Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties |
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| Authors: | Yuan Huang Fei Liu Qiang Luo Yuan Tian Qiang Zou Chen Li Chengmin Shen Shaozhi Deng Changzhi Gu Ningsheng Xu Hongjun Gao |
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| Affiliation: | 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
2. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, China
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| Abstract: | Large-area patterned boron carbide nanowires (B4C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B4C NWs is about 50 nm, with a mean length of 20 ??m. The B4C NWs have a single-crystal structure and conductivities around 5.1 × 10?2 ???1·cm?1. Field emission measurements of patterned B4C NWs films show that their turn-on electric field is 2.7 V/??m, lower than that of continuous B4C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B4C NWs are a promising candidate for flexible cold cathode materials.  |
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