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41.
Huang Y Ewalt KL Tirado M Haigis R Forster A Ackley D Heller MJ O'Connell JP Krihak M 《Analytical chemistry》2001,73(7):1549-1559
Bioparticle separation, bioparticle enrichment, and electric field-mediated immune detection were carried out on microfabricated semiconductor chips utilizing ac and dc electric fields. Microscale separation on a chip surface having an active area of approximately 16 mm2 was demonstrated for a mixture of Bacillus globigii spores and Escherichia coli bacteria. Dielectrophoretic enrichment was performed by collecting target bioparticles from a flow stream in flow cells of 47.5 microL, achieving a 20-fold increase in the concentration of E. coli bacteria from a diluted sample, a 28-fold enrichment for peripheral blood mononuclear cells from red blood cells, and a 30-fold increase in white blood cells from diluted whole blood. The ability to manipulate and collect bioparticles and macromolecules at microfabricated electrodes with ac and dc fields was further illustrated in electric field-mediated immunoassays for analyzing the biological identities of E. coli bacteria and B. globigii spores. According to these results, the electric methods for manipulating bioparticles present themselves as viable techniques for novel biomedical applications in sample preparations and biochemical assays on microelectrode arrays. 相似文献
42.
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices 总被引:4,自引:0,他引:4
Jessen G.H. Fitch R.C. Gillespie J.K. Via G. Crespo A. Langley D. Denninghoff D.J. Trejo M. Heller E.R. 《Electron Devices, IEEE Transactions on》2007,54(10):2589-2597
AlGaN/GaN high-electron mobility transistors (HEMTs) were fabricated on SiC substrates with epitaxial layers grown by multiple suppliers and methods. Devices with gate lengths varying from 0.50 to 0.09 mum were fabricated on each sample. We demonstrate the impact of varying the gate lengths and show that the unity current gain frequency response (fT) is limited by short-channel effects for all samples measured. We present an empirically based physical model that can predict the expected extrinsic fT for many combinations of gate length and commonly used barrier layer thickness (tbar) on silicon nitride passivated T-gated AlGaN/GaN HEMTs. The result is that even typical high-aspect-ratio (gate length to barrier thickness) devices show device performance limitations due to short-channel effects. We present the design tradeoffs and show the parameter space required to achieve optimal frequency performance for GaN technology. These design rules differ from the traditional GaAs technology by requiring a significantly higher aspect ratio to mitigate the short-channel effects. 相似文献
43.
This paper examines, experimentally and numerically, the use of thermal emission measurements as a means of assessing severity of damage and monitoring damage growth in composite materials. In contrast to most traditional methods the thermal emission profile reflects the interaction of load, geometry, material and damage in a non-destructive fashion. It represents a possible method for the scaling of test data, obtained from coupon tests, to tests on full scale structures. 相似文献
44.
P. Gogna E. Suarez M. Lingalugari J. Chandy E. Heller E.-S. Hasaneen F.-C. Jain 《Journal of Electronic Materials》2013,42(11):3337-3343
This paper describes novel multibit static random-access memories (SRAMs) implemented using four-channel spatial wavefunction switched field-effect transistors (SWS FETs) with Ge quantum wells and ZnSSe barriers. A two-bit SRAM cell consists of two back-to-back connected four-channel SWS FETs, where each SWS FET serves as a quaternary inverter. This architecture results in a reduction of the field-effect transistor (FET) count by 75% and data interconnect density by 50%. The designed two-bit SRAM cell is simulated using Berkeley short-channel insulated-gate field-effect transistor equivalent-channel models (for 25-nm FETs). In addition, the binary interface logic and conversion circuitry are designed to integrate the SWS SRAM technology. Our motivation is to stack up multiple bits on a single SRAM cell without multiplying the transistor count. The concept of spatial wavefunction switching (SWS) in the FET structure has been verified experimentally for two- and four-well structures. Quantum simulations exhibiting SWS in four-well Ge SWS FET structures, using the ZnSe/ZnS/ZnMgS/ZnSe gate insulator, are presented. These structures offer higher contrast than Si-SiGe SWS FETs. 相似文献
45.
Uniform quantization of wavelet coefficients introduces perceptually disturbing artifacts by decreasing the visual smoothness. In this paper, the local Holder regularity is used to quantify these changes in visual smoothness. A modified uniform quantization scheme that constrains local regularity reduction is proposed. The quantizer modification is applicable to any uniform quantization scheme and requires no additional side information to be transmitted to the decoder, unlike standard deadzone quantizers. The reconstructed images show a noticeable perceptual improvement as well as an increased PSNR relative to uniform quantization. 相似文献
46.
The present paper contributes in the discussion of heterogeneous gas/metal reactions by discussing the influence of the dew point (dp) during intercritical annealing on the sub‐surface constitution. Annealing trials with different Advanced High Strength Steels (AHSS) were carried out and the element distribution within the sub‐surface was analysed by glow discharge optical emission spectrometer (GD‐OES). For modelling purpose the gained element distribution data were adjusted in a way that the selective oxidation products were considered within the sub‐surface element profiles. Several transformation temperatures along the depth profiles according to the adjusted GD‐OES data have been computed for the dp ?30 °C and +5 °C. In all cases the according models have been implemented in Matlab. The thermodynamic data have been obtained via the Matlab‐ThermoCalc interface. Empirical equations have been applied for the determination of the bainite and martensite start temperatures. It is shown that the sub‐surface constitution and the transformation temperature differ significantly. In most cases the change of the transformation temperature within the surface and sub‐surface reaches up to 100 °C compared to the bulk. For a Dual‐Phase (DP) Steel with C(0.15%)Mn(1.7%)Al(1.7%)Cr(0.5%), the change of the Ae1‐temperature is with 300 °C significantly higher. However one has to keep in mind that the 2‐phase composition can not be assumed to be constant during intercritical annealing. It is therefore concluded that for the purpose of simulating the selective oxidation processes during intercritical annealing of AHSS the continuous change of the sub‐surface constitution must be incorporated in the future work. 相似文献
47.
AlGaN/GaN high electron mobility transistor (HEMT) device operation was modeled from the sub-micrometer scale to the substrate using a combination of an electro-thermal device model for the active device with realistic power dissipation within the device and a coupled three dimensional thermal model to account for the substrate. Temperatures for various points within a device were determined as a function of biasing conditions, substrate thickness and temperature, number of fingers, and gate length and pitch. As an example, we have used our model to show that life test results of industry-relevant devices can be significantly affected by the exact testing technique used. 相似文献
48.
Keller Jennifer; Nitschke Jack B.; Bhargava Tina; Deldin Patricia J.; Gergen John A.; Miller Gregory A.; Heller Wendy 《Canadian Metallurgical Quarterly》2000,109(1):3
The high comorbidity of depression and anxiety is well established empirically but not well understood conceptually, in terms of either psychological or biological mechanisms. A neuropsychological model of regional brain activity in emotion provides contrasting hypotheses for depression and anxiety, with depression associated with a relative decrease and anxiety with a relative increase in right-posterior activity. These hypotheses received support in a comparison of individuals diagnosed with depression and community controls, and also in a separate study of nonpatients administered a measure of perceptual asymmetry. Hierarchical regressions revealed that depression and anxiety were uniquely and jointly associated with perceptual asymmetry. In light of consistent empirical support for the model, implications for conceptualizations of the comorbidity of depression and anxiety are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
49.
Zeynep Atamer Jochen Dietrich Horst Neve Knut J. Heller Jörg Hinrichs 《International Dairy Journal》2010,20(6):408-414
The thermal resistances of the Lactococcus lactis phages P008 (a heat-sensitive wide-spread phage) and P680 (a heat-resistant phage) suspended in milk and in solutions supplemented with milk components were studied to elucidate the protective role of milk on phage inactivation. For both phages a decrease of inactivation was observed in casein solution. Furthermore, the inactivation kinetics of the phages in whey, in whey cream (3.5%, 20%, 30% fat) and in whey protein concentrate (0.7%, 5%, 10% protein) were tested. The inactivation experiments in whey cream and in whey protein concentrate having different concentrations of fat and protein revealed that fat had no influence on the inactivation, while, in contrast, the presence of protein had a protective effect. 相似文献
50.