Ladder-like metal oxide nanowires: Synthesis,electrical transport,and enhanced light absorption properties

Transparent metal oxide nanowires （NWs） have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a facile chemical vapor deposition （CVD） method. Their structural features and growth mechanism are demonstrated in detail by using the ladder-like In2O3 NWs as an example. Single ladder-like NW-based field-effect transistors （FETs） and photodetectors （PDs） of SnO2 were fabricated in order to investigate their electrical transport and light absorption properties. Compared with straight NW-based FETs which operate in an enhancement mode （E-mode）, FETs build on ladder-like NWs operate in a depletion mode （D-mode）. The ladder-like NWs also give higher carrier concentrations than conventional single nanowires. Finite-difference time-domain （FDTD） simulations have been performed on the ladder-like NWs and the results reveal a great enhancement of light absorption with both transverse-electric （TE） and transverse-magnetic （TM） polarization modes, which is in good agreement with the experimental results.     

A liquid phase anion-exchange approach to high-quality all-inorganic halide perovskite micro- and nanowires

All-inorganic halide perovskite nanowires (NWs) are promising materials due to they have broad application prospects in the field of optoelectronics, with mixed-halide perovskite nanowires can change the optoelectronic properties by adjusting the halide ratio. Here, we experimentally investigated the two-process governed anion-exchange reaction in single-crystalline CsPbX₃ micro- and nanowires. The critical parameters affecting the outcome of the reaction are identified as the reaction temperature, reaction time, and precursor concentrations. Upon examining the photoluminescence and morphology of the NWs, high-quality NWs were obtained by optimizing these critical parameters. The bandgap of the NWs can be tuned over the entire visible spectra (430–700 nm). In addition, photodetectors incorporating single NWs were fabricated, which demonstrated excellent responsivity under illumination. Our results expand the validity of liquid-phase anion exchange to the microscale, and lay the basis for liquid-processed optoelectronics and displays.

     

Fabrication of CoZn alloy nanowire arrays: Significant improvement in magnetic properties by annealing process

Highly ordered arrays of Co_1−xZn_x (0 ≤ x ≤ 0.74) nanowires (NWs) with diameters of ∼35 nm and high length-to-diameter ratios (up to 150) were fabricated by co-electrodeposition of Co and Zn into pores of anodized aluminum oxide (AAO) templates. The Co and Zn contents of the NWs were adjusted by varying the ratio of Zn and Co ion concentrations in the electrolyte. The effect of the Zn content, electrodeposition conditions (frequency and pH) and annealing on the structural and magnetic properties (e.g., coercivity (Hc) and squareness (Sq)) of NW arrays were investigated using X-ray diffraction (XRD), scanning electron microscopy, electron diffraction, and alternating gradient force magnetometer (AGFM). XRD patterns reveal that an increase in the concentration of Zn ions of the electrolyte forces the hcp crystal structure of Co NWs to change into an amorphous phase, resulting in a significant reduction in Hc. It was found that the magnetic properties of NWs can be significantly improved by appropriate annealing process. The highest values for Hc (2050 Oe) and Sq (0.98) were obtained for NWs electrodeposited using 0.95/0.05 Co:Zn concentrations at 200 Hz and annealed at 575 °C. While the pH of electrolyte is found to have no significant effect on the structural and magnetic properties of the NW arrays, the electrodeposition frequency has considerable effects on the magnetic properties of the NW arrays. The changes in magnetic property of NWs are rooted in a competition between shape anisotropy and magnetocrystalline anisotropy in NWs.     

Thermal conductivity of ge and ge-si core-shell nanowires in the phonon confinement regime

Heterostructure core-shell semiconductor nanowires (NWs) have attracted tremendous interest recently due to their remarkable properties and potential applications as building blocks for nanodevices. Among their unique traits, thermal properties would play a significant role in thermal management of future heterostructure NW-based nanoelectronics, nanophotonics, and energy conversion devices, yet have been explored much less than others. Similar to their electronic counterparts, phonon spectrum and thermal transport properties could be modified by confinement effects and the acoustic mismatch at the core-shell interface in small diameter NWs (<20 nm). However, fundamental thermal measurement on thin core shell NWs has been challenging due to their small size and their expected low thermal conductivity (κ). Herein, we have developed an experimental technique with drastically improved sensitivity capable of measuring thermal conductance values down to ～10 pW/K. Thermal conductivities of Ge and Ge-Si core-shell NWs with diameters less than 20 nm have been measured. Comparing the experimental data with Boltzmann transport models reveals that thermal conductivities of the sub-20 nm diameter NWs are further suppressed by the phonon confinement effect beyond the diffusive boundary scattering limit. Interestingly, core-shell NWs exhibit different temperature dependence in κ and show a lower κ from 300 to 388 K compared to Ge NWs, indicating the important effect of the core-shell interface on phonon transport, consistent with recent molecular dynamics studies. Our results could open up applications of Ge-Si core shell NWs for nanostructured thermoelectrics, as well as a new realm of tuning thermal conductivity by "phononic engineering".     

Mass Transport Determined Silica Nanowires Growth on Spherical Photonic Crystals with Nanostructure‐Enabled Functionalities

A robust and facile method has been developed to obtain directional growth of silica nanowires (SiO₂NWs) by regulating mass transport of silicon monoxide (SiO) vapor. SiO₂NWs are grown by vapor–liquid–solid (VLS) process on a surface of gold‐covered spherical photonic crystals (SPCs) annealed at high temperature in an inert gas atmosphere in the vicinity of a SiO source. The SPCs are prepared from droplet confined colloidal self‐assembly. SiO₂NW morphology is governed by diffusion‐reaction process of SiO vapor, whereby directional growth of SiO₂NWs toward the low SiO concentration is obtained at locations with a high SiO concentration gradient, while random growth is observed at locations with a low SiO concentration gradient. Growth of NWs parallel to the supporting substrate surface is of great importance for various applications, and this is the first demonstration of surface‐parallel growth by controlling mass transport. This controllable NW morphology enables production of SPCs covered with a large number of NWs, showing multilevel micro‐nano feature and high specific surface area for potential applications in superwetting surfaces, oil/water separation, microreactors, and scaffolds. In addition, the controllable photonic stop band properties of this hybrid structure of SPCs enable the potential applications in photocatalysis, sensing, and light harvesting.     

Highly Stretchable Metallic Nanowire Networks Reinforced by the Underlying Randomly Distributed Elastic Polymer Nanofibers via Interfacial Adhesion Improvement

On‐skin electronics require conductive, porous, and stretchable materials for a stable operation with minimal invasiveness to the human body. However, porous elastic conductors that simultaneously achieve high conductivity, good stretchability, and durability are rare owing to the lack of proper design for good adhesion between porous elastic polymer and conductive metallic networks. Here, a simple fabrication approach for porous nanomesh‐type elastic conductors is shown by designing a layer‐by‐layer structure of nanofibers/nanowires (NFs/NWs) via interfacial hydrogen bonding. The as‐prepared conductors, consisting of Ag NWs and polyurethane (PU) NFs, simultaneously achieve high conductivity (9190 S cm^?1), high stretchability (310%), and good durability (82% resistance increase after 1000 cycles of deformation at 70% tensile strain). The direct contact between the Ag NWs enables the high conductivity. The synergistic effect of the layer‐by‐layer structure and good adhesion between the Ag NWs and the PU NFs enables good mechanical properties. Furthermore, without any adhesive gel/tape, the conductors can be utilized as breathable strain sensors for precise joint motion monitoring, and as breathable sensing electrodes for continuous electrophysiological signal recording.     

Morphology-controlled one-dimensional ZnO nanostructures with customized Ga-doping

Enhanced functionality of the nanostructure-based devices can be achieved by customizing the doping, thereby managing the electrical properties of the nanostructures. We have optimized the synthesis condition of the ZnO nanowires (NWs) using hot-walled pulsed laser deposition (HW-PLD) that features the facilitated kinetic energy control of the laser-ablated particles. The electrical properties of the NWs have been managed by doping control while maintaining the NW morphologies. 1, 3, and 5 wt.% Ga concentration in the NWs is evaluated directly with energy dispersive spectrometer (EDS), and the exciton peak shifts are measured with room temperature photoluminescence (PL) to find the correlation between the concentration and the shifts. n-type Ga-doping status has been verified with low temperature PL to find the donor-bound exciton peaks. As for the morphology diversification, we have acquired both zigzag-shaped NWs and nanohorns using the same HW-PLD.     

Microhardness,chemical etching,SEM, AFM and SHG studies of novel nonlinear optical crystal – l-threonine formate

The crystal l-threonine formate, an organic NLO crystal was synthesized from aqueous solution by slow evaporation technique. The grown crystal surface has been analyzed by scanning electron microscopy (SEM), chemical etching and atomic force microscopy (AFM). SEM analysis reveals pyramidal shaped minute crystallites on the growth surface. The etching study indicates the occurrence of etch pit patterns like striations and step like pattern. The mechanical properties of LTF crystals were evaluated by mechanical testing which reveals certain mechanical characteristics like elastic stiffness constant (C₁₁) and young's modulus (E). The Vickers and Knoop microhardness studies have been carried out on LTF crystals over a range of 10–50 g. Hardness anisotropy has been observed in accordance with the orientation of the crystal. AFM image shows major hillock on growth surface. The second harmonic generation (SHG) efficiency has been tested by the Kurtz powder technique using Nd:YAG laser and found to be about 1.21 times in comparison with standard potassium dihydrogen phosphate (KDP) crystals.     

Mechanical properties of ZnO nanowires under different loading modes

A systematic experimental and theoretical investigation of the elastic and failure properties of ZnO nanowires (NWs) under different loading modes has been carried out. In situ scanning electron microscopy (SEM) tension and buckling tests on single ZnO NWs along the polar direction [0001] were conducted. Both tensile modulus (from tension) and bending modulus (from buckling) were found to increase as the NW diameter decreased from 80 to 20 nm. The bending modulus increased more rapidly than the tensile modulus, which demonstrates that the elasticity size effects in ZnO NWs are mainly due to surface stiffening. Two models based on continuum mechanics were able to fit the experimental data very well. The tension experiments showed that fracture strain and strength of ZnO NWs increased as the NW diameter decreased. The excellent resilience of ZnO NWs is advantageous for their applications in nanoscale actuation, sensing, and energy conversion.      

Rapid growth of Fe3O4 nanowires with oxide assisted vapor-solid process

Oxide assisted vapor-solid (VS) process has been used for rapid crystal growth of Fe₃O₄ nanowires (NWs) on Fe:Ni (1:1) alloy substrate. Oxide layers have been created initially on the substrate by heating it inside the quartz tube of a single tube furnace at 600 °C in air. On rising the temperature of the chamber to 700 °C in vacuum and flowing argon (Ar) at a flux 10 sccm for 20 min NWs of lengths up to 10 μm and average width 120 nm can be grown on the oxidized substrate. Capillarity model and resident time theorem have been combined to analyze the nanowire growth process. Energy dispersive X-ray (EDX), X-ray diffraction (XRD) and vibrating sample magnetometry (VSM) studies show that the product formed are Fe₃O₄ NWs which are magnetic materials.     

Electrical properties of C19H20N2O4SW based molecular-materials thin films prepared by electrodeposited technique

Semiconductor molecular-material thin films of Fischer carbene tungsten(0) have been prepared by electro-deposition in the electrochemical module of the atomic force microscope (AFM). This use of the AFM is proposed as a more efficient way to generate molecular materials, as it permits thin-film synthesis to be monitored and manipulated before characterization. The films thus obtained were characterized by infrared (FTIR), AFM and energy dispersive spectroscopy. The molecular material thin films exhibit the same intra-molecular bonds and the chemistry composition as the original compounds. The effect of temperature on conductivity was also measured in these samples: its behavior found as pertaining to a semiconducting material. The activation energies of thin films are determined from Arrhenius plots with these energies being within the range from 0.4 to 1.82 eV. The electrical transport properties for the thin films were determined by their chemical structure.     

High molecular weight polyethylene nanospheres: synthesis physical and mechanical properties

The high molecular weight (MW) polyethylene (PE) particles of particle size varied from macro to micron to nanometer were synthesized by Grignard reagent. The microscopy analysis (scanning electron microscope, SEM; transmission electron microscope, TEM; and atomic force microscope, AFM) shows the spherical shape of PE particles. The effects of particle size, varies from macro to nanometer scale on crystal structure, crystallinity (chic), glass transition temperature (Tg), melting temperature (Tm), surface roughness and mechanical properties were studied. Differential scanning calorimetry (DSC) experiments show that the nanoparticles of PE are highly crystalline (chic approximately equal 72%). The crystal length of PE nanoparticles is found to be approximately 14 A. Although the Gibbs-Thomson equation is explained the depression of melting temperature (DeltaTm) by 5 degrees C, the impervious results of Tg are still not fully understood. The low roughness value (2 A) proves the presence of "atomic-scale-chain" folding at the surface of PE nanoparticles. A novel protocol is developed, and the elastic modulus of individual nanospherical PE particles is computed from 'force-distance' mapping curves of AFM. Hemispherical tungsten (W) tip was fabricated from focused ion beam and used as an indenter to measure the mechanical properties. It is found that the nano sized PE particles have higher elastic modulus (E = 1.2-1.4 GPa) compared to the bulk or macro sized PE (E = 0.6-0.7 GPa). The results corroborate the robustness of our experiments, since, the analogous results for macro sized particles match well with the literature.     

Effect of the doped nitrogen on the optical properties of β-Ga2O3 nanowires

In this study, optical properties of the nitrogen-doped β-Ga₂O₃ nanowires (N-doped β-Ga₂O₃ NWs) were synthesized by exposing β-Ga₂O₃ NWs under high input power nitrogen plasma (2 kW), using a microwave plasma enhanced chemical vapor deposition (MPECVD) system. The nitrogen contents in the NWs were as-prepared about 7.4, 8.9, 9.7, 13.9, 19.3, and 26.6 at.%, respectively. Low temperature (10 K) cathodoluminescence (CL) spectra exhibit significantly different optical properties for the different nitrogen contents. The CL result of the N-doped β-Ga₂O₃ NWs (210 s N₂ plasma treatment) exhibited four distinct emission peaks at 378, 516, 759, and 970 nm. The possible light emission mechanism including the effect of the nitrogen dopant was discussed.     

Growth direction modulation and diameter-dependent mobility in InN nanowires

Diameter-dependent electrical properties of InN nanowires (NWs) grown by chemical vapor deposition have been investigated. The NWs exhibited interesting properties of coplanar deflection at specific angles, either spontaneously, or when induced by other NWs or lithographically patterned barriers. InN NW-based back-gated field effect transistors (FETs) showed excellent gate control and drain current saturation behaviors. Both NW conductance and carrier mobility calculated from the FET characteristics were found to increase regularly with a decrease in NW diameter. The observed mobility and conductivity variations have been modeled by considering NW surface and core conduction paths.     

Synthesis and structural-optical properties of Ga-doped ZnO nanowires by hot-walled pulsed laser deposition method

Well-aligned single-crystalline zinc oxide (ZnO) and Ga doped ZnO (GZO) NWs (NWs) were successfully fabricated on Au film catalyzed sapphire substrate using vapor-liquid-solid (VLS) method in hot-walled pulsed laser deposition (HW-PLD). The structural and optical properties of Ga doped ZnO NWs have been investigated depending on various concentration of Ga dopants in ZnO NWs. As increasing Ga concentration, stacking faults were observed by using FE-SEM and an exciton bound to a neutral donor (D(0)X) peak was clearly observed by using PL spectra. From the structural and optical properties, the ZnO NWs by doping could be application to electronic and optoelectronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and nano-sensors.     

Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on γ-LiAlO₂ (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 °C using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [100] direction with steeply tapering tips, and have triangular cross-sections with widths of 50–100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor-liquid-solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process. The aligned GaN NWs show blue-yellow emission originating from defect levels, residual impurities or surface states of the GaN NWs, and have potential applications in nanotechnology.     

Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties

Large-area patterned boron carbide nanowires (B₄C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B₄C NWs is about 50 nm, with a mean length of 20 ??m. The B₄C NWs have a single-crystal structure and conductivities around 5.1 × 10^?2 ??^?1·cm^?1. Field emission measurements of patterned B₄C NWs films show that their turn-on electric field is 2.7 V/??m, lower than that of continuous B₄C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B₄C NWs are a promising candidate for flexible cold cathode materials.      

Room temperature photoluminescence properties of CuO nanowire arrays

Cupric oxide (CuO) nanowire arrays were synthesized by a simple and cost-effective thermal oxidation method. Optical properties of CuO nanowires (NWs) have been investigated through photoluminescence (PL) measurements at room temperature. CuO NWs appear several defects and vacancies related emission bands which usually appear only at low temperatures. Blue–green light emission with peaks at around 403, 474 and 489 nm is obtained from CuO NWs. In addition, the PL studies of CuO at room temperature reveal three emission peaks at around 713, 735 and 758 nm in the red and near infrared region. The study is attributed to understand the optical properties of CuO NWs and the design of CuO-based photo-electronic devices.     

Pd-nanoparticle-decorated ZnO nanowires: ultraviolet photosensitivity and photoluminescence properties

ZnO nanowires (NWs) have been decorated with Pd nanoparticles of sizes less than 10 nm (Pd-ZnO NWs) via a chemical solution route. The microstructural characterizations have been done using field emission scanning electron and high-resolution transmission electron microscopes. The effects of attaching Pd nanoparticles to the walls of ZnO NWs have been investigated by studying the ultraviolet (UV) photosensitivity and photoluminescence (PL) properties. The surface-modified NWs show a UV photosensitivity more than double and a response seven times faster compared to the bare NWs. The photocarrier relaxation under the steady UV illumination condition is quite different in Pd-ZnO NWs. The higher and faster photosensitivity has been explained on the basis of photocarrier transfer from the conduction band of ZnO to the Fermi level of Pd and subsequent electron trapping by the adsorbed O(2) molecules on the NWs' surface, which have been presented through a proposed model. The PL spectrum of Pd-ZnO NWs shows that the intensities of the band-edge and defect-related emissions decrease and increase, respectively, due to Pd anchoring, the effect being pronounced as the density of Pd nanoparticles increases.     

Reinforcements affect mechanical properties and wear behaviors of WC clad layer by gas tungsten arc welding

This work deals with the surface analysis, mechanical properties and wear performances of the clad layer, which is made from tungsten carbide (WC) powders on SKD61 die steel by the gas tungsten arc welding method. According to the experimental results, due to the high hardness and elastic modulus reinforcements (Fe₃W₃C and M₇C₃) existing in the WC clad layer, the WC clad specimen has excellent wear performance at different sliding speeds.According to the wear analysis, wear behaviors of the WC clad layer are two-body abrasion and oxidation wear. In addition, oxidation wear dominates the wear behaviors of the SKD61 die steel specimen at different sliding speeds.