硅微电容传声器的防粘连结构

粘连是硅微电容传声器释放牺牲层过程中不容忽视的一个严重问题,大大降低了器件的成品率.在背板上制备微突出(bump)结构,可以较彻底阻止粘连现象发生,提高传声器的成品率.以往的防粘连微突出结构大都制备在上背板结构硅微电容传声器的背板上,它制备工艺简单,但是无法得到厚背板,形成“软“背板,影响传声器的性能.本文提出在下背板上制备防粘连微突出结构,因为其可以做的较厚,避免了软背板的缺点,这时利用氮化硅形成微突出,运用该法制备的硅微电容传声器有效的防止粘连现象发生.对该方案还可进行改进,利用重硼掺杂单晶硅形成微突出,该工艺流程重复性好.最终我们研制成具有防粘结构的硅微电容传声器.     

基于硅膜的电容式高灵敏度低频传声器研究

在电容式传声器相关理论以及方形膜研究的基础上,采用圆形硅膜作为振动膜,研制了电容式低频传声器,该传声器直接采用音频传声器结构,不同于以往的电容式低频传声器结构.首先进行了等效结构参数的仿真,为实验提供了理论支持;然后,制备了直径为0.08 m,厚度约60μm的圆形硅膜,并以此硅膜为振动膜研发了一种高灵敏度的低频传声器,其中,两极板间的气隙厚度约为100 μm.测试表明,当偏置电压为4.5 V时,该传声器具有较高的灵敏度,100 Hz处的灵敏度约为-27dB,通频带(20～300 Hz)平坦,低频响应部分(0～20 Hz)需要改进方法进一步测试.     

基于倾斜A1N薄膜的体声波质量传感器的制备及性能分析

提出通过改变溅射气压获得倾斜于C轴的A1N薄膜的制备方法,探讨了倾斜A1N薄膜的生长机理.以3对交替沉积的Ti-MD金属层为布拉格声学反射层,采用MEMS工艺制备了基于倾斜A1N薄膜的、以剪切模式振动的体声波液体传感器,并对器件的S11参数进行测试分析,得到传感器的中心频率为0.78GHz,表明该器件在生物液相检测领域具有一定的应用前景.     

基于永磁薄膜的MEMS磁传感器设计与制作

提出了一种基于永磁薄膜的新型MEMS磁传感器,磁传感器由MEMS扭摆、CoNiMnP永磁薄膜和差分检测电容等部分组成。分析了磁传感器的磁敏感原理和电容检测原理,提出了器件的结构参数并对器件进行了模态仿真。利用MEMS加工技术成功制作了MEMS磁传感器样品,并进行了测试。测试结果表明:得到的MEMS磁传感器的电容灵敏度可达到27.7 fF/mT,且具有良好的线性度。根据现有的微小电容检测技术,传感器的磁场分辨率可达到36 nT。     

基于倾斜AlN薄膜的体声波质量传感器的制备及性能分析

提出通过改变溅射气压获得倾斜于C轴的AlN薄膜的制备方法,探讨了倾斜AlN薄膜的生长机理。以3对交替沉积的Ti—Mo金属层为布拉格声学反射层,采用MEMS工艺制备了基于倾斜AlN薄膜的、以剪切模式振动的体声波液体传感器,并对器件的S11参数进行测试分析,得到传感器的中心频率为0.8GHz,表明该器件在生物液相检测领域具有一定的应用前景。     

微机械薄膜应力的在线测试结构

微机械薄膜应力对MEMS器件有较大的影响，因此应力测量对于工艺监控和MEMS器件设计是必须的。介绍了微机械薄膜应力的在线测试结构与方法，详细分析了各种方法的特点。对于MEMS薄膜应力测试结构设计有一定的参考价值。     

MEMS结构中碳纳米管的电泳沉积及其场发射特性研究

利用电泳沉积的方法在MEMS结构特定位置上组装碳纳米管薄膜,以此作为发射体研制基于碳纳米管场发射的传感器,并对其场发射进行了测试和分析.电镜观测与场发射实验结果表明,利用电泳沉积方法可以只在MEMS结构的特定位置沉积碳纳米管薄膜,对于4μm的发射间隙、该薄膜的场发射开启电压约为3.6V～4V,发射电压20V时的发射电流可至28μA.这种“post-MEMS“的碳纳米管薄膜组装方法具有工艺简单的特点,同时避免了碳纳米管生长对MEMS工艺环境以及器件的污染、破坏,实现了纳米材料组装与MEMS工艺的兼容.     

一种新型CMOS电容式绝对压力传感器的设计

提出了一种新型的采用标准CMOS工艺结合MEMS后处理工艺加工的电容式绝对压力传感器.传感器结构部分是由导体/介质层/导体组成的可变电容器.电容的上下极板分别为CMOS工艺中的多晶硅栅和n阱硅,中间介质层为栅氧化层.在CMOS工艺加工完之后,利用选择性的体硅腐蚀、pn结自停止腐蚀以及阳极键合等MEMS后处理工艺来得到传感器结构.与传统的电容式压力传感器相比,这种结构具有更大的初始固有电容,这样可以抑制寄生电容的影响,从而简化检测电路的设计.文中,应用多层膜理论模型分析了传感器的结构,并利用ANSYS有限元分析对模型进行了验证,并利用电容变化模型分析了传感器的灵敏度.对于边长为800 μm的敏感方膜,初始电容值为1 104pF,传感器灵敏度为46 fF/hPa.同时,本文给出了传感器的电容检测电路的设计.     

用于器件级真空封装的MEMS加速度传感器的设计与制作

设计了一种可用于器件级真空封装的三明治电容式MEMS加速度传感器.该传感器被设计为四层硅结构,其中上下两层为固定电极,中间两层为硅-硅直接键合的双面梁-质量块结构的可动电极.利用自停止腐蚀工艺在中间质量块键合层上腐蚀出2个深入腔内的V型抽气槽,使得MEMS器件在后续的封装中能够实现内部真空.为防止V型抽气槽在划片中被水或硅渣堵塞,采用双面划片工艺.划片后,器件的总尺寸为6.8mm ×5.6mm ×1.72 mm,其中,敏感质量块尺寸为3.2mm×3.2mm ×0.86mm,检测电容间隙2.1 μm.对器件级真空封装后的MEMS加速度传感器进行了初步测试,结果表明:制作的传感器的谐振频率为861 Hz,品质因数Q为76,灵敏度为1.53 V/gn,C-V特性正常,氦气细漏＜1×10-9 atm-cm3/s,粗漏无气泡.     

基于CNTs/PDMS介电层的柔性压力传感特性研究

提出一种基于MEMS工艺的柔性压力传感器制备方法.采用MEMS工艺制备柔性压力传感器模板,结合纳米压印技术、射频磁控溅射技术和PDMS软光刻工艺在PDMS柔性基底上制备了具有"V"型阵列微结构的Ag薄膜平行板电极,基于碳纳米管(CNTs)/PDMS聚合物的压电容特性,制备出电容式柔性压力传感器.针对不同尺寸的压力传感器进行对比测试,本文制作的压力传感器的灵敏度能够达到3.98% kPa-1,具有良好的重复性,在智能穿戴和电子皮肤等方面有着广阔的应用前景.     

圆形振动膜硅微电容传声器

硅微传声器是一种用MEMS技术制造的、将声信号转换为电信号的声学传感器.该传声器只需五次光刻工艺即可制作完成,其灵敏度在偏置电压为9V时可达15mV/Pa左右,在100Hz～18kHz的范围内的频率响应也较平坦.     

Slotted capacitive microphone with sputtered aluminum diaphragm and photoresist sacrificial layer

In this paper, we have fabricated a new microphone using aluminum (Al) slotted perforated diaphragm and back plate electrode, and photoresist (AZ1500) sacrificial layer on silicon wafer. The novelty of this method relies on aluminum diaphragm includes some slots to reduce the effect of residual stress and stiffness of diaphragm for increasing the microphone sensitivity. The acoustic holes are made on diaphragm to reduce the air damping, and avoid the disadvantages of non standard silicon processing for making back chamber and holes in back plate, which are more complex and expensive. Photoresist sacrificial layer is easy to deposition by spin coater and also easy to release by acetone. Moreover, acetone has a high selectivity to resist compared to silicon oxide and Al, thus it completely removes sacrificial resist without incurring significant damage silicon oxide and Al. The measured zero bias capacitance is 17.5 pF, and its pull-in voltage is 25 V. The microphone has been tested with external amplifier and speaker, the external amplifier was able to detect the sound waves from microphone on speaker and oscilloscope. The maximum amplitude of output speech signal of amplifier is 45 mV, and the maximum output of MEMS microphone is 1.125 μV.     

Modelling of silicon condenser microphones

Several models concerning the sensitivity of capacitive pressure sensors have been presented in the past. Modelling of condenser microphones, which can be considered to be a special type of capacitive pressure sensor, usually requires a more complicated analysis of the sensitivity, because they have a strong electric field in the air gap. It is found that the mechanical sensitivity of condenser microphones with a circular diaphragm, either with a large initial tension or without any initial tension, increases with increasing bias voltage (and the corresponding static deflection), whereas the mechanical sensitivity of other capacitive pressure sensors does not depend on the static deflection. It is also found that the mechanical sensitivity increases with increasing input capacitance of a preamplifier. In addition, the open-circuit electrical sensitivity and, consequently, the total sensitivity too, also increases with increasing bias voltage (or static deflection). However, the maximum allowable sound pressure at which the diaphragm collapses, an effect that has to be taken into account, decreases with increasing static deflection in most cases, ulthnately resulting in an optimum value for the bias voltage. The model for microphones with a circular highly tensioned diaphragm has been verified successfully for two microphone types.     

Development and performance analysis of a low-cost MEMS microphone-based hearing aid with three different audio amplifiers

In this paper, MEMS-based capacitive microphone and low-cost amplifier are designed for low-cost power-efficient hearing aid application. The developed microphone along with the associated circuitry is mounted on a common board in the form of pocket-type (body-worn) device. The designed microphone consists of a flexible circular silicon nitrite (Si₃N₄) diaphragm and a polysilicon-perforated back plate with air as dielectric between them. The incident acoustic waves on the sensor cause deflection of the diaphragm to alter the air gap between the perforated back plate (fixed electrode) and the diaphragm (moving plate) which causes a change in capacitance. The acoustic pressure applied to the microphone is from 0 to 100 Pa for an operating range of 100 Hz–10 kHz which corresponds to the audible frequency range in case of human beings. The main purpose of this work is to increase the longevity of battery used in conventional hearing aids. The designed MEMS microphone with Si₃N₄ diaphragm is capable of identifying acoustic frequencies (100 Hz to 10 kHz) which correspond to a specific change in absolute pressure from 0 to 100 Pa for 2-micron-thick diaphragm with a sensitivity of about 0.08676 mV/Pa. The design of the sensor and the characteristics analysis are performed in FEM-based simulation software, which are later validated in real time. The prototype is designed using MEMS microphone and low-cost amplifier ICs with biasing components in the form of pocket-type (body-worn) hearing aid. In order to study the performance of proposed device, three different market-available amplifiers with controllable gain are used. Finally, the performance of the hearing aid is studied through audio spectrogram analysis to choose the best-suited amplifier among the three.

     

Improvement of the performance of microphones with a silicon nitride diaphragm and backplate

The performance of a single-wafer fabricated silicon condenser microphone has been improved by increasing the stress and the acoustic hole density of the backplate and by decreasing the diaphragm thickness. The best microphones show a sensitivity of 5.0 mV Pa⁻¹, which corresponds to an open-circuit sensitivity of 10 mV Pa⁻¹ for a microphone capacitance of 6.6 pF. The measured frequency response is flat within ±2 dB from 100 Hz to 14 kHz, which is better than the requirements for a hearing-aid microphone. The operating voltage of these microphones is only 5.0 V, which is about 60% of the collapse voltage. The measured noise level of the microphones is 30 dBA SPL, which is approximately as low as required for a hearing-aid microphone ( <29.5 dBA SPL).     

近场声源定位算法研究

麦克风阵列声源定位可为在复杂环境下的说话人的空间位置估计提供有效的解决方案。而传统的应用于雷达,声呐系统领域的阵列信号处理理论已趋于完美,很多应用于阵列信号处理的算法加以修改就可以用来进行麦克风阵列的声源定位。以阵列信号处理中的经典算法MUSIC（Multiple Signal Classification）算法为原型,同时根据语音信号在应用中的特点,介绍了一种基于近场的信号模型,并以此为依据对算法进行改进,使声源定位更加精确。对此算法进行了仿真实验,仿真结果表明,此算法具有良好的定位性能,并随着信号信噪比的上升,性能有所提高。     

管道内检测器声定位技术研究

根据当前对管道检测系统的需求,基于声学原理的管道地面标记技术已成为现今研究的热点与难点。创新地提出将一种高灵敏度、高信噪比的MEMS仿生声矢量传感器应用于管道内检测器的地面标记中。首先介绍了管道内检测器在管道中的发声机理和声音信号特征。由于声波的吸收系数与频率的平方成正比,所以在低频时,声波衰减小,传播更完整。针对单个声矢量传感器,经过仿真分析,单声矢量传感器具有良好的定向能力。最后,进行现场实验,绘制出定向角度表,验证了MEMS声矢量传感器应用于管道内检测器地面标记的可行性。     

Design and fabrication of high performance condenser microphone using C-slotted diaphragm

Microsystem Technologies - In this paper, we present a new design of MEMS condenser microphone using SOI wafer. To improve the performance of the microphone, a perforated diaphragm with C-shape...     

基于多目标遗传算法的Σ-ΔMEMS加速度计优化设计

针对单目标遗传算法设计优化高阶Σ-Δ微机电系统(Σ-ΔMEMS)加速度计时易出现的稳定性问题,提出了基于多目标遗传算法的MEMS加速度计环路滤波器优化设计方法.对三阶非限定性Σ-ΔMEMS加速度计系统,采用多目标遗传算法,将∞—范数和信噪比作为设计目标对其环路滤波器参数进行优化设计.结果表明:相比只针对信噪比进行优化的传统单目标遗传算法,多目标遗传算法在确保高信噪比的同时,提高了系统的相位裕度,使得最大稳定输入信号范围增幅超过1倍,增强了系统对MEMS敏感元件工艺误差的鲁棒性.