真空蒸镀氟化镁增透膜的厚度与均匀性控制

基于光学增透膜与真空蒸发镀膜的基本原理,从MgF2原料状态、原料蒸镀质量、蒸发源与基片间距等方面,研究了热电阻和电子束蒸镀的MgF2薄膜厚度与其均匀性的控制工艺,以制备出高效的MgF2增透膜。结果表明:对于颗粒度较小或熔点较低的原料,热电阻比电子束蒸镀更易控制,并可避免原料污染;原料实际蒸镀质量与膜厚呈较好的线性关系;实际蒸镀质量相同的多晶颗粒与粉末状原料相比,前者蒸镀膜更厚;基片置于旋转工转盘中心比其侧部区域蒸镀膜更厚、均匀性更好。最后利用旋转球面夹具的小平面源蒸发模型很好地解释了上述实验结果。     

3.6m大口径镀膜机膜厚均匀性分析

分别建立了旋转平面与球面夹具配置下的薄膜膜厚均匀性理论计算模型,对3.6 m大口径镀膜机下直径为2.6 m基板的膜厚均匀性进行了研究.为了改善膜厚均匀性,分别采用两个蒸发源和三个蒸发源进行蒸镀.薄膜的膜厚不均匀性通过理论计算模型进行优化计算得到.对于两个蒸发源,分别得到了两旋转夹具配置下的最优几何配置,对应的膜厚不均匀...     

建筑玻璃真空蒸镀薄膜厚度的理论计算

本文对建筑玻璃大面积多蒸发源真空蒸镀的膜厚均匀性进行了理论分析，给出了膜厚及其分布的计算公式和计算实例．对如何提高薄膜的均匀性进行了讨论．     

蒸发源位于半球面正下方膜厚分布理论研究

对蒸发源位于非平面基底一半球面正下方时膜厚均匀性进行了理论研究。通过建立无量纲模型计算了此种几何配置下,半球表面在两种常见理想蒸发源下各位置的膜厚公式以及膜厚分布方程。选择基底与蒸发源问较大的距离,可获得更大的可镀膜区域,同时该距离对基底上镀制的膜层厚度分布影响也较大。最后对实用蒸发源的发射系数,对该几何配置下半球面膜厚分布影响进行了理论研究。     

LAMOST子镜真空镀铝系统中的多点蒸发源建模分析

选取多个钨丝均匀的分布在一个圆周上,形成一个环状蒸发源.把每个钨丝看成一个标准的点蒸发源,与LAMOST子镜建立模型形成一个蒸发沉积系统.把镜面离散成一个致密的具有特定坐标点的阵列,把每个点蒸发源对镜面上特定点的膜层厚度的贡献相加,从而得出膜层厚度的采样值.文章分析了点源的个数、圆环的半径、源基距、以及蒸发源的发射特性对膜层均匀性的影响,最终确定选取了12个钨丝,把源基距定为0.8 m,把圆环半径定为0.55 m.设计了相应的挡板实现了膜层不均匀性低于5%的要求.     

带材真空镀铝设备蒸发源与最佳膜厚分布的探讨

长幅带材真空镀铝的膜厚均匀性问题,一直是研究真空镀铝的中心问题,尤其是镀制电容器膜。本文通过计算和比较,对蒸发源的选择及蒸发源的最佳排列与膜厚分布等问题进行探讨。     

四坩埚磁偏转电子束蒸发源

在真空镀膜设备中,电子束蒸发源虽远较电阻加热式蒸发源复杂,但因其能蒸镀难熔材料,膜层纯度高,而优于电阻加热蒸发源。到七十年代中期,磁偏转电子束蒸发源蒸镀提高了淀积率,并克服了环形枪蒸镀时易发生气体放电、功率较小,以及直枪式蒸发源占用空间大,x射线二次电子损伤大的缺点,而获得广泛的应用,特别在集成电路工艺中应用,达到了很好的效果。使用多坩埚电子束蒸发源,可以在一次抽真空的过程中镀制多层膜或合金膜。     

OVPD技术在OLED蒸镀装置中的应用

将OVPD(有机气相沉积)技术应用于OLED(有机电致发光显示器件)蒸镀装置中,研制了一台实验设备,并通过实验验证了其可行性和可控性.该技术克服了常规点源蒸发所产生的有机材料利用率低、膜层均匀性差、不适合大基片镀膜等缺点,为OLED量产设备的研制奠定了基础.     

平板玻璃真空镀膜机蒸发舟源新佳分布的计算

本文针对平板玻璃蒸发镀膜机中的膜厚分布问题，详细讨论了如何通过合理布置蒸发舟源的空间位置，获得理想均匀的膜厚分布。具体介绍了膜厚计算的模型、公式及计算程序流程图，最佳蒸距的选择和最佳源间距的计算方法，并给出了一些最优化计算的结论、曲线和设计实例，可供设计中参考利用．     

真空热沉积过程中有机薄膜生长的模拟研究

利用Monte Carlo方法对真空蒸发系统下的有机薄膜生长过程进行了模拟.在该系统模型中,Ns个点蒸发源均匀分布在半径为R的圆周上,基板相对蒸发源所在平面距离为d.利用该模型分析了膜厚分布以及点蒸发源个数Ns、蒸发源与基板的相对位置R和d对薄膜厚度均匀性的影响,并通过实验对仿真结果进行了验证.结果显示,增加蒸发源个数、增大相对基板位置均可以有效提高薄膜的均匀性,测试发现薄膜样品的精度MaX-Min均保持在5%左右.     

挖坑效应对球形夹具下电子束蒸发沉积薄膜厚度均匀性的影响

厚度均匀性是薄膜制备过程中不可忽视的薄膜特性,厚度不均匀会导致薄膜成品率降低.熔融性比较差的镀膜材料在蒸发过程中以直接气化为主,挖坑效应比较明显.此时,在分析薄膜厚度均匀性时,蒸发源发射特性不随时间变化的假设不再合理.细分蒸发源为无数个小的薄板蒸发源,建立了镀膜材料出现挖坑效应时薄膜厚度均匀性的分析模型.结果表明,在所选镀膜机结构参数下,挖坑效应对薄膜厚度均匀性影响明显;但挖坑效应并不总导致薄膜厚度均匀性变差,设计合适的镀膜室结构以及薄膜制备工艺参数,可借助挖坑效应在一定程度上改善薄膜厚度均匀性.采用易于出现挖坑效应的材料作为镀膜材料时,该研究对设计薄膜沉积工艺参数具有指导性意义.     

小圆平面靶磁控溅射镀膜均匀性研究

本文从圆平面靶磁控溅射的原理出发,针对圆形平面靶面积小于基片面积的特点进行分析,建立膜厚分布的数学模型,并利用计算机进行模拟计算,目的在于探寻平面靶材面积小于基片面积时影响膜厚均匀性的因素。模拟计算的结果表明:基片偏心自转时,靶基距和偏心距对膜厚分布均有影响。偏心距一定时,随着靶基距的增大,薄膜厚度变小,膜厚均匀性有提高的趋势;靶基距一定时,随着偏心距的增大,膜厚均匀性先变好后变差。当基片自转复合公转时,随着转速比的增大,膜厚均匀性逐渐变好,转速比增大到一定程度后,它对膜厚均匀性的影响逐渐变小。圆形平面靶的刻蚀环范围的变化对薄膜的均匀性有一定的影响。这些理论为小圆平面磁控溅射系统的设计和实际应用提供了理论依据。     

脉冲电弧源的发射特性建模

脉冲电弧源是脉冲电弧离子镀方法制备薄膜的重要部件，其发射特性是影响薄膜均匀性的重要因素，本文从理论出发，建立脉冲电弧源发射特性的数学模型，编程计算得到理论的均匀性曲线，与实际的沉积薄膜厚度的均匀性对比，结果表明：脉冲电弧源的蒸发特性可以等效于多个面源的叠加，每一个面源发射的离子密度空间分布符合余弦定律。     

Investigation in the Effects of Configuration Parameters on the Thermal Behavior of Novel Conical Friction Plate in Continuously Sliding Condition

To investigate the effects of configuration parameters and operation condition on the thermal behavior of novel conical friction plate, a three-dimensional finite element model of conical friction plate is established for numerical simulation. The conical surface configuration and friction heat generation of novel conical friction surfaces are discussed. The results indicate that the thermal behavior of the conical friction plate during continuously sliding period is influenced by the conical surface configuration. Maximum temperature occurs in the conical friction plate with cone angle of 24°. The maximum temperature value of friction plate is increased 7.4°C, when cone depth increases from 3 mm to 4 mm. Thermal behavior investigation should be carried out when optimize conical surface configuration     

Conical electromagnetic radiation in the Kretschmann attenuated total reflections configuration

The polarization of the conical electromagnetic radiation produced by the scattering of surface plasmons by film roughness in the Kretschmann attenuated total reflection configuration was measured. The conical radiation was p polarized in the plane of observation. A tip of a scanning tunnel microscope was brought close to the film surface to act as a plasmon-scattering center. From a measurement of the conical radiation generated by this single-scattering center, it was found that plasmons tend to be forward scattered. Using a scanning plasmon optical microscope (SPOM), we imaged plasmon-scattering surface irregularities, which act in a first approximation as independent conical centers, along with interferences caused by these fixed conical radiation centers and the moving conical radiation center (the SPOM probe tip). The possibility of detecting localized surface plasmons with a SPOM is discussed.     

Simulation of the organic thin film thickness distribution for multi-source thermal evaporation process

A model of multi-source thermal evaporation process was proposed to achieve higher deposition rate and uniformity of organic thin film. In this model, several point type sources were uniformly distributed around a circle and evaporated simultaneously to form a surface-like source. Based on the Monte Carlo method, the evaporation process was simulated, and the effect of the number of point type sources, circle radius and source-substrate distance on the uniformity was analyzed. Based on the method proposed in this paper, the uniformity of the thickness in the organic layer was successfully controlled in 5%.     

Substrate geometry effect on the uniformity of amorphous carbon films deposited by unbalanced magnetron sputtering

A chromium doped amorphous carbon (a-C) film was deposited by an unbalanced magnetron sputtering. A special designed double-V shaped stainless steel model in simulating a plastic injection mold gateway was used as the substrate to investigate the geometric effect on the uniformity of the film. It was found that, on both the side wall and bottom plane of the double-V shaped substrate, the film properties strongly depended on a geometric parameter, geometric aspect ratio, defined as the depth over width of the simulated gateway at the points under measurement. With the increase of the aspect ratio, i.e. approaching to the narrow end and/or closer to the bottom plane of the gateway, the film thickness and hardness decreased and the intensity ratio of the Raman sub-bands D over G increased. With the increase of the aspect ratio, the micro hardness of the a-C film decreased far more significantly on the side wall than that on the bottom plane. With increasing working gas pressure, the film thickness decreased consistently, and the hardness uniformity on both the side wall and bottom plane was improved. When the substrate negative bias voltage was changed from −70 to −100 V, the film uniformity (for both the thickness and hardness) was improved on the bottom plane, but degraded on the side wall.     

用特殊辅助面解画法几何交线问题

提出利用特殊位置辅助面截交线投影的特点(45°投影面垂直面、底角45°圆锥面及其它特殊位置垂直面)求解画法几何中的截交线与相贯线(平面立体截交线、圆柱与圆锥的截交线;圆柱与圆柱,圆柱与圆锥的相贯线)以及直线的落影、回转曲面立面阴影的作图方法。     

Evaluation of uniformity for organic film evaporation using two dimensional different apertures

We have demonstrated an evaporation method to obtain a uniform organic thin-films with designed evaporation source which have array of two dimensional apertures of different sizes above an evaporation source optimized the distance between evaporation source and substrate, a uniform film was formed. Experimental results varying with position of the substrate are fitted to the theory of evaporation and the simulation of film uniformity using the uniform evaporation method was examined. In the simulation, different diameters of each apertures and distance between the evaporation source and the substrate were investigated. When the distance between the evaporation source and the substrate was 7 mm, adjusting the diameters of each apertures, the simulation uniform of film thickness of ±3.9 and ±1.0% at array of 3 × 3 and 9 × 9 apertures of different sizes was achieved in simulation, respectively. Moreover, in the evaporation experiment using array of 3 × 3 apertures, the uniformity of ±6.5% was obtained by photoluminescence measurement.