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1.
Solution‐processed lead iodide (PbI2) governs the charge transport characteristics in the hybrid metal halide perovskites. Besides being a precursor in enhancing the performance of perovskite solar cells, PbI2 alone offers remarkable optical and ultrasensitive photoresponsive properties that remain largely unexplored. Here, the photophysics and the ultrafast carrier dynamics of the solution processed PbI2 thin film is probed experimentally. A PbI2 integrated metamaterial photonic device with switchable picosecond time response at extremely low photoexcitation fluences is demonstrated. Further, findings show strongly confined terahertz field induced tailoring of sensitivity and switching time of the metamaterial resonances for different thicknesses of PbI2 thin film. The approach has two far reaching consequences: the first lead‐iodide‐based ultrafast photonic device and resonantly confined electromagnetic field tailored transient nonequilibrium dynamics of PbI2 which could also be applied to a broad range of semiconductors for designing on‐chip, ultrafast, all‐optical switchable photonic devices.  相似文献   

2.
The semiconductor exciton–polariton, arising from the strong coupling between excitons and confined cavity photon modes, is not only of fundamental importance in macroscopic quantum effects but also has wide application prospects in ultralow‐threshold polariton lasers, slowing‐light devices, and quantum light sources. Very recently, metallic halide perovskites have been considered as a great candidate for exciton–polariton devices owing to their low‐cost fabrication, large exciton oscillator strength, and binding energy. Herein, the latest progress in exciton–polaritons and polariton lasers of perovskites are reviewed. Polaritons in planar and nanowires Fabry–Pérot microcavities are discussed with particular reference to material and photophysics. Finally, a perspective on the remaining challenges in perovskite polaritons research is given.  相似文献   

3.
Nanophotonics based on resonant nanostructures and metasurfaces made of halide perovskites have become a prospective direction for efficient light manipulation at the subwavelength scale in advanced photonic designs. One of the main challenges in this field is the lack of large‐scale low‐cost technique for subwavelength perovskite structures fabrication preserving highly efficient luminescence. Here, unique properties of halide perovskites addressed to their extremely low thermal conductivity (lower than that of silica glass) and high defect tolerance to apply projection femtosecond laser lithography for nanofabrication with precise spatial control in all three dimensions preserving the material luminescence efficiency are employed. Namely, with CH3NH3PbI3 perovskite highly ordered nanoholes and nanostripes of width as small as 250 nm, metasurfaces with periods less than 400 nm, and nanowire lasers as thin as 500 nm, corresponding to the state‐of‐the‐art in multistage expensive lithographical methods are created. Remarkable performance of the developed approach allows to demonstrate a number of advanced optical applications, including morphology‐controlled photoluminescence yield, structural coloring, optical‐ information encryption, and lasing.  相似文献   

4.
Halide perovskites provide an ideal platform for engineering highly promising semiconductor materials for a wide range of applications in optoelectronic devices, such as photovoltaics, light-emitting diodes, photodetectors, and lasers. More recently, increasing research efforts have been directed toward the nonlinear optical properties of halide perovskites because of their unique chemical and electronic properties, which are of crucial importance for advancing their applications in next-generation photonic devices. Here, the current state of the art in the field of nonlinear optics (NLO) in halide perovskite materials is reviewed. Halide perovskites are categorized into hybrid organic/inorganic and pure inorganic ones, and their second-, third-, and higher-order NLO properties are summarized. The performance of halide perovskite materials in NLO devices such as upconversion lasers and ultrafast laser modulators is analyzed. Several potential perspectives and research directions of these promising materials for nonlinear optics are presented.  相似文献   

5.
At the heart of electrically driven semiconductors lasers lies their gain medium that typically comprises epitaxially grown double heterostuctures or multiple quantum wells. The simultaneous spatial confinement of charge carriers and photons afforded by the smaller bandgaps and higher refractive index of the active layers as compared to the cladding layers in these structures is essential for the optical‐gain enhancement favorable for device operation. Emulating these inorganic gain media, superb properties of highly stable low‐threshold (as low as ≈8 µJ cm?2) linearly polarized lasing from solution‐processed Ruddlesden–Popper (RP) perovskite microplatelets are realized. Detailed investigations using microarea transient spectroscopies together with finite‐difference time‐domain simulations validate that the mixed lower‐dimensional RP perovskites (functioning as cladding layers) within the microplatelets provide both enhanced exciton and photon confinement for the higher‐dimensional RP perovskites (functioning as the active gain media). Furthermore, structure–lasing‐threshold relationship (i.e., correlating the content of lower‐dimensional RP perovskites in a single microplatelet) vital for design and performance optimization is established. Dual‐wavelength lasing from these quasi‐2D RP perovskite microplatelets can also be achieved. These unique properties distinguish RP perovskite microplatelets as a new family of self‐assembled multilayer planar waveguide gain media favorable for developing efficient lasers.  相似文献   

6.
Following the rejuvenation of 3D organic–inorganic hybrid perovskites, like CH3NH3PbI3, (quasi)‐2D Ruddlesden–Popper soft halide perovskites R2An?1PbnX3n+1 have recently become another focus in the optoelectronic and photovoltaic device community. Although quasi‐2D perovskites were first introduced to stabilize optoelectronic/photovoltaic devices against moisture, more interesting properties and device applications, such as solar cells, light‐emitting diodes, white‐light emitters, lasers, and polaritonic emission, have followed. While delicate engineering design has pushed the performance of various devices forward remarkably, understanding of the fundamental properties, especially the charge‐transfer process, electron–phonon interactions, and the growth mechanism in (quasi)‐2D halide perovskites, remains limited and even controversial. Here, after reviewing the current understanding and the nexus between optoelectronic/photovoltaic properties of 2D and 3D halide perovskites, the growth mechanisms, charge‐transfer processes, vibrational properties, and electron–phonon interactions of soft halide perovskites, mainly in quasi‐2D systems, are discussed. It is suggested that single‐crystal‐based studies are needed to deepen the understanding of the aforementioned fundamental properties, and will eventually contribute to device performance.  相似文献   

7.
The last eight years (2009–2017) have seen an explosive growth of interest in organic–inorganic halide perovskites in the research communities of photovoltaics and light‐emitting diodes. In addition, recent advancements have demonstrated that this type of perovskite has a great potential in the technology of light‐signal detection with a comparable performance to commercially available crystalline Si and III–V photodetectors. The contemporary growth of state‐of‐the‐art multifunctional perovskites in the field of light‐signal detection has benefited from its outstanding intrinsic optoelectronic properties, including photoinduced polarization, high drift mobilities, and effective charge collection, which are excellent for this application. Photoactive perovskite semiconductors combine effective light absorption, allowing detection of a wide range of electromagnetic waves from ultraviolet and visible, to the near‐infrared region, with low‐cost solution processability and good photon yield. This class of semiconductor might empower breakthrough photodetector technology in the field of imaging, optical communications, and biomedical sensing. Therefore, here, the focus is specifically on the critical understanding of materials synthesis, design, and engineering for the next‐stage development of perovskite photodetectors and highlighting the current challenges in the field, which need to be further studied in the future.  相似文献   

8.
As competing with the established silicon technology, organic–inorganic metal halide perovskites are continually gaining ground in optoelectronics due to their excellent material properties and low‐cost production. The ability to have control over their shape, as well as composition and crystallinity, is indispensable for practical materialization. Many sophisticated nanofabrication methods have been devised to shape perovskites; however, they are still limited to in‐plane, low‐aspect‐ratio, and simple forms. This is in stark contrast with the demands of modern optoelectronics with freeform circuitry and high integration density. Here, a nanoprecision 3D printing is developed for organic–inorganic metal halide perovskites. The method is based on guiding evaporation‐induced perovskite crystallization in mid‐air using a femtoliter ink meniscus formed on a nanopipette, resulting in freestanding 3D perovskite nanostructures with a preferred crystal orientation. Stretching the ink meniscus with a pulling process enables on‐demand control of the nanostructure's diameter and hollowness, leading to an unprecedented tubular‐solid transition. With varying the pulling direction, a layer‐by‐layer stacking of perovskite nanostructures is successfully demonstrated with programmed shapes and positions, a primary step for additive manufacturing. It is expected that the method has the potential to create freeform perovskite nanostructures for customized optoelectronics.  相似文献   

9.
Organic–inorganic halide perovskite (OHP) materials, for example, CH3NH3PbI3 (MAPbI3), have attracted significant interest for applications such as solar cells, photodectors, light‐emitting diodes, and lasers. Previous studies have shown that charged defects can migrate in perovskites under an electric field and/or light illumination, potentially preventing these devices from practical applications. Understanding and control of the defect generation and movement will not only lead to more stable devices but also new device concepts. Here, it is shown that the formation/annihilation of iodine vacancies (VI's) in MAPbI3 films, driven by electric fields and light illumination, can induce pronounced resistive switching effects. Due to a low diffusion energy barrier (≈0.17 eV), the VI's can readily drift under an electric field, and spontaneously diffuse with a concentration gradient. It is shown that the VI diffusion process can be suppressed by controlling the affinity of the contact electrode material to I? ions, or by light illumination. An electrical‐write and optical‐erase memory element is further demonstrated by coupling ion migration with electric fields and light illumination. These results provide guidance toward improved stability and performance of perovskite‐based optoelectronic systems, and can lead to the development of solid‐state devices that couple ionics, electronics, and optics.  相似文献   

10.
The tremendous interest focused on organic–inorganic halide perovskites since 2012 derives from their unique optical and electrical properties, which make them excellent photovoltaic materials. Pb‐based halide perovskite solar cells, in particular, currently stand at a record efficiency of ≈23%, fulfilling their potential toward commercialization. However, because of the toxicity concerns of Pb‐based perovskite solar cells, their market prospects are hindered. In principle, Pb can be replaced with other less‐toxic, environmentally benign metals. Sn‐based perovskites are thus the far most promising alternative due to their very similar and perhaps even superior semiconductor characteristics. After years of effort invested in Sn‐based halide perovskites, sufficient breakthroughs have finally been achieved that make them the next runners up to the Pb halide perovskites. To help the reader better understand the nature of Sn‐based halide perovskites, their optical and electrical properties are systematically discussed. Recent progress in Sn‐based perovskite solar cells, focusing mainly on film fabrication methods and different device architectures, and highlighting roadblocks to progress and opportunities for future work are reviewed. Finally, a brief overview of mixed Sn/Pb‐based systems with their anomalous yet beneficial optical trends are discussed. The current challenges and a future outlook for Sn‐based perovskites are discussed.  相似文献   

11.
Unusual photophysical properties of organic–inorganic hybrid perovskites have not only enabled exceptional performance in optoelectronic devices, but also led to debates on the nature of charge carriers in these materials. This study makes the first observation of intense terahertz (THz) emission from the hybrid perovskite methylammonium lead iodide (CH3NH3PbI3) following photoexcitation, enabling an ultrafast probe of charge separation, hot‐carrier transport, and carrier–lattice coupling under 1‐sun‐equivalent illumination conditions. Using this approach, the initial charge separation/transport in the hybrid perovskites is shown to be driven by diffusion and not by surface fields or intrinsic ferroelectricity. Diffusivities of the hot and band‐edge carriers along the surface normal direction are calculated by analyzing the emitted THz transients, with direct implications for hot‐carrier device applications. Furthermore, photogenerated carriers are found to drive coherent terahertz‐frequency lattice distortions, associated with reorganizations of the lead‐iodide octahedra as well as coupled vibrations of the organic and inorganic sublattices. This strong and coherent carrier–lattice coupling is resolved on femtosecond timescales and found to be important both for resonant and far‐above‐gap photoexcitation. This study indicates that ultrafast lattice distortions play a key role in the initial processes associated with charge transport.  相似文献   

12.
Lead halide perovskites are intensively studied in past few years due to their potential applications in optoelectronic devices such as solar cells, photodetectors, light‐emitting diodes (LED), and lasers. In addition to the rapid developments in material synthesis and device fabrication, it is also very interesting to postsynthetically control the optical properties with external irradiations. Here, the influences of very low energy (10–20 keV) electron beam of standard electron beam lithography are experimentally explored on the properties of lead halide perovskites. It is confirmed that the radiolysis process also happens and it can selectively change the photoluminescence, enabling the direct formation of nanolaser array, microsized light emitter array, and micropictures with an electron beam writer. Interestingly, it is found that discontinuous metallic lead layers are formed on the top and bottom surfaces of perovskite microplate during the radiolysis process, which can act as carrier conducting layers and significantly increase the photocurrent of perovskite photodetector by a factor of 217%. By using the electron beam with low energy to modify the perovskite, this method promises to shape the emission patterns for micro‐LED with well‐preserved optical properties and improves the photocurrent of photodetector.  相似文献   

13.
Organic–inorganic perovskites with intriguing optical and electrical properties have attracted significant research interests due to their excellent performance in optoelectronic devices. Recent efforts on preparing uniform and large‐grain polycrystalline perovskite films have led to enhanced carrier lifetime up to several microseconds. However, the mobility and trap densities of polycrystalline perovskite films are still significantly behind their single‐crystal counterparts. Here, a facile topotactic‐oriented attachment (TOA) process to grow highly oriented perovskite films, featuring strong uniaxial‐crystallographic texture, micrometer‐grain morphology, high crystallinity, low trap density (≈4 × 1014 cm?3), and unprecedented 9 GHz charge‐carrier mobility (71 cm2 V?1 s?1), is demonstrated. TOA‐perovskite‐based n‐i‐p planar solar cells show minimal discrepancies between stabilized efficiency (19.0%) and reverse‐scan efficiency (19.7%). The TOA process is also applicable for growing other state‐of‐the‐art perovskite alloys, including triple‐cation and mixed‐halide perovskites.  相似文献   

14.
Recently, organometal halide perovskite‐based optoelectronics, particularly lasers, have attracted intensive attentions because of its outstanding spectral coherence, low threshold, and wideband tunability. In this work, high‐quality CH3NH3PbBr3 single crystals with a unique shape of cube‐corner pyramids are synthesized on mica substrates using chemical vapor deposition method. These micropyramids naturally form cube‐corner cavities, which are eminent candidates for small‐sized resonators and retroreflectors. The as‐grown perovskites show strong emission ≈530 nm in the vertical direction at room temperature. A special Fabry–Pérot (F–P) mode is employed to interpret the light confinement in the cavity. Lasing from the perovskite pyramids is observed from 80 to 200 K, with threshold ranging from ≈92 µJ cm?2 to 2.2 mJ cm?2, yielding a characteristic temperature of T0 = 35 K. By coating a thin layer of Ag film, the threshold is reduced from ≈92 to 26 µJ cm?2, which is accompanied by room temperature lasing with a threshold of ≈75 µJ cm?2. This work advocates the prospect of shape‐engineered perovskite crystals toward developing micro‐sized optoelectronic devices and potentially investigating light–matter coupling in quantum optics.  相似文献   

15.
超材料(metamaterials)因为能够在亚波长尺度范围内精细调控电磁波而受到人们广泛关注。超材料具有丰富的电磁模态,在表面支持高度局域场增强且对周围介电环境极其敏感,可应用于无标记光学生物传感领域。与传统光学生物传感器相比,超材料生物传感器具有小型化、集成化、高度灵敏、多功能可定制等突出优点。本文总结了近年来超材料生物传感器在可见光、近红外、中红外以及太赫兹波段的研究进展,包括折射率生物传感、表面增强拉曼散射、表面增强红外吸收和太赫兹生物传感等。  相似文献   

16.
Compared with organic–inorganic hybrid halide perovskites (OIHPs), inorganic cesium lead halide perovskites (CsPbX3) possess superior intrinsic stability for high temperatures and are considered one of the most attractive research hotspots in the perovskite photovoltaic (PV) field in the past several years. The PCE of CsPbX3 inorganic perovskite solar cells (IPSCs) has increased from 2.9% in 2015 to more than 20% with excellent stability. There are still many on-going studies on the properties of perovskite materials and their applications in PV technology, thereby needing a thorough understanding. Here, the progress of inorganic perovskites is systematically introduced, including the fundamental properties of CsPbX3 materials and CsPbX3-based PV devices. The origins of stability and instability of CsPbX3 and defects in CsPbX3 are discussed. CsPbI3-, CsPbI2Br-, CsPbIBr2- and CsPbBr3-based PV devices and performance are comprehensively reviewed. The stabilization methods and mechanism for the photoactive phases of inorganic perovskites with low bandgap are emphasized. Reported strategies to boost the performance of CsPbX3-based IPSCs are summarized. In the end, the potential of inorganic perovskites is evaluated, which opens up new prospects for the commercialization of IPSCs.  相似文献   

17.
All‐inorganic perovskites are considered to be one of the most appealing research hotspots in the field of perovskite photovoltaics in the past 3 years due to their superior thermal stability compared to their organic–inorganic hybrid counterparts. The power‐conversion efficiency has reached 17.06% and the number of important publications is ever increasing. Here, the progress of inorganic perovskites is systematically highlighted, covering materials design, preparation of high‐quality perovskite films, and avoidance of phase instabilities. Inorganic perovskites, nanocrystals, quantum dots, and lead‐free compounds are discussed and the corresponding device performances are reviewed, which have been realized on both rigid and flexible substrates. Methods for stabilization of the cubic phase of low‐bandgap inorganic perovskites are emphasized, which is a prerequisite for highly efficient and stable solar cells. In addition, energy loss mechanisms both in the bulk of the perovskite and at the interfaces of perovskite and charge selective layers are unraveled. Reported approaches to reduce these charge‐carrier recombination losses are summarized and complemented by methods proposed from our side. Finally, the potential of inorganic perovskites as stable absorbers is assessed, which opens up new perspectives toward the commercialization of inorganic perovskite solar cells.  相似文献   

18.
Rapid hot‐carrier cooling is a major loss channel in solar cells. Thermodynamic calculations reveal a 66% solar conversion efficiency for single junction cells (under 1 sun illumination) if these hot carriers are harvested before cooling to the lattice temperature. A reduced hot‐carrier cooling rate for efficient extraction is a key enabler to this disruptive technology. Recently, halide perovskites emerge as promising candidates with favorable hot‐carrier properties: slow hot‐carrier cooling lifetimes several orders of magnitude longer than conventional solar cell absorbers, long‐range hot‐carrier transport (up to ≈600 nm), and highly efficient hot‐carrier extraction (up to ≈83%). This review presents the developmental milestones, distills the complex photophysical findings, and highlights the challenges and opportunities in this emerging field. A developmental toolbox for engineering the slow hot‐carrier cooling properties in halide perovskites and prospects for perovskite hot‐carrier solar cells are also discussed.  相似文献   

19.
High‐temperature vapor phase epitaxy (VPE) has been proved ubiquitously powerful in enabling high‐performance electro‐optic devices in III–V semiconductor field. A typical example is the successful growth of p‐type GaN by VPE for blue light‐emitting diodes. VPE excels as it controls film defects such as point/interface defects and grain boundary, thanks to its high‐temperature processing condition and controllable deposition rate. For the first time, single‐crystalline high‐temperature VPE halide perovskite thin film has been demonstrated—a unique platform on unveiling previously uncovered carrier dynamics in inorganic halide perovskites. Toward wafer‐scale epitaxial and grain boundary‐free film is grown with alkali halides as substrates. It is shown the metal alkali halides could be used as universal substrates for VPE growth of perovskite due to their similar material chemistry and lattice constant. With VPE, hot photoluminescence and nanosecond photo‐Dember effect are revealed in inorganic halide perovskite. These two phenomena suggest that inorganic halide perovskite could be as compelling as its organic–inorganic counterpart regarding optoelectronic properties and help explain the long carrier lifetime in halide perovskite. The findings suggest a new avenue on developing high‐quality large‐scale single‐crystalline halide perovskite films requiring precise control of defects and morphology.  相似文献   

20.
The best performing modern optoelectronic devices rely on single‐crystalline thin‐film (SC‐TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low‐cost solution‐based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light‐emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin‐film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC‐TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain‐bandwidth product, and a 100‐photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness‐optimized SC‐TF with much higher mobility and longer recombination time. The results indicate that high‐performance perovskite devices based on SC‐TF may become competitive in modern optoelectronics.  相似文献   

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