Nickel Enriched Diffusion Layers on a NiAl Alloy

The intermetallic phase NiAl is a perspective material for high-temperature and shape memory effect applications. Formation of Ni₅Al₃, Ni₂Al, Ni₃Al phases which influence the extent of martensitic transformation in NiAl have been studied up to now with controversial results. We have investigated (using SEM and local elemental analyses) the microstructure of nickel enriched surface layers on a Al-79 wt.% Ni alloy. The layers were prepared by diffusion annealing and subsequently given two different heat treatments: at 930°C outside the Ni₅Al₃ region and at 500°C within the Ni₅Al₃ region of the phase diagram. In the specimen which was only diffusion annealed separate islands of Ni₅Al₃ phase elongated in the direction of the concentration gradient could be recognized within the nickel enriched surface layer. In the samples additionally annealed at 500°C, a well defined continuous layer of the Ni₅Al₃ phase situated 0.4 mm below the specimen surface was found. In the samples annealed at 930°C, isolated Ni₃Al precipitates were observed. Their number and size gradually increased with increasing nickel content.     

Processing, microstructure and properties of C40 Mo(Si,Al)2/Al2O3 composites

The C40 Mo(Si_0.75Al_0.25)₂/Al₂O₃ composites were prepared by spark plasma sintering (SPS) of mechanically alloyed (MA) powders. The Mo(Si_0.75Al_0.25)₂/0–20 vol.% Al₂O₃ materials, showing micron and submicron composite structure, possess a hardness of 13.9–14.6 GPa but a poor toughness of 1.78–1.80 MPa m^1/2. The addition of 30 vol.% Al₂O₃ leads to the formation of the micron C40 Mo(Si_0.75Al_0.25)₂/Al₂O₃ composite with an intergranular distribution of Al₂O₃, that results in a drop of the hardness to 10.2 GPa and an improvement of the toughness to 3.67 MPa m^1/2. The transition of the cleavage facets to the intergranular fracture with the addition of Al₂O₃ is assumed as the main toughening mechanism.     

Long lasting phosphorescence of Sr4Al14O25:Eu,Dy thin films by magnetron sputtering

This paper reports the preparation process and the long lasting phosphorescence of the Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ thin films obtained by magnetron sputtering. Phosphorescence was achieved by annealing the films in reducing atmosphere. Sr₄Al₁₄O₂₅ thin film was obtained when the films were treated at 1200 °C, while SrAl₂O₄ was generated as the intermediate phase during the annealing process. Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ film generated an emission at 485 nm, and SrAl₂O₄:Eu²⁺,Dy³⁺ film showed an emission peaking at 515 nm. Afterglow characteristics were observed for both films, and Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ film showed a better afterglow property than the SrAl₂O₄:Eu²⁺,Dy³⁺ film due to a deeper trap level and a higher trap concentration formed in the thin films.     

热处理对Ni-P-A12O3化学复合镀层摩擦磨损性能的影响

热处理可显著提高镀层的硬度和耐磨性能。采用化学镀的方法在45钢表面制备了Ni-P-纳米A12O3复合镀层,并以不同温度对其热处理,研究了镀层热处理前后的物相、硬度和耐磨性能。结果表明：400℃热处理后,Ni-P-A12O3复合镀层达到稳态,稳定相是Ni＋Ni3P＋NiO＋A12O3;镀层的显微硬度随热处理温度的升高而先...     

光悬浮区熔定向凝固Al2O3/Er3Al5O12和Al2O3/Yb3Al5O12共晶陶瓷的制备与性能研究

本研究探索了光悬浮区熔法制备Al₂O₃/Er₃Al₅O₁₂(ErAG)和Al₂O₃/Yb₃Al₅O₁₂(YbAG) 定向凝固共晶陶瓷。在10 mm/h的抽拉速率下成功获得了凝固组织均匀、内部无裂纹或孔洞的高质量共晶陶瓷。通过高分辨三维X射线衍射仪研究了Al₂O₃和RE₃Al₅O₁₂在三维空间的分布与组织结构; 利用电子背散射衍射技术分析了定向凝固末期Al₂O₃和RE₃Al₅O₁₂两相的晶体学择优取向和相界面关系。力学性能表征结果显示, Al₂O₃/ErAG和Al₂O₃/YbAG具有优异的力学性能, 二者的维氏硬度分别为(13.5±0.4)和(12.8±0.1) GPa;断裂韧性分别为(3.0±0.2)和(3.2±0.1) MPa·m^1/2。     

Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering

The Yb:Er co-doped Al₂O₃ thin film was deposited on oxidized silicon wafers by microwave ECR plasma source enhanced RF magnetron sputtering, and annealed from 800 °C to 1000 °C. The photoluminescence at 1.53 μm of thin film was obtained under room temperature. The mixture phase structure of γ and θ is observed by XRD, and the compositions of the thin film are investigated by EPMA. The maximum PL intensity was achieved with O₂:Ar at 1:1, annealing temperature at 900 °C, and experimental ratio of Yb:Er at 1:3.6. The energy transfer mechanism between Er and Yb ions is supported by theoretical analysis and experiment results.     

Chemical stability, microstructure and mechanical behavior of LaPO4-containing ceramics

The use of LaPO₄ as a weak interface in composites for high temperature applications was investigated using tape-cast laminates and fiber model systems. Three laminates were fabricated with LaPO₄ as one component and Al₂O₃, Y₃Al₅O₁₂ or LaAl₁₁O₁₈ as the other. The chemical compatibility between the different components of the laminates, as well as the mechanical responses to flexural deformation and the propagation of indentation cracks, were examined. Two fiber model systems (Al₂O₃ fiber/LaPO₄ coating/Al₂O₃ matrix and Y₃Al₅O₁₂ fiber/LaPO₄ coating/Al₂O₃ matrix) were studied by fiber pushout tests to measure the interfacial shear strengths. The interfacial shear strengths were calculated by the linear and shear-lag approaches for different embedded fiber lengths. The results suggest that Y₃Al₅O₁₂ fiber-reinforced composites with LaPO₄ coatings have potential as high temperature materials in oxidizing environments.     

FABRICATION OF A Ni3Al/Al2O3UNIDIRECTIONAL COMPOSITE BY PRESSURE CASTING

A gas pressure liquid metal infiltration technique for producing fiber reinforced Ni₃Al/Al₂O₃ and Ni₃Al/Al₂O₃ composites has been described. Composite bars of 9.5 mm diameter, 150 mm long were produced. It was found necessary to add 0.5 at.%Ti to both Ni₃Al and NiAl alloys to obtain adequate wetting. There was a strong tendency for liquid metal infiltration along one side of the fibers causing a shift of the fibers to the opposite side. No interface reaction zone was observed at optical magnifications up to 1000X. A composite of Ni₃Al containing 33 volume percent of FP fibers fractured at 890 MPa which is approximately 3 times the yield strength of the matrix IC-50(21.73A1-0.34Zr-0.IB-Balance Ni at.%) + 0.5 at. %Ti.     

Grain growth mechanisms in a spray-formed Ni3Al/Al2O3 composite in the presence of a liquid phase

Grain growth in the two-phase (liquid + solid) region of Ni₃Al reinforced with 0.8 vol.% Al₂O₃ participates synthesized by a spray atomization and co-injection technique was investigated. The grain growth of the as-sprayed and hot isostatically pressed (HIPed) materials in the two-phase region was found to be consistent with cube law kinetics, i.e., grain growth exponent was approximately 3. The activation energy for grain growth for the as-sprayed material was determined to be 308 ± 19 kJ mol⁻¹ while that of the HIPed material was calculated to be 327 ± 23 kJ mol⁻¹. The activation energy for grain growth was not a function of the amount of liquid phase or the composition of the liquid. Furthermore, the activation energy for grain growth was higher than that for diffusion through the liquid phase, suggesting that the mechanism for grain growth of the as-sprayed and HIPed Ni₃Al composite in the two-phase region was controlled by an interface reaction. The role of the second-phase Al₂O₃ particles on grain growth for the as-sprayed and HIPed Ni₃Al materials was not significant.     

氟化镁基底上HfO2中间层对Al2O3薄膜微观组织和力学性能的影响

采用电子束蒸镀技术在氟化镁基底上制备了单层Al₂O₃薄膜和含有HfO₂中间层的HfO₂/Al₂O₃双层薄膜。在空气中对所制备的薄膜进行1 h 600℃的退火处理。通过掠入角X射线衍射仪(GIXRD)、场发射扫描电镜(FE-SEM)、傅里叶变换红外光谱仪(FTIR)、纳米压痕和划痕法对薄膜的微观结构、红外透过率和力学性能进行了表征。结果表明: 退火处理后HfO₂/Al₂O₃双层薄膜中形成了一层树枝状的新层, 这种新层的硬度大于17.5 GPa。这种高硬度的新层能够保护氟化镁基底不被划伤。从GIXRD图谱中只能找到单斜相HfO₂的衍射峰, 而Al₂O₃薄膜仍然保持非晶态。从这些结果中可以推断出HfO₂从非晶态向单斜相的转变促进了这种树枝状新层的产生, 也正是这种新层提高了保护薄膜的力学性能。     

Controllable formation of Er–Yb codoped Al2O3 films by the non-aqueous sol–gel method

1 mol%Er³⁺–10 mol%Yb³⁺ codoped Al₂O₃ thin films have been prepared on thermally oxidized SiO₂/Si(110) substrates by a dip-coating process in the non-aqueous sol–gel method from the hydrolysis of aluminum isopropoxide [Al(OC₃H₇)₃] under isopropanol environment. Addition of N,N-dimethylformamide (DMF) as a drying control chemical additive (DCCA) into the sol suppresses formation of the cracks in the Er³⁺–Yb³⁺ codoped Al₂O₃ thin films when the rare-earth ion is doped with a high doping concentration. Homogeneous, smooth and crack-free Er³⁺–Yb³⁺ codoped Al₂O₃ thin films form at the conditions by a molar ratio of 1:1 for DMF:Al(OC₃H₇)₃. A strong photoluminescence spectrum with a broadband extending from 1.400 to 1.700 µm centered at 1.533 µm is obtained for the Er³⁺–Yb³⁺ codoped Al₂O₃ thin films, which is unrelated to the addition of DMF. Controllable formation of the Er³⁺–Yb³⁺ codoped Al₂O₃ thin films may be explained by the fact that the DMF assisted the deprotonation process of Al–OH at the surfaces of gel particles, resulting in enhancement of the degree of polymerization of sols and improvement of the mechanical properties of gel thin films.     

The influence of substrate chemistry on the adhesion of electrolessly deposited Ni(P) on metal oxide coated ceramics

The adhesion of electrolessly deposited Ni(P) on alumina ceramic substrates which were coated with thin SiO₂, SnO₂, TiO₂, Al₂O₃, Y₂O₃, ZrO₂ and (In,Sn)O_x (ITO) films was studied. The adhesion was measured with the aid of the 90° peel test. Strong adhesion of Ni(P) was found for the substrates with ZrO₂ and Al₂O₃ coatings and weak adhesion for the substrates with SiO₂, TiO₂, SnO₂, Y₂O₃ and ITO coatings. The fracture path and the type of interfacial bonding were analysed using scanning electron microscopy, energy-dispersive analysis of X-rays and X-ray photoelectron spectroscopy. In the case of the strongly adhering samples, fracture took place through the metal layer and along the interface. In the case of the weakly adhering samples only interfacial failure was observed between the Ni(P) layer and the metal oxide coating. Cross-section transmission electron microscopy studies of the interfaces suggested that the differences in peel energy values are caused by differences in micromechanical interlocking at the metal oxide-Ni(P) interface. In addition, a weak boundary layer which was found to be present at the Ni(P)-alumina interface was absent in the case of the strongly adhering samples with the ZrO₂ substrate coating.     

Cr~（3＋）离子掺杂对Al_2O_3粉末结构及发光性能影响

采用球磨法制备了不同浓度Cr_2O_3掺杂的Al_2O_3粉体,并在700℃、1200℃空气中退火2 h。1200℃退火后样品,除掺杂浓度为1.6%的样品中出现少量γ-Al_2O_3相外,其余样品相均为纯α-Al_2O_3。样品晶格常数随着Cr~（3＋）离子浓度的增加而增加。采用波长为579 nm的激发光源对佯品进行荧...     

Investigation of thermal stability, phase formation, electrical, and microstructural properties of sputter-deposited titanium aluminide thin films

Titanium aluminide thin films are being considered as coating materials for high temperature applications due to their high melting points and high oxidation resistance. In this study, Ti₃₇Al₆₃ and Ti₅₃Al₄₇ thin films are deposited onto SiO₂ substrates by RF magnetron sputtering using compound targets and then annealed in vacuum to investigate the properties of the films. Rutherford backscattering spectrometry, X-ray diffractometry, transmission electron microscopy, and four-point probe measurements are used to analyze the characteristics of Ti₃₇Al₆₃ and Ti₅₃Al₄₇ thin films for high temperature electronics applications. The films show good thermal stability up to 700 °C for 1 h in vacuum. Reasonable resistivity is obtained when appropriate compositions and anneal conditions are used.     

Al2O3保护层对高温下Pt/ZnO/Al2O3电极导电稳定性的影响

本工作研究了Al₂O₃保护层的厚度对高温下声表面波器件电极导电稳定性的影响, 采用激光分子束外延方法在Pt/ZnO/Al₂O₃电极上制备了不同厚度的Al₂O₃保护层。通过测量样品高温环境中的实时电阻, 发现Al₂O₃缓冲层的厚度对电极在高温下的导电稳定性的影响非常大。结果表明, 没有Al₂O₃保护层时, Pt/ZnO/Al₂O₃电极的电阻升温至800 ℃时开始急剧地增加。当包覆40 nm的Al₂O₃保护层时, 电极在升温至900 ℃以上才出现电阻值剧烈增加的现象。而随着Al₂O₃保护层厚度的增加, 电极的电阻在高温下的导电性能也更加稳定。SEM测试结果表明, 经过1000 ℃、1 h的高温测试后, Al₂O₃保护层越薄的Pt/ZnO/Al₂O₃电极, 结块形成的Pt颗粒越大与不连续的Pt空洞更多。这些结果为制备高温下稳定工作的声表面波器件提供了一条新的思路。     

Auger electron spectroscopy of high-speed-deformed Ni/Cu layers

Ni/Cu double- and multilayers subjected to high-speed deformation were investigated by Auger electron spectroscopy (AES) using depth profiling. Ni and Cu thin films were alternately deposited on a 0.3 mm thick Ni substrate using RF magnetron sputtering. The thickness of the double-layer was 90 nm, while that of the multilayer was 160 nm. High-speed compression was performed using bullet masses from 30.0 to 57.4 g at varying bullet speeds between 16.8 and 48.5 m s⁻¹. The strain rate ranged from 6.7×10⁴ to 8.4×10⁵ s⁻¹. Upon high-speed deformation, the thickness of the Ni/Cu double-layer was reduced to about 80% of its original value. The Cu thin film was compressed to a greater extent relative to the Ni thin film (by about 15%), which may be due to the difference in malleability between the two metals. At a strain rate of 8.4×10⁵ s⁻¹, the Ni/Cu double-layer virtually disappeared. Ni/Cu interdiffusion was enhanced by high-speed deformation. The degree of interdiffusion appeared to be greater at lower strain rates. Cu_0.5Ni_0.5 and Cu_0.75Ni_0.25 thin film alloys formed in the high-speed-deformed multilayer sample, indicating that high-speed compression could potentially be used to prepare thin film metal alloys.     

实验优化设计中频反应溅射Al2O3:Ce薄膜发光性质研究

为了得到最优发光的薄膜材料成分参数,采用均匀设计和二次通用旋转组合设计相结合的方法建立发光强度与薄膜中氧含量和Ce³⁺ 离子掺杂浓度的回归方程,并用遗传算法求其取最大值时的解。用中频反应磁控溅射技术制备了相应成分的Al₂O₃:Ce非晶薄膜。在320nm光激发下,获得了较理想的发射光谱,对薄膜发光机理分析表明:薄膜的光致发光来自于Ce³⁺ 离子的5d1激发态向基态4f1的两个劈裂能级的跃迁。发光强度强烈的依赖于薄膜的掺杂浓度和氧元素含量。XPS检测表明,Al₂O₃:Ce薄膜中存在Ce³⁺ 。Ce³⁺ 含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的。薄膜试样的晶体结构应用X射线衍射分析。     

Fabrication of robust Bi3.25La0.75Ti3O12 thin film resistant to hydrogen damage

Ferroelectric bismuth lanthanum titanate (Bi_3.25La_0.75Ti₃O₁₂; BLT) thin films were deposited on Pt/TiO₂/SiO₂/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600–700 °C. The spontaneous polarization (P_s) and the switching polarization (2P_r) of BLT film annealed at 700 °C for 30 min were 22.6 μC/cm² and 29.1 μC/cm², respectively. Moreover, the BLT capacitor did not show any significant reduction of hysteresis for 90 min at 300 °C in the forming gas atmosphere.     

Processing and Heat Treatment Effects on an Al2O3/Ni3Al Composite

Various processing routes may be used to fabricate Ni₃Al matrix composites. In the present study, vacuum hot pressing and hot extrusion were used to fabricate an Al₂O₃ Composite particulate-reinforced Ni3Al composite. Relatively low extrusion temperatures promoted gamma-phase formation as did extended high temperature anneals. The room-temperature bend strength was found to increase as the gamma-phase content increased. Furthermore, the composite creep rate was affected by the. processing parameters and their effect on the amount of gamma/pgamma-prime interface. The matrix and particulates did not exhibit any reaction after normal processing. However, a minor reaction was noted after annealing near 1000°C, while extensive reaction resulting in Ni-Al spinel formation occurred above 1200°C in air     

Fabrication and characterization of (1−x)SrBi2Ta2O9–xBi3TaTiO9 layered structure solid solution thin films for ferroelectric random access memory (FRAM) applications

We report on the properties of (1−x)SrBi₂Ta₂O₉–xBi₃TaTiO₉ solid solution thin films for ferroelectric non-volatile memory applications. The solid solution thin films fabricated by modified metalorganic solution deposition technique showed much improved properties compared to SrBi₂Ta₂O₉. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 600°C and grain size was found to be considerably increased for the solid solution compositions. The film properties were found to be strongly dependent on the composition and annealing temperatures. The measured dielectric constant of the solid solution thin films was in the range 180–225 for films with 10–50% of Bi₃TaTiO₉ content in the solid solution. Ferroelectric properties of (1−x)SrBi₂Ta₂O₉–xBi₃TaTiO₉ thin films were significantly improved compared to SrBi₂Ta₂O₉. For example, the observed remanent polarization (2P_r) and coercive field (E_c) values for films with 0.7SrBi₂Ta₂O₉–0.3Bi₃TaTiO₉ composition, annealed at 650°C, were 12.4 μC/cm² and 80 kV/cm, respectively. The solid solution thin films showed less than 5% decay of the polarization charge after 10¹⁰ switching cycles and good memory retention characteristics after about 10⁶ s of memory retention. The improved microstructural and ferroelectric properties of (1−x)SrBi₂Ta₂O₉–xBi₃TaTiO₉ thin films compared to SrBi₂Ta₂O₉, especially at lower annealing temperatures, suggest their suitability for high density FRAM applications.