Availability of K-out-of-N:G systems with non-identical components subject to repair priorities

In this paper, a K-out-of-N:G system with N categories of components is studied. Each component category is characterized by its own failure and repair rates. There are R repair facilities, and repair priorities are specified between the N non-identical components. An algorithm for automatic construction of the system state transition diagram is presented. The stationary availability of each component and that of the system are evaluated by using a multi-dimensional Markov model. We show how this model can be represented as a network of stochastic automata with state-dependent transitions that can be implemented via generalized tensor (or Kronecker) algebra. For the efficiency assessment, an analog Monte Carlo simulation model is developed. Experiments are then conducted and simulation results are compared to those obtained by the proposed approach.     

Linear m-gap-consecutive k-out-of-r-from-n:F systems

This paper proposes a new model that generalizes the linear consecutive k-out-of-r-from-n system. In this model the system consists of n linearly ordered statistically independent identical elements and fails if the gap between any pair of groups of r consecutive elements containing at least k failed elements is less than m elements. An algorithm for system reliability evaluation is suggested, which is based on an extended universal moment generating function. Examples of system reliability evaluation are presented.     

Multi-objective optimization of linear multi-state multiple sliding window system

This paper considers the optimal element sequencing in a linear multi-state multiple sliding window system that consists of n linearly ordered multi-state elements. Each multi-state element can have different states: from complete failure up to perfect functioning. A performance rate is associated with each state. The failure of type i in the system occurs if for any i (1≤i≤I) the cumulative performance of any r_i consecutive elements is lower than w_i. The element sequence strongly affects the probability of any type of system failure. The sequence that minimizes the probability of certain type of failure can provide high probability of other types of failures. Therefore the optimization problem for the multiple sliding window system is essentially multi-objective. The paper formulates and solves the multi-objective optimization problem for the multiple sliding window systems. A multi-objective Genetic Algorithm is used as the optimization engine. Illustrative examples are presented.     

Availability and reliability of k-out-of-(M+N):G warm standby systems

Redundancy or standby is a technique that has been widely applied to improving system reliability and availability in system design. In most cases, components in standby system are assumed to be statistically identical and independent. However, in many practical applications, not all components in standby can be treated as identical because they have different failure and repair rates. In this paper, one kind of such systems with two categories of components is studied, which is named k-out-of-(M+N):G warm standby system. In the system, one category of the components is of type 1 and the other type 2. There are M type 1 components and N type 2 components. Components of type 1 have a lower failure rate and are preferably repaired if there is one failed. There are r repair facilities available. By using Markov model, the system state transition process can be clearly illustrated, and furthermore, the solutions of system availability and reliability are obtained based on this. An example representing a power-generator and transmission system is given to illustrate the solutions of the system availability and reliability.     

Dielectric, ferroelectric and piezoelectric properties of Bi0.5Na0.5TiO3-(Ba0.7Ca0.3)TiO3 ceramics at morphotropic phase boundary composition

(1 − x)Bi_0.5Na_0.5TiO₃-x(Ba_0.7Ca_0.3)TiO₃ (BNT-xBCT, 0 ≤ x ≤ 0.15) solid solutions have been synthesized by a conventional solid state sintering method for obtaining a morphotropic phase boundary (MPB) with good piezoelectric properties. X-ray diffraction patterns reveal that a MPB of rhombohedral and tetragonal phases is formed at compositions 0.09 ≤ x ≤ 0.12. Addition of BCT into BNT greatly lowered coercive field E_c without degrading remanent polarization P_r. The specimen with x = 0.09 has the good piezoelectric properties: d₃₃ = 125 pC/N and k_p = 0.33. A modified Curie-Weiss law was used to fit the dielectric constant of BNT-xBCT ceramics, and a frequency dispersion was observed during the phase transitions from antiferroelectric to paraelectric in specimens with x exceeding 0.06.     

Microstructure effect on mechanical properties of in situ synthesized titanium matrix composites reinforced with TiB and La2O3

High temperature titanium matrix composites (TMCs) with different volume fraction of reinforcements were insitu synthesized by casting and hot forging. An effort was made to investigate the mechanical properties as a function of the microstructure of composites. Tensile tests were performed at room temperature, 600 °C, 650 °C and 700 °C respectively. Creep behavior at 650 °C was characterized in the stress range of 200-300 MPa. Results indicated that the composite with 2.11 vol.% reinforcements had the highest tensile strength and lowest steady state creep rate. Morphology of TiB whiskers was critical to mechanical properties of TMCs. TiB whiskers fracture and debonding acted as the dominant failure modes.     

Characterization of interface states at Au/SnO2/n-Si (MOS) structures

The purpose of this paper is to characterize the interface states in Au/SnO₂/n-Si (MOS) structures. The characteristic parameters of the interface states are derived from capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements as a function of frequency. The C-V and G/ω-V measurements have been carried out in the frequency range of 1 kHz to 1 MHz at room temperature. At each frequency, the measured capacitance and conductance decrease with increasing frequency due to a continuous distribution of the interface states. The frequency dispersion in capacitance and conductance can be interpreted in terms of the interface state density (N_ss) and series resistance (R_s). Especially at low frequencies, the interface states can follow the ac signal and yield an excess capacitance. Due to a continuous density distribution of interface states, the C and G/ω values decrease in depletion region with increasing frequencies. At high frequencies, the effect of series resistance on the capacitance is found appreciable due to the interface state capacitance decreasing with increasing frequency. Experimental results show that the locations of interface states between SnO₂/Si and series resistance have a significant effect on electrical characteristics of MOS structures.     

Modeling safety instrumented systems with MooN voting architectures addressing system reconfiguration for testing

This paper addresses the modeling of probability of dangerous failure on demand and spurious trip rate of safety instrumented systems that include MooN voting redundancies in their architecture. MooN systems are a special case of k-out-of-n systems. The first part of the article is devoted to the development of a time-dependent probability of dangerous failure on demand model with capability of handling MooN systems. The model is able to model explicitly common cause failure and diagnostic coverage, as well as different test frequencies and strategies. It includes quantification of both detected and undetected failures, and puts emphasis on the quantification of common cause failure to the system probability of dangerous failure on demand as an additional component. In order to be able to accommodate changes in testing strategies, special treatment is devoted to the analysis of system reconfiguration (including common cause failure) during test of one of its components, what is then included in the model. Another model for spurious trip rate is also analyzed and extended under the same methodology in order to empower it with similar capabilities. These two models are powerful enough, but at the same time simple, to be suitable for handling of dependability measures in multi-objective optimization of both system design and test strategies for safety instrumented systems. The level of modeling detail considered permits compliance with the requirements of the standard IEC 61508. The two models are applied to brief case studies to demonstrate their effectiveness. The results obtained demonstrated that the first model is adequate to quantify time-dependent PFD of MooN systems during different system states (i.e. full operation, test and repair) and different MooN configurations, which values are averaged to obtain the PFD_avg. Also, it was demonstrated that the second model is adequate to quantify STR including spurious trips induced by internal component failure and by test itself. Both models were tested for different architectures with 1≤N≤5 and 2≤M≤5 subject to uniform staggered test. The results obtained also showed the effects that modifying M and N has on both PFD_avg and STR, and also demonstrated the conflicting nature of these two measures with respect to one another.     

Three-dimensional stress state around quarter-elliptical corner cracks in elastic plates subjected to uniform tension loading

Detailed full-field three-dimensional (3D) finite element analyses have been conducted to study the out-of-plane stress constraint factor T_z around a quarter-elliptical corner crack embedded in an isotropic elastic plate subjected to uniform tension loading. The distributions of T_z are studied in the forward section (0° ? θ ? 90°) of the corner cracks with aspect ratios a/c of 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0. In the normal plane of the crack front line, T_z drops radially from Poisson’s ratio at the crack tip to zero beyond certain radial distances. Strong 3D zones (T_z > 0) exist within a radial distance r/a of about 4.6-0.7 for a/c = 0.2-1.0 along the crack front, despite the stress-free boundary conditions far away. At the same radial distance along the crack front in the 3D zones, T_z increases from zero on one free surface to a peak value in the interior, and then decreases to zero on another free surface. The distributions of T_z near the corner points are also discussed. Empirical formulae describing the 3D distributions of T_z are obtained by fitting the numerical results, which prevail with a sufficient accuracy in the valid range of 0.2 ? a/c ? 1.0 and 0° ? θ ? 90° except very near the free surfaces where T_z is extremely low. Combined with the K-T solution, the transition of approximate plane-stress state near the surfaces to plane-strain state in the interior can be characterized more accurately.     

Optical and electrical properties of vapour phase grown Zn1 − xCrxTe crystals

The optical and electrical properties of vapour phase grown crystals of diluted magnetic semiconductor Zn_1 − xCr_xTe were investigated for 0 ≤ x ≤ 0.005. The diffuse reflectance spectra exhibited an increase in the fundamental absorption edge (E₀) with composition x and were also dominated by a broad absorption band around 5200 cm^− 1 arising from ⁵T₂ → ⁵E transition. The ⁵T₂ and ⁵E levels originate from the crystal field splitting of the ⁵D free ion in the ground state. The electrical resistivity measurements revealed semiconducting behaviour of the samples with p-type conductivity in the temperature range of 200-450 K.     

Photogeneration of charges in microcrystalline chlorophyll a

The electric-field and temperature dependence of hole photogeneration in chlorophyll a (Chla) have been analyzed in terms of electric-field assisted thermal dissociation of charge pairs based on Onsager theory. An excellent agreement between the experimental and theoretical values of the slope-to-intercept ratio, S/I, for the plot of photogeneration efficiency vs. electric field at low field strengths provides a proof for the applicability of the Onsager approach to the photogeneration of charges in Chla. A value of 19 nm has been obtained for Coulomb capture radius, r_c, from S/I. From the temperature dependence of photogeneration, the initial separation, r₀, of photogenerated electron-hole has been evaluated, and has a value of 1.24 nm. This smaller r₀ compared to r_c leads to a feeble dissociation probability of electron-hole pairs into free carriers, and may, among other factors, explain the low power conversion efficiencies of Chla photovoltaic cells.     

A closed form solution for the G/M/r machine interference model

This paper solves the machine interference problem in which N different machines are looked after by a team of r operatives. The run time of each machine is assumed to have a general distribution, different for each machine and the repair times are assumed to have a negative exponential distribution with different means for the different machines. An explicit expression for the probability that a particular group of machines is found running in the steady state is derived. From this other useful measures for the system can be obtained. It is shown that these depend on the run time distributions only through the means of those distributions.     

Synthesis and weak ferromagnetism of Dy-doped BiFeO3 powders

Dy-doped BiFeO₃ powders were synthesized by sol-gel auto-combustion method. X-ray diffraction of the powders were recorded and analyzed for the confirmation of crystal structure and the calculation of the lattice parameters. X-ray photoelectron spectroscopy was used to identify the oxidation state of Fe. Detailed studies of vibrating sample magnetometer indicated a significant effect of Dy doping on the magnetic properties of Bi_1 − xDy_xFeO₃ powders at room temperature. When x = 0.1, BDFO shows the best magnetic property. The origin of weak ferromagnetism was discussed in this paper.     

Electrical properties of lead-free thick film NTC thermistors based on perovskite-type BaCoxCo2xBi1 − 3xO3

Lead-free thick film negative temperature coefficient (NTC) thermistors based on perovskite-type BaCo^II_xCo^III_2xBi_1 − 3xO₃ (x ≤ 0.1) were prepared by mature screen-printing technology. The microstructures of the thick films sintered at 720 °C were examined by X-ray diffraction and scanning electron microscopy. The electrical properties were analyzed by measuring the resistance-temperature characteristics. For the BaBiO₃ thick films, the room-temperature resistivity is 0.22 MΩ cm, while the room-temperature resistivity is sharply decreased to about 3 Ω cm by replacing of Bi with a small amount of Co. For compositions 0.02 ≤ x ≤ 0.1, the values of room-temperature resistivity (ρ₂₃), thermistor constant (B_25/85) and activation energy are in the range of 1.995-2.975 Ω cm, 1140-1234 K and 0.102-0.111 eV, respectively.     

Effects of component size, geometry, microstructure and aging on the embrittling behavior of creep crack growth correlated by the Q parameter

The driving force for creep crack growth is dominated by local elastic-plastic stress in the creep damage zone around a crack tip, temperature and microstructure. In previous work, C^∗, C_t, load line displacement rate dδ/dt and Q^∗ parameters have been proposed as formulations of creep crack growth rate (CCGR). Furthermore, using parameters mentioned above, the construction of the algorithm of predictive law for creep crack growth life is necessary for life assessment procedures. The aim of this paper is to identify the effects of component size, geometry, microstructure, aging and weldment on the embrittling behavior of creep crack growth and incorporate these effects in a predictive law, using the Q^∗ parameter. It was found that for specimen size (width and thickness) and of material softening due to aging the values of the activation energy were the same whereas for grain size change and structural brittleness, which affected crack tip multi-axial stress state the values for the activation energy for CCGR differ.     

Optimal design of multi-state weighted k-out-of-n systems based on component design

This paper presents a study on design optimization of multi-state weighted k-out-of-n systems. The studied system reliability model is more general than the traditional k-out-of-n system model. The system and its components are capable of assuming a whole range of performance levels, varying from perfect functioning to complete failure. A utility value corresponding to each state is used to indicate the corresponding performance level. A widely studied reliability optimization problem is the “component selection problem”, which involves selection of components with known reliability and cost characteristics. Less adequately addressed has been the problem of determining system cost and utility based on the relationships between component reliability, cost and utility. This paper addresses this topic. All the optimization problems dealt with in this paper can be categorized as either minimizing the expected total system cost subject to system reliability requirements, or maximizing system reliability subject to total system cost limitation. The resulting optimization problems are too complicated to be solved by traditional optimization approaches; therefore, genetic algorithm (GA) is used to solve them. Our results show that GA is a powerful tool for solving these kinds of problems.     

Structure and thermal conductivity of Gd2(TixZr1 − x)2O7 ceramics

The Gd₂(Ti_xZr_1 − x)₂O₇ (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd₂(Ti_xZr_1 − x)₂O₇ were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd₂(Ti_xZr_1 − x)₂O₇ from room temperature to 1400 °C was measured by a laser-flash method. The Gd₂Zr₂O₇ has a defect fluorite-type structure; however, Gd₂(Ti_xZr_1 − x)₂O₇ (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd₂Zr₂O₇ and Gd₂Ti₂O₇ are infinitely soluable. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ is within the range of 1.33 to 2.86 W m^− 1 K^− 1 from room temperature to 1400 °C.     

Enhancement microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by Substituting Mg for Co

The microwave dielectric properties of La(Mg_0.5−xCo_xSn_0.5)O₃ ceramics were examined with a view to exploiting them for mobile communication. The La(Mg_0.5−xCo_xSn_0.5)O₃ ceramics were prepared using the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La(Mg_0.4Co_0.1Sn_0.5)O₃ ceramics revealed that La(Mg_0.4Co_0.1Sn_0.5)O₃ is the main crystalline phase, which is accompanied by small extent of La₂Sn₂O₇ as the second phase. Formation of this Sn-rich second phase was attributed to the loss of MgO upon ignition. Increasing the sintering temperatures seemed to promote the formation of La₂Sn₂O₇. An apparent density of 6.67 g cm⁻³, a dielectric constant (?_r) of 20.3, a quality factor (Q.F.) of 70,500 GHz, and a temperature coefficient of resonant frequency (τ_f) of −77 ppm °C⁻¹ were obtained for La(Mg_0.4Co_0.1Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h.     

Thin film coatings on capillary inner walls by microplasma

The effect of a strong static magnetic field on a capillary microplasma generated by RF (13.56 MHz) excitation using the parallel-plate electrodes was studied. If the magnetic field is perpendicular to both RF electric field and a capillary axis and also the Larmor radius of an electron r_L is sufficiently smaller than both the electron mean free path λ_e and a discharge gap d_g, the oscillating E × B drift will appear effectively in a parallel direction with a capillary axis. It was found that a magnetized capillary microplasma generates under the condition of r_L < λ_e and r_L < d_g. Next, to examine the effect of a strong magnetic field on thin film deposition, SiO₂ thin film coating on the inner wall of a poly(propylene) (PP) narrow tube using tetraethoxysilane as the precursor was demonstrated under the condition with/without magnetic field of 0.4 T at atmospheric pressure. SEM images and XPS spectra showed that SiO₂ films with a smooth surface were prepared on the tube inner wall in the both cases.     

Interdiffusion effect on GaAsSbN/GaAs quantum well structure studied by 10-band k•p model

The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum well (QW) grown by solid-source molecular-beam epitaxy (SS-MBE) has been investigated. Low-temperature (4 K) PL peaks shift to higher energy sides with the increase of annealing temperature. An As-Sb atomic interdiffusion at the heterointerface is proposed to model this effect. The compositional profile of the QW after interdiffusion is modeled by an error function distribution and calculated with the 10-band k•p method. When the diffusion length equals to 1.4 nm, a corresponding transition energy blueshift of 36 meV is derived. This agrees with the experimental result under the optimum condition (750 °C at 5 min).