压差式漏率测试仪的实验研究

将薄膜电真空计的测量室接于被测密闭容器，静态真空室接于一个比较容器，即组成一台压差式漏率测试仪，首先使两容器压力平衡，真空计读数为零。当被测容器存在漏孔时，真空计薄膜两侧形成压差，真空计指示读数，继而计算出该容器的漏率。应用商品真空计在抽真空测试时，检测的最小可测漏率达１０＾－４－１０＾－５Ｐａ．Ｌｓ；而在充压测试时，因受气体温度变化的影响。灵敏度会降低几个量级。该仪器有可能具备寻找漏孔位置和确定     

真空漏率校准装置的使用

真空漏率校准装置主要用于校准真空计和真空漏孔。简述了真空漏率校准装置的工作原理,讨论了使用中应注意的六个方面。     

标准静态膨胀法真空装置研制

本装置检定范围(10^-3～10^5)Pa，最佳校准能力0．012％～2．2％．可以检定薄膜真空计。热传导真空计以及电离真空计。该装置的建立不仅满足了从大气到10^-3Pa高真空计量的需求，而且还可以用来校准标准漏孔，拓宽了检测领域。     

检漏容器的密封性能对航天器总漏率测试的影响研究

采用非真空氦质谱累积法进行航天器密封系统的总漏率测试时,需要检漏容器对密封系统泄漏出的氦气进行收集。本文通过理论分析,并用正压氦漏孔模拟航天器密封系统的泄漏进行试验验证,得出了检漏容器的密封性能对航天器密封系统总漏率测试的影响,为检漏容器的泄漏给出了建议指标。     

大容积密闭容器背压法漏率检测关键技术研究北大核心CSCD

围绕容积为104cm^3量级的密闭容器开展背压法漏率检测关键技术研究,分析了压氦压力、压氦时间、容器内外壁气体解吸附等因素对实验结果的影响机制,建立了一套可用于大容积密闭容器的背压法检漏流程。理论和实验研究结果表明,将背压法用于预制漏率为10^(-6)Pa·m^3/s量级的大容积密闭容器的漏率检测是可行的。随着漏孔漏率的降低(低于10^(-7)Pa·m^3/s量级),试验件的最低可检漏率也将逐渐低于氦质谱检漏仪的有效检测漏率,而由于被检对象的本底漏率值无法提前获知,将造成将背压法用于更低漏率的大容积密闭容器的漏率测试结果误差极大地增加。相关研究结果对于大容积密闭容器的漏率检测具有一定的理论指导价值。     

正压标准漏孔校准装置

为校准适用于气密检漏仪及流量控制仪表的正压标准漏孔,研制正压标准漏孔校准装置。校准装置由气源压力自动控制部分、被测标准漏孔、皂膜流量计标准组3部分组成。气源压力自动控制部分采用PLC实现整个系统的自动控制,根据标准漏孔的气源压力自动提供压力波动不超过±1%气源。校准装置可以对气源压力在1~1600kPa,漏率在0.001~20L/min范围内正压标准漏孔进行校准,相对扩展不确定度为1.7%~2.0%(k=2)。研究气源压力波动对标准漏孔漏率的影响,气源压力在±1%,±5%波动时,标准漏孔漏率波动与气源压力波动基本一致。     

大容积密闭容器背压法漏率检测关键技术研究

围绕容积为104cm~3量级的密闭容器开展背压法漏率检测关键技术研究,分析了压氦压力、压氦时间、容器内外壁气体解吸附等因素对实验结果的影响机制,建立了一套可用于大容积密闭容器的背压法检漏流程。理论和实验研究结果表明,将背压法用于预制漏率为10~(-6)Pa·m~3/s量级的大容积密闭容器的漏率检测是可行的。随着漏孔漏率的降低(低于10~(-7)Pa·m~3/s量级),试验件的最低可检漏率也将逐渐低于氦质谱检漏仪的有效检测漏率,而由于被检对象的本底漏率值无法提前获知,将造成将背压法用于更低漏率的大容积密闭容器的漏率测试结果误差极大地增加。相关研究结果对于大容积密闭容器的漏率检测具有一定的理论指导价值。     

温度变化对漏孔漏率的影响

分析了漏孔在温度夹变时漏孔的热物理过程和与之相适应的漏孔漏率变化。认为漏孔在突然处于低温状态时，漏率变化的主要因素是示漏气体滞粘系数随温度的变化而造成，漏孔尺寸随温度变化引起漏率变化是次要的。在非稳定状态时，漏率随时间呈指数式变化。     

真空漏率校准装置的研制和应用

真空漏率校准装置可以对(10~5~10~(-4))Pa范围内的各种真空计和(10~(-7)~10~(-9))Pa·m~3/s的真空漏孔进行校准。该装置的特点是结构简单、量程宽、易操作和工作效率高。     

用脉冲超声波对大型容器检漏

脉冲超声波探伤仪发射的超声波,传入待检部位,超声波直线传播直至碰到漏孔,产生回波讯号并被仪器接收。利用漏孔回波讯号被仪器接收这种方式判断容器是否有漏孔以及这些漏孔的位置,根据回波讯号测定漏孔的漏率,     

Uncertainties in calibration using capacitance diaphragm gauges as reference standard

A study of the uncertainties in calibration using capacitance diaphragm gauges as reference standard in the range from 1000 mbar to 10⁻³ mbar is presented. The contributions to the expanded uncertainty are: (i) Uncertainty from the calibration certify of the reference standard; (ii) Long-term stability or shift; (iii) Uncertainties inherent to the reference standard; (iv) Uncertainties derived from the calibration chamber; and (v) Uncertainties derived from the calibration procedure. These contributions have been determined for four reference standard capacitance diaphragm gauges of 1.3 mbar, 13 mbar, 130 mbar and 1300 mbar full scale used in routine calibration. Long-term stability or shift jointly with the uncertainty displayed in the calibration certifies issued by a National Metrological Laboratory are the main contributions to the expanded uncertainty. Values of the shift for each of the reference standard for a period of several years are presented and discussed. Best-expanded uncertainties obtained from calibration of a gauge of similar characteristics to the reference standards are:

10−3-1 mbar	4-0.2% of the reading
1-13 mbar	0.2% of the reading
13-130 mbar	0.2-0.08% of the reading
130-1300 mbar	0.2-0.06% of the reading

Full-size table

     

一种“绝对型”电容薄膜真空计的研制

介绍用磁控溅射制作的从大气往真空约覆盖5个量程的“绝对型”电容薄膜真空规，以及与该真空规配套的真空计的电路。该真空计测量范围为1．3～105Pd，真空规与电容信号检测电路置于同一金属壳内，以避免外界干扰。规的恒温胜温度波动小于±0．1℃，有效地降低了温度的影响。电路的非线性小于0．4％，高真空下北输出漂移小于0．1％，在13～105Pa各量程内，最大校准误差小于读数的4％。     

The calibration of CERL-Planer capacitance strain gauges

CEGB-Planer capacitance strain gauges are used extensively for monitoring the deformation of components operating in the creep range. However, there are significant differences between the way the gauges are installed for use and the way they are installed for calibration. This paper describes the various types of calibrations that have been carried out to identify the errors associated with these differences and the results show that, providing the manufacturers' recommendations are adhered to, the errors are acceptably small.     

Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits

The capabilities and limitations of the well-known C-V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C-V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements.     

Capacitive level meter for liquid rare gases

An international project to search μ→eγ decay includes the use of a liquid xenon gamma ray detector. So, a liquid level meter working at a low temperature with low outgassing is needed and the prototype is constructed. The meter shows the liquid level by measuring the capacitance between electrodes with small intervals immersed in the liquid. The operation was successful with the estimated precision of 1 mm in RMS or better.     

Determination of Water Sorption in Freestanding Epoxy Film by Capacitance Method Using EIS

Electrochemical impedance spectra （EIS） technique was adopted to evaluate the water sorption behaviour of an epoxy freestanding film in a 0.5 mol/L sodium chloride solution at 20℃. The methods for obtaining the capacitance data from EIS data were compared. The Brasher-Kingsbury （BK） and corresponding modified version （Modi-BK） models were used to calculate the water uptake in film and the gravimetric results were presented for comparisons. According to the discussion of the discrepancy of water content in film obtained from two models, a new method was proposed to indicate the organic film structure.     

大型机械工件高精度同轴度误差测量的新方法

本文介绍一种以标准钢丝作基准，借助于专用检具和电容测微仪，以非接触方法对方法对大型机械工件进行同轴度误差测量的新方法，同时，也对组成该检测系统的电容测微仪的标定方法和专用检具的设计特点作了概括说明。     

Effects of single electrodes of Ni(OH)2 and activated carbon on electrochemical performance of Ni(OH)2–activated carbon asymmetric supercapacitor

Nickel hydroxide consisting of loosely packed nanospheres was synthesized as positive electrode material for an asymmetric capacitor based on Ni(OH)₂ and activated carbon (AC). Two series of supercapacitors were fabricated to investigate the effects of the single electrodes of Ni(OH)₂ and AC on the electrochemical performance of asymmetric Ni(OH)₂–AC capacitor. Parameters including cell voltage window, specific capacitance and cyclic stability were assessed. In one series of supercapacitors, mass of Ni(OH)₂ was excessive while mass of AC was varied, the AC electrode thus constrained both the capacitance and the upper limit of cell voltage. Deficiency of AC resulted in lower specific capacitance and narrower cell voltage window but benefited to cyclic stability. In the other series of supercapacitors, the mass of AC was excessive whereas the mass of Ni(OH)₂ was changeable in each cell, Ni(OH)₂ electrode thus dominated both the capacitance and the lower limit of cell voltage. As a consequence, deficiency of Ni(OH)₂ led to higher specific capacity and wider cell voltage window as well as lower cyclic stability. These results can contribute to improving understanding of and optimizing performance of asymmetric Ni(OH)₂–AC capacitor.     

高精度电容测微仪的自校正方法

本详细叙述了一种电容测微仪的自校正方法,并就其工作原理进行了讨论。采用这 方法不需要其它高精度标准,仅利用两相同精度的电容传感器和自校正装置即可进行多次相互校准,最终得到各自准确度达到自身能力极限的校正结果。     

石油焦基活性炭电极电容特性研究

用石油焦作原料,KOH为活化剂,在不同活化条件下制备系列不同比表面积的活性炭。用直流恒流循环实验考察活性炭电极的电化学性能。实验发现,石油焦基活性炭随着活性炭比表面积的增加,活性炭比电容逐渐增大;活性炭孔结构分布相同,随比表面积的增加,比电容线性增加,比表面积利用率降低。活性炭孔结构对比电容有较大的影响,30％KOH电解液可以进入活性炭中大于0.6nm的微孔,孔径越大,其比表面积利用率越高。