酸盐岩油藏(即灰岩油战),由于其裂缝发育、渗透性好、油层厚度大、地层温度高、油气比小、饱和压力低等,使得抽油机井生产呈现如下特点:()大泵径,长冲程,低冲次大排量采油;(2)中浅京挂,小沉没度;(3)抽汲流体为液体单相,泵充满程度高;(4)部分井为连抽"带喷"状态,抽油系活塞底部受力大;(5)井液粘度低,油井不结蜡,摩阻损失小。由于这些特点以及近年来使用的新型节能抽油机,使得抽油机井系统效率大大高于其它油田抽油机井系统效率。