双频容性耦合等离子体相分辨发射光谱诊断

采用相分辨发射光谱法, 对双频容性耦合纯Ar和不同含O₂量的Ar-O₂混合气体放电等离子体的鞘层激发模式进行了探究. 在射频耦合电源上极板的鞘层区域处观察到两种电子激发模式: 鞘层扩张引起的电子碰撞激发模式和二次电子引起的电子碰撞激发模式; 并发现这两种激发模式均受到低频射频电源周期的调制. 在纯Ar放电等离子体中, 两种激发模式的激发轮廓相似; 而在Ar-O₂混合气放电等离子体中, 随着含O₂量的增加, 二次电子的激发轮廓变弱. 此外, 利用相分辨发射光谱法对不同含O₂量的Ar-O₂混合气放电下Ar的 750.4 nm谱线的平均低频电源周期轴向分布进行了研究, 得到了距耦合电源上极板约3.8 mm处为双频容性耦合射频等离子体的鞘层边界. 关键词： 双频容性耦合等离子体 等离子体鞘层 发射光谱     

Review of relaxation oscillations in plasma processing discharges

Relaxation oscillations due to plasma instabilities at frequencies ranging from a few Hz to tens of kHz have been observed in various types of plasma processing discharges. Relaxation oscillations have been observed in electropositive capacitive discharges between a powered anode and a metallic chamber whose periphery is grounded through a slot with dielectric spacers. The oscillations of time-varying optical emission from the main discharge chamber show, for example, a high-frequency (\sim 40~kHz) relaxation oscillation at 13.33Pa, with an absorbed power being nearly the peripheral breakdown power, and a low-frequency ( \sim 3 Hz) oscillation, with an even higher absorbed power. The high-frequency oscillation is found to ignite plasma in the slot, but usually not in the peripheral chamber. The kilohertz oscillations are modelled using an electromagnetic model of the slot impedance, coupled to a circuit analysis of the system including the matching network. The model results are in general agreement with the experimental observations, and indicate a variety of behaviours dependent on the matching conditions. In low-pressure inductive discharges, oscillations appear in the transition between low-density capacitively driven and high-density inductively driven discharges when attaching gases such as SF₆ and Ar/SF₆ mixtures are used. Oscillations of charged particles, plasma potential, and light, at frequencies ranging from a few Hz to tens of kHz, are seen for gas pressures between 0.133 Pa and 13.33 Pa and discharge powers in a range of 75--1200 W. The region of instability increases as the plasma becomes more electronegative, and the frequency of plasma oscillation increases as the power, pressure, and gas flow rate increase. A volume-averaged (global) model of the kilohertz instability has been developed; the results obtained from the model agree well with the experimental observations.     

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH₄ and H₂ as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.     

时间分辨原子发射光谱诊断脉冲放电气体束等离子体

建成了一套脉冲放电气体束和原子发射光谱等离子体诊断实验装置,利用这套实验装置测量了不同放电条件下等离子体的时间分辨发射光谱,并采用玻尔兹曼作图法和Hα谱线斯塔克展宽法研究了等离子体的原子温度、离子温度和自由电子密度等参数的演化。实验结果表明,脉冲放电的总电量对等离子体参数的演化有较大影响;脉冲放电气体束等离子体中的离子温度远高于原子温度,自由电子密度相对较低,等离子体处于非局域热平衡状态。A special designed pulsed discharge nozzle (PDN) ion source and a plasma diagnostics system based on the atomic emission spectroscopy were constructed. The time-resolved emission spectra of Argon atoms and ions in the region of 300-800 nm were observed and analyzed. The plasma temperatures, including atomic and ionic temperatures, were simulated by Boltzmann plot method, and the free electron density was simulated through the Stark broadening of Hα line. The evolution of these plasma parameters were investigated by high-resolution time-resolved emission spectra. The results show that the total energy struck on the pulsed gas beam is the most important factor which determines the plasma properties and its evolution. The plasma in PDN is concluded into non-local thermodynamic equilibrium (non-LTE) during the evaluation because of the low electron density and the big difference between the temperatures of Argon atoms and ions in all discharge conditions.     

Spatial variation behaviors of argon inductively coupled plasma during discharge mode transition

A Langmuir probe and an ICCD are employed to study the discharge mode transition in Ar inductively coupled plasma. Electron density and plasma emission intensity are measured during the E (capacitive discharge) to H (inductive discharge) mode transitions at different pressures. It is found that plasma exists with a low electron density and a weak emission intensity in the E mode, while it has a high electron density and a strong emission intensity in the H mode. Meanwhile, the plasma emission intensity spatial (2D image) profile is symmetrical in the H mode, but the 2D image is an asymmetric profile in the E mode. Moreover, the electron density and emission intensity jump up discontinuously at high pressure, but increase almost continuously at the E to H mode transition under low pressure.     

Transition of Discharge Mode of a Local Hollow Cathode Discharge

The discharge characteristics of hollow cathode discharge in argon in a cylindrical cavity are investigated experi- mentally. The voltage-current （V - I） characteristics and the light emission are measured. It is found that the discharge plasma is localized inside the hollow cavity, with an extensive Faraday dark space between the cathode and the anode. The discharge develops from predischarge to abnormal glow discharge, the hollow cathode effect （HCE） and a hybrid mode as the discharge current increases. The onset of the HCE is found for the first time by the transition from abnormal glow discharge together with a significant decrease in the slope of the V - I curve which shows a positive differential resistivity. The voltage increases proportionally with the current when the HCE is reached.     

Spatial characteristics of nanosecond pulsed micro-discharges in atmospheric pressure He/H2O mixture by optical emission spectroscopy

Atmospheric pressure micro-discharges in helium gas with a mixture of 0.5%water vapor between two pin electrodes are generated with nanosecond overvoltage pulses.The temporal and spatial characteristics of the discharges are investigated by means of time-resolved imaging and optical emission spectroscopy with respect to the discharge morphology,gas temperature,electron density,and excited species.The evolution of micro-discharges is captured by intensified CCD camera and electrical properties.The gas temperature is diagnosed by a two-temperature fit to the ro-vibrational OH(A²Σ⁺–X^П(2),0–0)emission band and is found to remain low at 425 K during the discharge pulses.The profile of electron density performed by the Stark broadening of Ha 656.1-nm and He I 667.8-nm lines is uniform across the discharge gap at the initial of discharge and reaches as high as 10²³m^-3.The excited species of He,OH,and H show different spatio-temporal behaviors from each other by the measurement of their emission intensities,which are discussed qualitatively in regard of their plasma kinetics.     

LIF diagnostics of hydroxyl radical in a methanol containing atmospheric-pressure plasma jet

In this paper, a pulsed-dc CH_3OH/Ar plasma jet generated at atmospheric pressure is studied by laser-induced fluorescence(LIF) and optical emission spectroscopy(OES). A gas–liquid bubbler system is proposed to introduce the methanol vapor into the argon gas, and the CH3OH/Ar volume ratio is kept constant at about 0.1%. Discharge occurs in a 6-mm needle-to-ring gap in an atmospheric-pressure CH_3OH/Ar mixture. The space-resolved distributions of OH LIF inside and outside the nozzle exhibit distinctly different behaviors. And, different production mechanisms of OH radicals in the needle-to-ring discharge gap and afterglow of plasma jet are discussed. Besides, the optical emission lines of carbonaceous species, such as CH, CN, and C_2 radicals, are identified in the CH_3OH/Ar plasma jet. Finally, the influences of operating parameters(applied voltage magnitude, pulse frequency, pulsewidth) on the OH radical density are also presented and analyzed.     

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

This paper used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The results show that all the deposition parameters (methane concentration, substrate temperature, gas flow rate and ratio of H₂/Ar) could strongly influence the gas phase. C₂ is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C₂ and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C₂ is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.     

Nonclassical Properties in the Resonant Interaction of a Three Level A-type Atom with Two-mode Coherent state

A potential scheme is proposed to deterministically generate complete sets of entangled photons in the context of cavity quantum electrodynamics （QED）. The scheme includes twice interactions of atoms with cavities, in which the first interaction is made in two-mode optical cavities and the second one exists in a microwave cavity. In the optical cavities the atoms are resonant with the cavity modes, while the detuned interaction of the atoms with a singlemode of the microwave cavity is driven by a classical field. The favorable features of our scheme include ： （ 1 ） it is very straightforward in implementation because we carry out the scheme by only sending atoms through the cavities. The requirement for the implementation is very close to the reach of current cavity QED techniques. （2） The com- plete set of the entangled two- or more-photon states can be generated deterministically by our scheme, and the implementation time remains constant with the size of the entangled photon states. （3） Our scheme is more efficient than previous proposals with cavities, and the generated photons may be collected much more efficiently, due to cavities, than previous proposals by spontaneous emission.     

低温等离子体分解N2/O2/NO气氛中NO试验研究

利用自行设计的介质阻挡放电型低温等离子体反应器,研究了NO初始浓度、O₂初始浓度、放电功率、电源频率等因素对NTP转化N₂/O₂/NO气氛中NO的影响规律。研究发现,NO去除率随功率增大而升高,到达一最大值后随功率增大而降低;NO去除率随O₂初始浓度增加而降低,随NO初始浓度增大而减小。相同放电功率下,同一组分中NO去除率随电源频率的增加而降低,因此相同放电功率下降低电源频率可提高NO去除率。O₂初始浓度不高于5%时,NO_x大部分为NO,NO₂和O₃浓度均随放电功率增大而降低,NO₂、O₃生成量随O₂初始浓度升高而增多。     

细长金属管内产生的直流辉光等离子体发射光谱诊断

利用发射光谱法对金属管内形成的稳定氩氮直流辉光等离子体进行了诊断。通过对等离子体发射光谱谱线的研究确定了等离子体中的活性粒子成分;根据氩原子的玻尔兹曼曲线斜率法计算了等离子体中的电子激发温度;采用氮分子第二正带系跃迁(C3Π_u→B3Π_g)的发射谱线计算了等离子体中的氮分子振动温度;研究了电子激发温度和氮分子振动温度随压强的变化特征。研究结果表明,在20 Pa下产生的Ar60%+N₂40%直流辉光等离子体中,活性成分主要是Ar原子、Ar离子、N₂的第二正带系跃迁(C3Π_u→B3Π_g)和N+₂的第一负带系跃迁(B2Π+_u→X2Σ+_g);电子激发温度约为(15 270±250)K;氮分子(C3Π_u)振动温度约为(3 290±100)K;随着压强的增加电子激发温度、分子振动温度逐渐降低。文章的研究结果对细长金属管内表面改性研究具有重要的意义。     

介质阻挡放电中栅栏发光斑图等离子体参量研究

采用高速录像机和光谱仪,研究了在双水电极介质阻挡放电装置中首次得到的由长短交替的棒状放电结构组成的栅栏斑图。通过观察20 μs曝光录像照片发现栅栏斑图由体放电和沿面放电组成。采用发射光谱法,利用N₂第二正带系(C³Π_u→B³Π_g)的发射谱线和Ar Ⅰ(2P₂→1S₅)谱线的展宽,分别测量和比较了不同体放电和沿面放电不同位置处的分子振动温度和电子密度。结果发现:斑图中具有较强沿面放电的体放电比具有较弱沿面放电的体放电拥有较高的分子振动温度和电子密度;在沿面放电的方向上,沿面放电的分子振动温度和电子密度均逐渐降低。理论分析证明,壁电荷在狭缝内的非等量分布是影响栅栏斑图形成的主要因素。     

等离子体放电活化生理盐水杀菌应用研究

等离子体中含有多种活性物种可实现高效安全杀菌,活性物种与生物体相互作用多在水环境下进行.因此等离子体与水的相互作用过程研究掀起了等离子体生物杀菌的新浪潮.本文采用水中阵列放电产生等离子体活化生理盐水,利用所产生的活化生理盐水对大肠杆菌开展了杀菌消毒研究,当等离子体放电时间达到120 s时产生的活化生理盐水与大肠杆菌混合后可使大肠杆菌的存活效率降至0.001%.通过紫外-可见吸收光谱测量及化学氧化还原沉降滴定表明放电电荷及激发态氧化性活性物种与水溶液相互作用,转化为活化生理盐水中长寿命相对稳定存在的H_2O_2和O_3等氧化性物种,与大肠杆菌作用并主导主要杀菌效果.     

Ar/CH4等离子体射流发射光谱诊断研究

为了更加深入的研究大气压条件下Ar/CH₄等离子体射流的放电机理和其内部电子的状态,通过自主设计的针-环式介质阻挡放电结构,在放电频率10 kHz、一个大气压条件下产生了稳定的Ar/CH₄等离子体射流,并利用发射光谱法对其进行了诊断研究。对大气条件下Ar/CH₄等离子体射流的放电现象及内部活性粒子种类进行诊断分析,重点研究了不同氩气甲烷体积流量比、不同峰值电压对大气压Ar/CH₄等离子体射流电子激发温度、电子密度以及CH基团活性粒子浓度的影响规律。结果表明,大气压条件下Ar/CH₄等离子体射流呈淡蓝色,在射流边缘可观察到丝状毛刺并伴有刺耳的电离声同时发现射流尖端的形态波动较大;通过发射光谱可以发现Ar/CH₄等离子体射流中的主要活性粒子为CH基团,C,CⅡ,CⅢ,CⅣ,ArⅠ和ArⅡ,其中含碳粒子的谱线主要集中在400~600 nm之间,ArⅠ和ArⅡ的谱线分布在680~800 nm之间;可以发现CH基团的浓度随峰值电压的增大而增大,但CH基团浓度随Ar/CH₄体积流量比的增大而减小,同时Ar/CH₄等离子体射流中C原子的浓度随之增加,这表明氩气甲烷体积流量比的增大加速了Ar/CH₄等离子体射流中C-H的断裂,因此可以发现增大峰值电压与氩气甲烷体积流量比均可明显的加快甲烷分子的脱氢效率,但增大氩气甲烷体积流量比的脱氢效果更加明显。通过多谱线斜率法选取4条ArⅠ谱线计算了不同工况下的电子激发温度,求得大气压Ar/CH₄等离子体射流的电子激发温度在6 000~12 000 K之间,且随峰值电压与氩气甲烷体积流量比的增大均呈现上升的趋势;依据Stark展宽机理对Ar/CH₄等离子体射流的电子密度进行了计算,电子密度的数量级可达1017 cm-3,且增大峰值电压与氩气甲烷体积流量比均可有效的提高射流中的电子密度。这些参数的探索对大气压等离子体射流的研讨具有重大意义。     

Quantitative cleaning characterization of a lithium-fluoride iondiode

An ion source cleaning testbed was created to test plasma-cleaning techniques, and to provide quantitative data on plasma-cleaning protocols prior to implementation on the SABRE accelerator. The testbed was designed to resolve issues regarding the quantity of contaminants absorbed by the anode source (LiF), and the best cleaning methodology. A test chamber was devised containing a duplicate of the SABRE diode. Radio-frequency (RF) power was fed to the anode, which was isolated from ground and thus served as the plasma discharge electrode. RF plasma discharges in 1-3 mtorr of Ar with 10% O₂ were found to provide the best cleaning of the LiF surface. X-ray photoelectron spectroscopy (XPS) showed that the LiF could accrue dozens of monolayers of carbon just by sitting in a 2×10^-5 vacuum for 24 h. Tests of various discharge cleaning protocols indicated that 15 min of an Ar/O₂ discharge was sufficient to reduce this initial 13-45 monolayers of carbon impurities to 2-4 monolayers. Rapid recontamination of the LiF was also observed. Up to ten monolayers of carbon returned in 2 min after termination of the plasma discharge and subsequent pumping back to the 10^-5 torr range. Heating of the LiF also was found to provide anode cleaning. Application of heating combined with plasma cleaning provided the highest cleaning rates     

电负性气体的掺入对容性耦合Ar等离子体的影响

本文利用朗缪尔静电探针对掺入了电负性气体O₂, Cl₂, SF₆的由4068 MHz激发的单射频容性耦合Ar等离子体进行了诊断测量. 测量结果表明: 随着电负性气体流量的增加, 电子能量概率分布函数出现了高能峰, 高能峰且有向高能侧漂移的现象; 电负性气体掺入Ar等离子体后显著降低了等离子体的电子密度; 电子温度随着电负性气体流量比的增加而升高. 另外, 本文还测量了掺入三种电负性气体后在不同流量比下的混合气体等离子体的电负度α . 对实验现象进行了初步的解释. 关键词： 电负性等离子体 电子密度 电子温度 电负度     

大直径射流的放电特性及其等离子体参数和活性粒子分布的光谱诊断

大气压等离子体射流因其产生的等离子体羽富含活性粒子而在废水净化、元素探测、材料处理等方面具有良好的应用前景。通常等离子体羽的直径较小,限制了其工作效率。针对于此,利用交流电压激励大气压氩气等离子体射流,产生了直径约为14 mm的大尺度均匀等离子体羽。采用发射光谱法对电子密度和氧原子浓度随不同实验参数的变化关系进行了研究。光电测量结果表明,当外加电压峰值或氩气流量增加时,等离子体羽发光亮度增加。当电压峰值较低时,等离子体羽的上下游在电压的每个周期均有两个光脉冲信号,且上游光信号强度比下游的大。随着电压峰值增大,上下游等离子体羽的光信号强度都增大。当电压峰值较高时,上下游等离子体羽的光信号在每个电压周期呈现三个放电脉冲。不论每个电压周期放电脉冲数目多少,上下游等离子体羽的发光信号均具有同步性。利用光谱仪采集了300～800 nm范围内上下游等离子体羽的发射光谱,发现它们中均含有OH和N₂的谱线及ArⅠ和OⅠ谱线。其中,上游等离子体羽的ArⅠ谱线强度比下游的大,但OH和N₂的谱线强度比下游的小。利用谱线强度比对上、下游等离子体羽的电子密度进行了研究。结果表明,上游等离子体羽的电子密度在1014 cm-3量级,高于下游羽的电子密度（1013～1014 cm-3量级）。并且,上游和下游等离子体羽的电子密度均随外加电压峰值的升高而增加,随氩气流量的增加而增加。利用光化线强度法,研究了下游羽中氧原子浓度随实验参数的变化规律。结果表明,氧原子浓度沿气流方向降低;对于一个等离子体羽,平均而言氧原子浓度随外加电压峰值升高而增加,随氩气流量增加而增加。对于以上实验现象,利用气体放电的基本理论进行了定性解释。     

介质阻挡放电系统复合气隙中三种放电丝的光谱研究

介质阻挡放电系统（DBD）作为一个典型的非平衡气体放电系统,不仅在工业生产如低温等离子体生产和发光等方面被广泛应用,而且该系统表现出的非线性现象、自组织现象也吸引人们的关注。DBD系统中放电丝的等离子体参量受诸多因素影响,为了探究DBD系统的放电条件对等离子体参量的影响,该实验重新设计放电单元以保证在其他实验条件相同的情况下,对放电气隙间距和气体组分与等离子体参数之间的关系展开研究。本实验的放电单元为一个平板型玻璃框架气隙,该气隙由三个厚度均为1.2 mm,放电区域边长分别为40,30和20 mm的正方形玻璃框架复合而成,因此该放电气隙有三个放电区域,将此复合气隙放置于可调节气体成分和压强的真空室内,可以同时产生三种放电气隙间距分别为1.2,2.4和3.6 mm的等离子体放电丝。高速录像机拍摄的瞬时照片表明三种放电丝均为随机放电丝,即其放电类型均为流光放电。在垂直于放电气隙平面的方向设置光路,使用聚焦透镜获得清晰的成像,移动光纤探头实现空间分辨并采集数据。实验用光谱仪采集三种等离子体的氮分子第二正带系(C3Π_u→B3Π_u) 谱线,根据谱线强度计算得到各类放电丝的分子振动温度;利用谱线中包含的氮分子离子N+₂第一负带系谱线(391.4 nm)和氮分子第二正带系394.1 nm谱线强度的比值反应放电丝中电子平均能量;改变气室内氩气的含量,得到了三种等离子体的分子振动温度和电子平均能量的变化趋势。实验结果表明：在氩气含量0%~60%区间内,随着氩气含量的增加,三种等离子体的分子振动温度均先升高后降低,整体趋势表现为相同氩气含量下放电气隙间距越小分子振动温度越高,即1.2 mm气隙厚度中的放电丝的分子振动温度最高,2.4 mm气隙厚度次之,3.6 mm气隙厚度的最低;随氩气含量的增加放电丝的平均电子能量先升高后降低,氩气含量相同时气隙厚度越小的放电丝的电子平均能量越高,即1.2 mm气隙厚度中放电丝的电子平均能量最高,2.4 mm气隙厚度的次之,3.6 mm气隙厚度中的最低。实验结果对于研究DBD系统中等离子体参量、工业生产等方面具有重要的参考意义。