闪耀全息光栅离子束刻蚀工艺模拟及实验验证

依据特征曲线法推导了非晶体表面的离子束刻蚀模拟方程,结合全息光栅的刻蚀特点开发出离子束刻蚀模拟程序,并通过实验数据分析并优化了非晶体材料刻蚀速率与离子束入射角的关系方程,最后利用离子束刻蚀实验对所开发的离子束刻蚀模拟程序进行了实验验证.调节掩模与基底材料的刻蚀速率比为2∶1至1∶2,制作了线密度为1 200 1/mm,闪耀角为～8.6°,非闪耀角为34°～98°的4种闪耀光栅,与刻蚀模拟程序的结果进行对比,模拟误差＜5％;控制离子束刻蚀时间为6～14 min,制作了线密度为1 200 1/mm,闪耀角为～8.6°,顶角平台横向尺寸为0～211 nm的6种光栅,与刻蚀模拟程序的模拟结果进行对比,模拟误差＜1％.比较实验及离子束刻蚀模拟结果表明,离子束刻蚀模拟程序获得的模拟刻蚀轮廓曲线与实际刻蚀轮廓曲线的误差＜5％;模拟刻蚀截止点与实际刻蚀截止点误差＜1％.实验表明,提出的模拟方程可以准确地描述不同工艺过程和工艺参数对最终刻蚀结果的影响,进而可预知和控制离子束刻蚀过程.     

SnSe2薄膜的载流子与声子动力学研究

基于自建的超快抽运探测实验系统,研究了化学气相沉积法生长的SnSe₂薄膜的超快载流子与声子动力学。对SnSe₂薄膜随抽运能量密度变化的载流子弛豫过程的测量结果表明该薄膜具有超快的载流子热化过程和皮秒至纳秒时间尺度的复合过程。伴随着光生载流子的超快激发和能量弛豫,SnSe₂薄膜发生晶格热化,产生了特定频率的相干声学声子。通过分析声学声子振荡信号随抽运能量密度变化的规律,揭示了SnSe₂薄膜产生的相干声学声子的特性。研究结果对SnSe₂薄膜在光电器件领域的应用研究具有一定的参考价值。     

离子束刻蚀光学薄膜的速率定标技术

离子束刻蚀技术现在越来越多被应用在可见光乃至红外薄膜中,在这一技术中最为关键的环节就是如何精确地测量离子源对薄膜的刻蚀速率,此速率因不同材料不同工艺条件而变化。现在利用光谱测量与数据拟合的方法,能够快速简便地测定出被刻蚀的材料的物理厚度,从而标定离子束刻蚀的速率。     

大规模集成电路刻蚀过程和终点的在线监测──等离子发射光谱法

文章叙述了大规模集成电路(LSI)等离子和反应离子刻蚀原理及在线监测刻蚀过程的基本方法。详述了用等离子发射光谱法进行LSI离子刻蚀过程监测的具体实施和实验结果,得到了80Å的动态监测精度和0.3cm²的最小可监测面积。最后文章还讨论了影响监测精度的因素。     

LCD工艺中使用的碱性溶液对SiO2膜层的刻蚀作用

钠钙玻璃基片上的SiO₂膜层在很大程度上决定了液晶显示器件(LCD)的化学稳定性及使用寿命。本文以射频溅射法制备的SiO₂膜层为样品,结合LCD工艺特点,初步研究分析了其工艺流程中所使用的不同碱性溶液对SiO₂膜层不同的刻蚀作用。本文的结论有利于在LCD工艺中更好地保护SiO₂膜层。     

离子束加工光学镜面的材料去除特性

分析了离子束加工光学镜面的材料去除效率、加工损伤厚度以及表面热效应等材料去除评价指标。基于Sigmund溅射理论,分析了此三个评价指标与离子入射角度和离子能量等加工参数的关系,建立了相关模型。以石英玻璃为例,利用TRIM软件仿真离子溅射过程,分析理论模型各参数,具体研究了三个评价指标与离子能量和入射角度的关系。结果表明:材料去除效率随离子能量的增大而缓慢增大,随入射角度增大而显著增大,60°时的去除效率约为0°时的4.5倍;加工损伤厚度随离子能量增大而近似呈线性增大,随入射角度增大而减小;热效应随离子能量近似呈线性增大,而随入射角度增大而减小。因此,离子束加工工艺过程中,应尽量增大离子束入射倾角来同时提高这三方面的指标。     

推拉式小车法制备单层硒化钨薄膜

为了提升单层硒化钨（WSe₂）薄膜的制备质量，在传统化学气相沉积（CVD）法制备的基础上进行改进，通过引入推拉式小车来制备单层WSe₂薄膜，从而构造出可以调控沉积区域、精确控制生长时间，并可实现快速降温的生长方式。采用光学显微镜和原子力显微镜来表征制备材料的尺寸、荧光强度、形貌结构等特性，证明了利用推拉式小车法可成功制备出高质量的单层WSe₂薄膜。推拉式小车法可以稳定制备大面积、高质量、单层的WSe₂薄膜，为其在信息、能源、生物等前沿领域的应用提供参考。     

用CHF3/Ar为工作气体刻蚀融石英

报道了用氟利昂CHF₃和氩气Ar作工作气体的反应离子刻蚀融石英的技术。研究了气体流速、腔压和射频等离子体功率对刻蚀速度的影响,并分析了刻蚀工艺对样品表面的污染,同时也考察了刻蚀工艺的均匀性和重复性。为了优化刻蚀工艺,采用Rs1/Discover软件工具设计优化实验。实验中射频等离子体功率范围在120～160W,氩气和氟利昂流速分别在15～35sccm(1cm³/min standard cubic centimeter/minute)和20～50sccm范围,腔压在13～19Pa范围,相应的刻蚀速度为15～25nm/min.     

Ion beam etching of large aperture diffractive optical elements

总结了大尺寸衍射光学元件离子束刻蚀技术的研究进展.针对自行研制的KZ-400离子束刻蚀装置,提出了组合石墨束阑结构和多位置分步刻蚀策略来提高离子束刻蚀深度的均匀性,目前在450 mm尺寸内的刻蚀深度均匀性最高可达±1％.建立了针对多层介质膜光栅的衍射强度一维空间分布在线检测系统以及用于透射衍射光学元件离子束刻蚀深度的等厚干涉在线检测系统,实现了对大尺寸衍射光学元件离子束刻蚀终点的定量、科学控制,提高了元件离子束刻蚀工艺的成功率.利用上述技术,成功研制出一系列尺寸的多层介质膜光栅、光束采样光栅、色分离光栅以及同步辐射光栅等多种衍射光学元件.     

单价银离子在 CaO-P2O5 系统玻璃中的发光特性

在弱还原气氛下制备了单价银离子(Ag⁺)掺杂的CaO-P₂O₅系统玻璃,测试了其在室温下的吸收光谱、激发光谱和发射光谱。Ag⁺-CaO-P₂O₅玻璃的吸收光谱表明两个吸收峰。高能峰位于220nm波长,由4d¹⁰→4d⁹5P¹跃迁引起,低能峰中心位于240nm波长,归因于4d¹⁰→4d⁹5s¹跃迁,该吸收与其发射特性有关。紫外波段的宽带吸收产生了可见波段强烈的荧光发射,发光峰位于440nm波长,半宽度为130nm.研究了掺质浓度与发光特性的关系,随着掺质浓度的增加(0.05～0.25mol%),发光峰向较长波段移动。在Ag₂O含量为0.5mol%时,出现了浓度猝灭现象。为了比较起见,同时还研制了Cu⁺-CaO-P₂O₅及Cu⁺-Ag⁺-CaO-P₂O₅玻璃。     

Ultrastructural comparison of ion beam and radiofrequency plasma etching effects on biological tissue sections

Three dry etching techniques (Ar+ ion beam, O₂+ ion beam, O₂ radiofrequency electrodeless discharge) were compared with respect to preferential etching and damage to the ultrastructure of glutaraldehyde-fixed Epon-embedded frog skeletal muscle sections. SEM and TEM studies were performed on both unstained and stained (osmium tetroxide, uranyl acetate) sections. Etching effects were observed to differ for the various ion beam or plasma etching techniques. Whereas selective retention of electron dense structures (e.g. Z lines, nuclear heterochromatin) was observed for oxygen plasma etching, preferential etching of these components was observed using O₂+ ion beam bombardment. Selectively etched Z lines and etch-resistant nucleoli were observed for both reactive (O₂+) and inert (Ar+) ion beam sputtering after sufficiently high ion doses. The above suggest that selective etching under keV ion beam irradiation is related more to physical sputtering processes (momentum transfer) than to the chemical reactivity of the incident ion. Heavy metal post-fixation and staining had no qualitative effect on the nature of the selective etching phenomena. The above findings are significant in that they potentially influence both electron and ion microprobe measurements of etched biological specimens.     

用于1 m Seya-Namioka单色仪的 1 200 lp/mm Laminar光栅

针对国家同步辐射实验室燃烧与火焰实验站中1 m Seya-Namioka 单色仪对光栅的需求,采用全息离子束刻蚀工艺制作了1 200 lp/mm Laminar光栅。首先,通过光刻胶灰化技术调节光刻胶光栅掩模占空比,在理论设计的误差允许范围内,对此光栅掩模进行扫描离子束刻蚀;然后,将光栅图形转移到光栅基底中去除残余光刻胶;最后,采用离子束溅射法镀制厚约40 nm的金反射膜,采用热蒸发法镀制厚约60 nm的铝反射膜。用原子力显微镜分析光栅微结构,结果显示光栅槽深为40 nm,占空比为0.45。同步辐射在线波长扫描测试结果表明,镀铝光栅效率明显高于镀金光栅,获得的实验结果与理论计算结果基本符合。镀金光栅已替代进口光栅在线使用3 年,其寿命大大超过复制光栅,基本满足了燃烧实验站的实验研究需求。     

全息离子束摆动刻蚀凸面闪耀光栅制备技术

高衍射效率的凸面闪耀光栅是高光谱分辨率成像光谱仪的核心分光元件,其制作方法包括机械刻划法、电子束直写法、X射线光刻法、全息离子束刻蚀法等,其中全息离子束刻蚀法因为具备良好的各向异性,不受尺寸与曲面形状限制,杂散光低,完全没有鬼线,制造时间短等优点成为现今光栅制造领域常用方法之一。传统全息离子束刻蚀凸面光栅时基底的弯曲会导致槽形闪耀角的不一致性,并且在制作小闪耀角凸面光栅时基底表面会有部分区域无法被刻蚀和槽形曲面不连续的现象,而摆动刻蚀凸面闪耀光栅可以克服上述缺点。对全息离子束刻蚀方法制作凸面闪耀光栅多方面进行了综述。     

Stencil mask methodology for the parallelized production of microscale mechanical test samples

A new methodology to parallelize the production of micromechanical test samples from bulk materials is reported. This methodology has been developed to produce samples with typical gage dimensions on the order of 20-200 μm, and also to minimize the reliance on conventional focused ion beam fabrication methods. The fabrication technique uses standard microelectronic process methods such as photolithography and deep-reactive ion etching to create high aspect ratio patterned templates-stencil masks-from a silicon wafer. In the present work, the stencil mask pattern consists of a linear row of tensile samples, where one grip of each sample is integrally attached to the bulk substrate. Once fabricated, the stencil mask is placed on top of a pre-thinned substrate, and the pattern and substrate are co-sputtered using a broad ion beam milling system, which ultimately results in the transfer of the mask pattern into the substrate. The methodology is demonstrated using a Si stencil mask and a polycrystalline Ni foil to manufacture an array of metallic micro-tensile samples.     

大尺寸衍射光学元件的扫描离子束刻蚀

总结了大尺寸衍射光学元件离子束刻蚀技术的研究进展。针对自行研制的KZ-400离子束刻蚀装置,提出了组合石墨束阑结构和多位置分步刻蚀策略来提高离子束刻蚀深度的均匀性,目前在450mm尺寸内的刻蚀深度均匀性最高可达±1%。建立了针对多层介质膜光栅的衍射强度一维空间分布在线检测系统以及用于透射衍射光学元件离子束刻蚀深度的等厚干涉在线检测系统,实现了对大尺寸衍射光学元件离子束刻蚀终点的定量、科学控制,提高了元件离子束刻蚀工艺的成功率。利用上述技术,成功研制出一系列尺寸的多层介质膜光栅、光束采样光栅、色分离光栅以及同步辐射光栅等多种衍射光学元件。     

Homogenous and ultra-shallow lithium niobate etching by focused ion beam

Focused ion beam (FIB) milling has been used for fast prototyping of lithium niobate (LiNbO₃, LN) devices with feature size from sub-to hundreds of micrometers. However, a promising and challenging depth range of tens-of-nanometers or below is rarely attended. Moreover, the surface roughness, related closely with device performances, is particularly non-negligible for such an ultra-shallow etching. Here, the surface roughness evolution was studied on ultra-shallow FIB etched LN structures. It was found that the inhomogeneous etching of the metallic film, coated on LN surface to avoid charge accumulation, had a detrimental effect on the LN surface roughness control. By thinning the gold thickness to 7 nm, sub-nanometer surface roughness was reported for etching depth of several nanometers. This work paves the way towards a homogenous and ultra-shallow FIB milling of LN nano-structures.     

Improving the etching performance of high-aspect-ratio contacts by wafer temperature control: Uniform temperature design and etching rate enhancement

A novel wafer temperature control system using direct expansion cycles is developed to improve etching performance. This system enables rapid temperature control of a wafer with low power consumption. In a previous report, we confirmed that the etching rate and mask selectivity of high-aspect-ratio contact etching could be increased by around 6% and 14%, respectively, by controlling the temperature of the wafer during the etching process. In this study, an advanced wafer temperature control system that realizes not only rapid response but also uniform wafer cooling is developed, and a new etching process that controls O₂ gas flow rate as well as wafer temperature during etching is evaluated to decrease the etching rate depression of high-aspect-ratio contact etching. As a result, a rate of wafer temperature change of 1 °C/s and uniformity of ±0.7% with a coefficient of performance exceeding 3 is achieved over a wafer with a diameter of 300 mm during the etching process. Furthermore, etching rate depression in C₄F₆/Ar/O₂ plasma is decreased from 14.4% to 7.8% for a sample with a diameter of 100 nm and aspect ratio of 30.     

原子力显微镜传感器的微机械加工技术的研究

分析了现有的AFM力传感器的工艺特点及问题。在此基础上研究用KOH溶液两步法P+自停止腐蚀制作厚度精确可控的单晶硅悬臂梁;以SiO2为掩模,SF6刻蚀硅,用RIE与各向同性湿法化学腐蚀相结合使悬臂梁探针一次成形和用湿法腐蚀锐化探针,针尖半径约50nm.制定了适于批量生产的AFM力传感器加工工艺。     

Numerical study on the low density gas flows in a plasma etch reactor

The direct simulation Monte Carlo method is employed to predict the etch rate distribution on Al wafer for a chlorine feed gas flow. The etching process of an Al wafer in a plasma etch reactor is examined by simulating molecular collisions of reactant and product. The surface reaction on the Al wafer is simply modelled by one-step reaction: 3Cl₂+2Al → 2AlCl₃. The gas flow inside the reactor is compared for six different nozzle locations. The present numerical results show that the etch rate increases with the mass flow rate of source gas Cl₂. It is also shown that the flow field inside the reactor is significantly affected by the nozzle locations.