RI/VI联用测定聚乙烯相对分子质量及其分布

150℃测试温度下，以1，2，4-三氯苯为溶剂，采用示差折光指数器，毛细管黏度计双检测器联用凝胶渗透色谱技术测定了聚乙烯的相对分子质量及其分布。与常规凝胶渗透色谱法对比，该方法不仅能直接得到聚乙烯较精确的相对分子质量和分布形态，同时可以得到聚乙烯的特性黏数分布。     

新会计准则对会计准则质量的影响

年初,国家财政部发布了新的会计准则,这是中国会计准则建设史上的重大事件。新会计准则体现出会计准则质量的几个重要标准,提高了中国会计准则的质量。同时,分析新会计准则质量方面仍存在的一些不足。     

催化精馏合成N-异丙基苯胺

在Joback基团贡献法估算反应的G ibbs函数的基础上,得到了异丙醇与苯胺合成N-异丙基苯胺的平衡常数与反应温度的关系式。研究了回流比、异丙醇与苯胺的摩尔比、塔釜操作温度、苯胺进料口位置距塔顶的距离对异丙醇与苯胺催化精馏合成N-异丙基苯胺的影响,确定了适宜的工艺条件:回流比2.5~3.5、异丙醇与苯胺的摩尔比1.5、塔釜操作温度223℃、苯胺进料口位置距塔顶300~400mm。在优化条件下,苯胺的转化率可达到99%,N-异丙基苯胺的选择性可达到99.5%,N-异丙基苯胺的质量分数可稳定在98.8%以上。     

Analysis and architecture design of variable block-size motion estimation for H.264/AVC

Variable block-size motion estimation (VBSME) has become an important video coding technique, but it increases the difficulty of hardware design. In this paper, we use inter-/intra-level classification and various data flows to analyze the impact of supporting VBSME in different hardware architectures. Furthermore, we propose two hardware architectures that can support traditional fixed block-size motion estimation as well as VBSME with less chip area overhead compared to previous approaches. By broadcasting reference pixel rows and propagating partial sums of absolute differences (SADs), the first design has the fewer reference pixel registers and a shorter critical path. The second design utilizes a two-dimensional distortion array and one adder tree with the reference buffer that can maximize the data reuse between successive searching candidates. The first design is suitable for low resolution or a small search range, and the second design has advantages of supporting a high degree of parallelism and VBSME. Finally, we propose an eight-parallel SAD tree with a shared reference buffer for H.264/AVC integer motion estimation (IME). Its processing ability is eight times of the single SAD tree, but the reference buffer size is only doubled. Moreover, the most critical issue of H.264 IME, which is huge memory bandwidth, is overcome. We are able to save 99.9% off-chip memory bandwidth and 99.22% on-chip memory bandwidth. We demonstrate a 720-p, 30-fps solution at 108 MHz with 330.2k gate count and 208k bits on-chip memory.     

Effects of genotype and treatment on the antioxidant activity of sweet potato in Taiwan

Six genotypes of sweet potato commercially available in Taiwan, including TNG57, TNG66, TNG68, TYY1, RP and WP, were used as samples in this study of the effects of steaming and kneading with pre-steaming treatments on the antioxidant components and antioxidant properties of methanolic extracts. Steam treatment increased the total phenols contents of all genotypes (2–13 times), flavonoids content of RP (1.3 times) and anthocyanins contents of RP and WP (5–6 times). Steam treatment also increased the reducing power and scavenging DPPH radical effect of sweet potato flours. For the methanolic extracts of steamed and kneaded flours, reducing powers were 0.02–1.70 at 5.0 mg ml⁻¹ and the scavenging effects on DPPH radicals were 19–92% at 2.5 mg ml⁻¹. Both showed the order of RP > WP > TYY1 and TNG66 > TNG57 and TNG68. However, the chelating effect of the six genotypes at 1.0 mg ml⁻¹ ranged from 50% to 73%. Contents of total phenols, flavonoids, and anthocyanins of sweet potato flours were significantly positively correlated with the reducing power and scavenging DPPH radical effects. After steaming and kneading treatments, RP showed the highest increase in the contents of total phenols, flavonoids and anthocyanins among the six genotypes studied.     

防水卷材空铺法的改进应用

防水巷材空铺法相对于满粘法，更能适应基层变形而避免拉裂渗水，更能适应基层潮湿的施工备件。通过工程应用实例．介绍了保证防水施工质量的技术措施，并证明空铺法具有提高防水质量、缩短工期、降低成本等优点。     

实验室的质量监督(上)

质量监督是实验室保持人员能力,进行自我完善,日常渐进的重要手段,是持续改进的重要组成部分,也是实验室管理工作的难点,本文给出质量监督的目的、对象、方法、记录等.     

"十一五"规划国家级重点通信项目

《信息产业科技发展“十一五”规划》提出设立部分重大项目,力争实现重点突破,形成一批具有自主知识产权的核心技术和创新产品,打造较为完整的产业链,形成世界一流的产业群。这其中,与通信相关的重点项目主要有:宽带无线移动通信、下一代网络、家庭网络、智能终端、数字电视等。本部分将对我国在以上领域的现状、项目的具体内容和目标、实现这些目标的具体计划以及相关厂商在各领域的努力和成绩进行介绍。     

Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing

A cost-effective technique was introduced to prepare ultrathin aluminum oxide (Al/sub 2/O/sub 3/) gate dielectrics with equivalent oxide thickness (EOT) down to 14 /spl Aring/. Al/sub 2/O/sub 3/ was fabricated by anodic oxidation (anodization) of ultrathin Al films at room temperature in deionized water and then furnace annealed at 650/spl deg/C in N/sub 2/ ambient. Both dc and dac (dc superimposed with ac) anodization techniques were investigated. Effective dielectric constant of k/spl sim/7.5 and leakage current of 2-3 orders of magnitude lower than SiO/sub 2/ are observed. The conduction mechanism in Al/sub 2/O/sub 3/ gate stack is shown to be Fowler-Nordheim (F-N) tunneling. Saturated current behavior in the inversion region of MOS capacitor is observed. It is found that the saturation current is sensitive to interface state capacitance and can be used as an efficient way to evaluate the Al/sub 2/O/sub 3/ gate stack/Si-substrate interfacial property. An optimal process control for preparing Al/sub 2/O/sub 3/ gate dielectrics with minimized interface state capacitance via monitoring the inversion saturation current is demonstrated.