Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs

Quantum transport properties of nano-scaled SOI-MOSFETs are investigated based on a quantum Monte Carlo (MC) device simulation. The quantum mechanical effects are incorporated in terms of a quantum correction of potential in the well-developed particle MC computational techniques. The ellipsoidal multi-valleys of silicon conduction band are also considered in the simulation. First, the validity of the quantum MC technique is verified by comparing the simulated results with a self-consistent Schrödinger-Poisson solution at thermal equilibrium. Then, we apply the technique to non-equilibrium and quasi-ballistic quantum transport in nano-scaled SOI-MOSFETs.     

Objective Oriented Multistage Ring Shear Test for Shear Strength of Landslide Soil

Ring shear tests were conducted on five samples of different nature with a modified Imperial College type ring shear machine. The three different testing methods used, (1) individual sample testing for each normal stress, (2) increasing load multistage ring shear test, and (3) reducing load multistage ring shear test, all showed similar effective residual internal friction angle for the samples, irrespective of testing method. However, effective residual shear intercept was different according to the testing methodology. The internal friction angle did not vary, particularly after the first minimum point in the stress displacement curve, although the residual shear intercept decreased with increase in the displacement. The thickness of the shearing zone increased along with the displacement. The remolded peak shear strength for saturated conditions at field dry density varied with the consolidation history. Measurement of remolded peak shear strength was possible in a single sample using the increasing load multistage ring shear test at normal consolidation. The equilibrium water content of the sample after the ring shear test was nearly equal to the plastic limit.     

Semantic Web: A road to the knowledge infrastructure on the internet

In this article, I describe the basic technologies for Semantic Web and relationship between Semantic Web and Knowledge Representation in Artificial Intelligence. Semantic Web is planned as an extension of the current web in order to help cooperation between computers and humans, i.e., computers and humans are expected to understand each other in the knowledge level. I first describe the vision of the Semantic Web, then introduce the current Semantic Web technologies, i.e., RDF, RDFS, and OWL. I describe relationship between the trend of Semantic Web and Knowledge Representation, and clarify challenges and difficulties of Semantic Web from the point of view of Knowledge Representation. Hideaki Takeda: He is a professor at National Institute of Informatics (NII) and a professor in Department of Informatics at the Graduate University of Advanced Studies (Sokendai). He received his Ph.D. from the University of Tokyo in 1991. His research interest in computer science includes ontology engineering, community informatics and knowledge sharing systems.     

Partial redundancy elimination for access expressions by speculative code motion

We present a new memory access optimization for Java to perform aggressive code motion for speculatively optimizing memory accesses by applying partial redundancy elimination (PRE) techniques. First, to reduce as many barriers as possible and to enhance code motion, we perform alias analysis to identify all the regions in which each object reference is not aliased. Secondly, we find all the possible barriers. Finally, we perform code motions in three steps. For the first step, we apply a non‐speculative PRE algorithm to move load instructions and their following instructions in the backwards direction of the control flow graph. For the second step, we apply a speculative PRE algorithm to move some of them aggressively before the conditional branches. For the third step, we apply our modified version of a non‐speculative PRE algorithm to move store instructions in the forward direction of the control flow graph and to even move some of them after the merge points. We implemented our new algorithm in our production‐level Java just‐in‐time compiler. Our experimental results show that our speculative algorithm improves the average (maximum) performance by 13.1% (90.7%) for jBYTEmark and 1.4% (4.4%) for SPECjvm98 over the fastest algorithm previously described, while it increases the average (maximum) compilation time by 0.9% (2.9%) for both benchmark suites. Copyright © 2004 John Wiley & Sons, Ltd.     

Layout and results from the initial operation of the high-resolution x-ray imaging crystal spectrometer on the Large Helical Device

First results of ion and electron temperature profile measurements from the x-ray imaging crystal spectrometer (XICS) diagnostic on the Large Helical Device (LHD) are presented. This diagnostic system has been operational since the beginning of the 2011 LHD experimental campaign and is the first application of the XICS diagnostic technique to helical plasma geometry. The XICS diagnostic provides measurements of ion and electron temperature profiles in LHD with a spatial resolution of 2 cm and a maximum time resolution of 5 ms (typically 20 ms). Ion temperature profiles from the XICS diagnostic are possible under conditions where charge exchange recombination spectroscopy (CXRS) is not possible (high density) or is perturbative to the plasma (low density or radio frequency heated plasmas). Measurements are made by using a spherically bent crystal to provide a spectrally resolved 1D image of the plasma from line integrated emission of helium-like Ar(16 +). The final hardware design and configuration are detailed along with the calibration procedures. Line-integrated ion and electron temperature measurements are presented, and the measurement accuracy is discussed. Finally central temperature measurements from the XICS system are compared to measurements from the Thomson scattering and CXRS systems, showing excellent agreement.     

Elimination of Voids at Interface of <Emphasis Type="Italic">β</Emphasis>-SiC Films and Si Substrate by Laser CVD

Void-free β-SiC films were deposited on Si(001) substrates by laser chemical vapor deposition using hexamethyldisilane (HMDS) as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced (T_in), on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from <001> to random to <111> with increasing T_in. The surface showed a layer-by-layer microstructure with voids above T_in ? 773 K, and then transformed into mosaic structure without voids at T_in= 298 K. The mechanism of the elimination of voids was discussed. At T_in =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids.     

Preparation of (110)-oriented SrTiO3 film on quartz glass by laser chemical vapor deposition

SrTiO₃ (STO) film was prepared on quartz glass by laser chemical vapor deposition at a deposition temperature (T_dep) ranged from 760 to 1104 K. Effect of the T_dep on the orientation, crystallinity, texture, and microstructure of the STO film was investigated. As the T_dep was increased, the preferred orientation of the STO film tended to be (110)-orientated with corresponding texture coefficient (TC) on the (110) reflection enhanced from 2.3 to 6; meanwhile, the full width at half maximum of the ω-scan on the (110) reflection decreased from 0.85° to 0.59°. The (110)-oriented grains were in wedge shape about 60 × 150 nm in size, which tended to be flat at an elevated T_dep of 1104 K.     

Phase transformation and interface segregation behavior in Si3N4 ceramics sintered with La2O3–Lu2O3 mixed additive

Microstructure and mechanical property of silicon nitride (Si₃N₄) ceramic are strongly dependent on the selection of sintering additives. When rare‐earth (RE) oxide is used as the sintering additive, segregation of RE ions at interface between Si₃N₄ grain and intergranular glassy film (IGF) is believed to play a critical role. Although the ionic radius of RE ion is known to be an empirical parameter to modify the mechanical property, the correlation between the segregated ions and their ionic radii is still under controversy. In order to address this issue, (i) rate of α‐β phase transformation and (ii) segregation behavior at the interface were studied for Si₃N₄ ceramics sintered using mixture of La₂O₃ and Lu₂O₃ as additives in this study. Specimens of Lu content 30% and higher exhibited lower activation energies for the α‐β phase transformation as compared with those of Lu content 20% and lower. In terms of the segregation behavior, La was preferably segregated at one site and Lu at the other site along β‐Si₃N₄/IGF interface in the specimens of Lu content 30% and higher. It is understood from these results that Lu segregation site should be more closely related with grain growth.