CdSxSe1-x玻璃的光双稳皮秒动力学特性研究

本文在掺CdS_xSe_1-x微晶阵列玻璃中观测到上升和下降时间为20微微秒的光学双稳跳跃过程,并从实验数据估算出CdS_xSe_1-x玻璃的三阶非线性系数为1×10^-8esu,与已报道用简并四波混频实验所测得的三阶非线性系数在数量级上一致,快速的光学双稳开关过程以及大的三阶非线性系数显示这种材料的光学双稳态是属于带填充效应的结果。     

掺CdSxSe1-x玻璃波导分布反馈光学双稳器件

本文给出了掺CdS_xSe_1-x玻璃平面波导分布反馈(DFB)光学双稳器件的设计和制备方法,实现了低功耗、快速的本征光学双稳。     

热电材料PbTe1-xSex的高压制备及电学性能研究

 利用高温高压技术,制备了热电材料PbTe和PbSe的固溶体合金PbTe_1-xSe_x,在室温下对其结构及电学性质进行了研究。X射线衍射（XRD）测试结果表明：PbTe_1-xSe_x具有NaCl结构;晶格常数随着Se含量（x）的增加而减小;PbTe_1-xSe_x的电阻率和Seebeck系数的绝对值随x的增大而减小;功率因子随x的增大先增大而后减小,当x=0.1时功率因子最高,达到21.7 μW/(cm·K²),比相同条件下制备的PbTe高20%。     

棱镜非线性波导耦合光学双稳器件

通过K/Na离子交换方法在掺CdS_xSe_1-x玻璃表面制成单模光波导,采用三种不同的光束耦合方式观测到了棱镜非线性波导耦合本征光学双稳态。     

Ti1-xCexO2体系纳米粉体的制备及其结构表征

 采用溶胶凝胶法制备了纳米Ti_1-xCe_xO₂系列样品。利用X射线衍射（XRD）、透射电子显微镜（TEM）、高分辨电子显微镜（HRTEM）对纳米Ti_1-xCe_xO₂系列样品颗粒尺寸、形貌以及固溶区范围和物相组成进行了研究；同时，采用Rietveld结构精修的方法研究了Ce的不同掺杂量对TiO₂晶体结构的影响。实验结果表明，Ce掺杂TiO₂能够形成Ti_1-xCe_xO₂固溶体，Ti_1-xCe_xO₂的固溶区范围在x=0～0.06之间，Ti_1-xCe_xO₂的晶粒度为5～10 nm，平均颗粒粒度约35 nm，且粒度均匀。     

Si1-xGex合金的红外透射光谱

本文报道了4.2～300K温度范围的富含Si的Si_1-xGe_x合金的晶格振动红外透射光谱.实验首次观察到Ge杂质诱发的一个新的共振模吸收.结果还表明,直拉法生长的Si_1-xGe_x合金存在严重的氧沾污,且氧的振动峰随温度的降低向高频方向移动.     

用近简并三波混频研究半导体掺杂玻璃的非谐振三阶非线性

用近简并三波混频实验方法对半导体CdS_0.4Se_0.6掺杂玻璃在非谐振透明区的三阶光学非线性进行了研究.该实验消除了由于双光子吸收光生载流子的非线性折射产生的五阶非线性效应,仅获得速度快的三阶光学非线性响应.研究结果表明,在非谐振透明区,CdS_0.4Se_0.6掺杂玻璃的三阶非线性极化率并不比它的基底玻璃大很多.量子尺寸效应没有有意义地提高掺杂玻璃中CdS_0.4Se_0.6微晶的三阶非线性极化率,即使较小激子吸收峰的出现也没有发现明显的变化.     

Sr1-xLaxTiO3的高温高压合成及XPS研究

 利用高温高压方法合成了有稀土元素La掺杂的钙钛矿氧化物Sr_1-xLa_xTiO₃。XRD测试表明，在x≤0.5时，样品基本为单相，呈立方相；晶胞体积随x的增加而增加，在x=0.4时开始减小。XPS测量发现，样品中存在Ti离子的变价。讨论了Ti离子价态的变化对晶格参数的影响。     

CdxHg1－xTe/SiO2固溶体微晶掺杂玻璃三阶非线性光学性质的

本文首次报道了对采用溶胶凝胶和原位生长工艺制备的Cd_xHg_1-xTe/SiO₂固溶体微品掺杂玻璃进行的三阶非线性光学性质实验研究及其结果。利用回返式简并四波混频技术,测得该固溶体掺杂玻璃的三阶非线性极化率的值为10^-12esu量级。此结果比纯SiO₂基体提高了2个数量级。表明该固溶体掺杂玻璃三阶非线性明显增强,在同样条件下,测得CS₂的三阶非线性极化率x⁽³⁾为(1.7±0.2)×10^-12esu,与国际上报道完全一致。     

常压烧结和高压合成Nd2-xCexCuO4的结构特征与导电性质

 本文在常压高温和高压高温条件下合成出了Nd_2-xCe_xCuO₄（x=0~0.20）系列样品，对比研究了两种不同条件下合成产物的结构特征与室温至液氮温区的导电性质。测试分析结果表明，高温高压（1.7 GPa，800 ℃，10 min）合成的样品与常压高温（1 000 ℃，10 h）烧结的样品具有相同的四方结构，但晶格常数随掺杂量变化有所不同，高压合成产物的c轴随掺杂量基本不变，而常压烧结样品c轴随掺杂量增加呈下降趋势。两种条件合成的样品在液氮温区均呈现出不同程度的半导体特征，经过一次高温淬火后处理后，高压样品的导电性质明显优于常压样品。实验结果表明，高压可以降低固相反应的合成温度，缩短反应时间，特别是高压的还原作用有利于产物导电性质的改善。     

CdS_xSe_（1－x）半导体微晶掺杂玻璃在抗共振环APM激光器中不能压窄脉

本文对具有较大非线性系数，较快非线性响应和回复时间的ＣｄＳ＿ｘＳｅ＿（１－ｘ）半导体微晶掺杂玻璃能否在挽共振环（亦称为非谐振环）ＡＰＭ激光器中有效地压缩脉宽等问题做了详尽的理论与实验的切耐与分析。理论计算与实验研究的结果均表明：在抗共振环ＡＰＭ激光器中，应用ＣｄＳ＿ｘＳｅ＿（１－ｘ）半导体微晶掺杂玻璃不能使超短光脉冲宽度被压窄．     

STUDIES ON THE DYNAMICS OF OPTICAL BISTABILITY SWITCHING IN THE INTERNAL FABRY-PEROT CAVITY WITH A CdSxSe1-x-DOPED GLASS CHANNEL WAVEGUIDE

We report the optical bistability in CdS_xSe_1-x-doped glass channel waveguide with rise and fall times of about 24 and 30ps, respectively, in bistable switching by means of fiber coupling input with a power of about 3mW. The third-order nonlinear susceptibility (x⁽³⁾) of CdS_xSe_1-x-doped glass is estimated experimentally to be 1.8×10^-9 esu. The high speed switching and the value of x⁽¹⁾ show that the optical bistability is caused by an optical nonlinearity which can be attributed to the band-filling effect.     

Linear and nonlinear optical properties of semiconductor particles

Abstract

The field of nonlinear optics is briefly introduced, followed by a review of quantum size effects in small semiconductor particles, with special reference to the linear and nonlinear optical properties. Experimental methods, especially the “laser induced grating” technique are described. Semiconductor (CdS _x Se_1?x ) doped glasses are examined, both the commercially available niters and a specially made experimental CdSe doped glass. Both linear and nonlinear optical properties are discussed. Colloidal and polymers systems are also briefly discussed.     

Studies on Structural,Morphological and Optical Properties of Chemically Deposited CdS<Subscript>1-x</Subscript>Se<Subscript>x</Subscript> Thin Films

The thin films of CdS_1-xSe_x were successfully deposited over glass substrates by chemical bath deposition technique. Cadmium acetate, thiourea and sodium selenosulfate were used as source materials for Cd²⁺, S^2? and Se^2? ions, while 2-mercaptoethanol was used as capping agent. The various deposition conditions such as precursor concentration, deposition temperature, pH and deposition time were optimized for the deposition of CdS_1-xSe_x thin films of good quality and the films were annealed at 200° and 300 °C. The structural, morphological, chemical and optical properties were examined by various characterization techniques and discussed in detail. The optical band gap of CdS_1-xSe_x thin film samples were estimated and found in the range from 2.11 to 1.79 eV for as-deposited and annealed thin films.     

Studies on growth and characterization of ternary CdS1−xSex alloy thin films deposited by chemical bath deposition technique

Ternary alloyed CdS_1−xSe_x thin films of variable composition ‘x’ were grown by the simple and economical chemical bath deposition technique. The as-grown thin films were characterized for structural, compositional, surface morphological, optical and electrical studies. The X-ray diffraction (XRD) patterns of the sample indicated that all the samples were polycrystalline in nature with hexagonal structure. Scanning electron microscopy (SEM) micrographs showed uniform morphology with spherical shaped grains distributed over entire glass substrate. EDAX studies confirmed that the CdS_1−xSe_x films were having approximately same stoichiometry initially as well as finally. Room temperature optical measurements showed that band gap engineering could be realized in CdS_1−xSe_x thin films via modulation in composition ‘x’. Electrical resistivity of CdS_1−xSe_x thin films for various compositions was found to be low. The broad and fine tunable band gap properties of ternary CdS_1−xSe_x thin films have potential applications in opto-electronic devices.     

非腔长匹配相干叠加脉冲锁模激光器的实验研究

实现了一种新型的非腔长匹配相干叠加脉冲锁模Ｎｄ：ＹＡＧ激光器的锁模运转。锁模脉冲宽度为６０ｐｓ．给出该种新型锁模激光器的运转特性以及锁模状态与各种实验参数之间的关系。对于该种激光器的各种实验现象给出了简明清晰的物理解释。     

A2B6 electric-discharge semiconductor focon laser

The working principle of the electric-discharge semiconductor focon laser is considered. CdS, Cd _x Zn_1?x Se, and CdS _x Se_1?x plates were used as active medium. In the case of CdS, lasing at λ = 525 nm was observed. The radiation power reached 3 kW, the pulse duration being 3 ns. The conditions of generation initiation in the streamer regime are considered. The spectral characteristics of discharge channel radiation in Cd _x Zn_1?x Se and CdS _x Se_1?x plates are investigated. The spectrum is shown to consist of discrete lines occurring upon discharge propagation and corresponding to the change in the composition of the ternary compound obtained in the course of single crystal growth. The application of ternary solid solutions A2B6 is supposed to help in obtaining a successive laser pulse generation within the range of 480 to 700 nm.     

Growth of oriented Pb(ZrxTi1-x)O3 thin films on glass substrates by pulsed laser deposition

Oriented crystalline Pb(Zr_xTi_1-x)O₃ (x=0.53) (PZT) thin films were deposited on metallized glass substrates by pulsed laser deposition (1060-nm wavelength Nd:YAG laser light, 10-ns pulse duration, 10-Hz repetition rate, 0.35-J/pulse and 25-J/cm² laser fluence), from a commercial target at substrate temperatures in the range 380-400 °C. Thin films of 1-3 7m were grown on Au(111)/ Pt/NiCr/glass substrates with a rate of about 1 Å/pulse on an area of 1 cm². The deposited PZT films with perovskite structure were oriented along the (111) direction, as was revealed from X-ray diffraction spectra. Fourier transform infrared spectroscopy (FTIR) was performed on different PZT films so that their vibrational modes could be determined. Piezoelectric d₃₃ coefficients up to 30 pC/N were obtained on as-deposited films. Ferroelectric hysteresis loops at 100 Hz revealed a remanent polarization of 20 7C/cm² and a coercive field of 100 kV/cm.