磁控共溅射法在聚碳酸酯柔性基底镀TiN研究

在较低的温度下,采用磁控溅射工艺在聚碳酸酯(PC)表面制备了TiN薄膜。应用激光共聚焦显微镜(CLSM)和X射线衍射仪(XRD)等研究了薄膜制备工艺对薄膜的表面微观形貌和晶质成分影响。结果表明:随着基底温度的升高,溅射的薄膜厚度和表面粗糙度增大。溅射的薄膜中,晶粒呈圆锥形,随着N_2含量的增加,溅射的薄膜粗糙度逐渐下降,晶粒较小,分布较均匀。XRD衍射结果表明,溅射的薄膜晶质成分为TiN。     

Cu_3N薄膜制备及其性能研究

Cu3N薄膜的晶面取向、沉积速率、电学特性等性质除与制备方法有关外,还和制备工艺参数有很大关系。溅射法制备Cu3N薄膜工艺参数主要有,混合气体(N2+Ar)中氮气分压比r、基底温度T(℃)、溅射功率P(W)。为了研究Cu3N薄膜的性能与其制备工艺参数之间关系,本文采用反应射频磁控溅射法,在玻璃基底上成功制备了Cu3N薄膜,并研究了工艺参数对其晶面取向、膜厚、电学性能、沉积速率的影响。     

蓝宝石上射频溅射沉积CeO2外延缓冲层

研究了基片温度、溅射功率对采用射频溅射沉积在(1102)蓝宝石基片上的CeO2薄膜生长的影响.过低的沉积温度、溅射功率都会导致CeO2薄膜呈[111]取向生长.在基片温度为700～750 ℃,溅射功率为100～150 W,溅射气压为14 Pa下沉积了高质量[00l]取向的CeO2缓冲层.通过X射线衍射和原子力显微镜表征CeO2薄膜的结构和表面形貌.在最优化条件下制备的CeO2薄膜具有优良的面内面外取向性和平整的表面.在CeO2缓冲层上制得的YBa2Cu3O7-δ(YBCO)超导薄膜为完全[00l]取向,面内取向性良好,并具有优越的电学性能,其临界转变温度(Tc)为89.5 K,临界电流密度Jc(77 K,0T)约为1.8×106 A/cm2,微波表面电阻Rs(77 K,10 GHz)大约为 0.30 mΩ.     

溅射功率对二氧化锆薄膜结构及力学性能的影响研究

为了研究溅射功率对二氧化锆薄膜结构及力学性能的影响,使用射频反应磁控溅射技术在常温下以玻璃为基底使用不同功率镀制了800 nm左右的ZrO2薄膜.利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对样品结晶情况,表面和断面形貌进行表征,结果显示镀制的ZrO2薄膜均为单斜晶体,晶粒尺寸变化不大;随着功率的升高,薄膜从纳米晶结构转变为柱状晶结构.使用纳米压痕仪对薄膜表面进行硬度和弹性模量测试,发现随着功率升高,硬度和弹性模量均出现上升趋势,进一步增加功率出现下降,再上升的变化;在沉积功率为65 W时,可得到厚度为800 nm,弹性恢复量,硬度,弹性模量和塑性指数均最高,分别为88.55％,25.42 GPa,228.6 GPa和0.314的ZrO2薄膜.不同的溅射功率会镀制出不同结构的二氧化锆薄膜,在常温低功率溅射条件下二氧化锆薄膜结构是影响其力学性能的重要因素.     

磁控溅射工艺参数对NdFeB薄膜表面形貌及相结构的影响

本文对直流磁控溅射法制备NdFeB薄膜工艺进行了研究.采用单晶硅为基体材料,在不同的溅射功率、溅射气压、溅射时间等条件下制备薄膜.之后对薄膜进行了SEM、AFM、XRD分析结果表明,NdFeB薄膜沉积速率、表面形貌及相结构与溅射功率、溅射气压、溅射时间密切相关.并根据实验结果给出优化的NdFeB薄膜制备工艺.     

膜厚对直流反应磁控溅射沉积NiO薄膜的结构与电致变色性能的影响

采用直流反应磁控溅射法在FTO玻璃基片上沉积了不同厚度的氧化镍(NiO)薄膜.用X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)、台阶仪、紫外可见分光光度计、电化学工作站,研究了NiO薄膜厚度对其微观结构、形貌,以及电致变色性能的影响.结果表明,随着溅射时间增加,NiO薄膜厚度增加,试样的初始态可见光谱透过率逐渐降低,(200)晶面的XRD衍射峰强度逐渐增加;以1 M KOH溶液作为电解质,随着NiO薄膜厚度增加,薄膜电荷储存量逐渐增大.NiO薄膜厚度为920 nm的试样着色效率最高,达到了23.46 cm2/C;80 nm厚度的薄膜试样光学调制幅度最大,波长550 nm处为40.85％.薄膜越厚,着、褪色时间越长;所有试样着色时间均大于褪色时间,80 nm厚度的薄膜试样的着色、褪色时间最快,分别为4.47 s和2.28 s.     

溅射时间对磁控溅射V2O5离子储存薄膜结构与性能的影响

在ITO玻璃基体上采用磁控溅射法制备用于电致变色玻璃的V2O5离子储存薄膜,重点研究了溅射时间(2～5 h)对V2O5薄膜结构与性能的影响.研究结果表明:随着溅射时间延长,V2O5薄膜的厚度随着溅射时间延长而增厚,透过率随着厚度增加而呈现降低趋势;溅射4～5 h下制备的V2O5薄膜离子储量高于20 mC/cm2.综合考虑离子储存量和可见光透过率,磁控溅射法制备离子储存V2O5薄膜的溅射时间控制为4 h为宜.     

Si-C复合薄膜的制备及电化学性能研究

采用磁控溅射法,通过控制其中石墨薄膜的溅射时间,在铜箔集流体上沉积了三种不同厚度的Si-C复合薄膜。运用原子力显微镜(AFM)和扫描电子显微镜(SEM)对样品表面形貌和结构进行分析。运用恒电流充放电和循环伏安等方法研究了复合薄膜作为锂二次电池负极材料的电化学性能。结果表明,随着石墨溅射时间的增加,复合薄膜循环性能呈上升趋势,对比纯Si薄膜,石墨的复合添加明显改善了薄膜的循环性能。     

热塑性聚氨酯模压成型工艺优化

以热塑性聚氨酯(TPU)为原料,采用模压成型工艺制备了TPU薄膜,探究了工艺参数(压制温度、压制时间、保压压力、冷却速率)对TPU薄膜外观形貌、厚度和拉伸性能的影响.结果表明,若压制温度过高或压制时间过长,容易使TPU热分解,导致TPU薄膜产生气泡;压制温度较低或压制时间较短,则容易造成TPU薄膜厚度偏高.TPU薄膜的...     

磁控溅射法制备钨酸锆薄膜

在不同的气氛下,利用射频磁控溅射法在石英基片和硅片上制备了ZrW2O8薄膜.利用台阶仪和划痕仪测量了溅射薄膜的厚度和结合力,利用X射线衍射及原子力显微镜对薄膜的物相和表面形貌进行了分析和观察.初步研究了沉积条件对生长薄膜的厚度、附着力、相成分和表面形貌等的影响.结果表明:纯氩气下溅射的ZrW2O8薄膜最厚,膜基结合力随膜厚的增加而减小,溅射所得薄膜为非晶态,热处理后薄膜中出现了钨酸锆相,薄膜的表面形貌随气压的降低变得光滑.     

Transparent and conductive indium tin oxide/polyimide films prepared by high‐temperature radio‐frequency magnetron sputtering

A highly transparent and thermally stable polyimide (PI) substrate was prepared and used for the fabrication of indium tin oxide (ITO)/PI films via radio‐frequency magnetron sputtering at an elevated substrate temperature. The effect of the deposition conditions, that is, the oxygen flow rate, substrate temperature, sputtering power, and working pressure, on the optical and electrical properties of the ITO/PI films were investigated from the microstructural aspects. The results indicate that the optical and electrical properties of ITO were sensitive to the oxygen. Moreover, it was beneficial to the improvement of the ITO conductivity through the adoption of a high substrate temperature and sputtering power and a low working pressure in the deposition process. A two‐step deposition method was developed in which a thick bulk ITO layer was overlapped by deposition on a thin seed ITO layer with a dense surface to prepare the highly transparent and conductive ITO/PI films. The ITO/PI film after annealing at 240°C gave a transmittance of 83% and a sheet resistance of 19.7 Ω/square. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 42753.     

采用磁控溅射法在细菌纤维素膜上制备高性能的铟锡氧化物薄膜

Microbial cellulose (MC) membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide (ITO) electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency (RF) magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction (XRD),scanning electron microscopy (SEM),atomic force mi-croscopy (AFM),and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content (O2/Ar,volume ratio) in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 (Ω·sq-1)] and transparent (above 76%) ITO thin films (240 nm thick) were obtained with a moderate sputtering power (about 60 W) and with an oxygen flow rate of 0.25 ml·min-1 (sccm) during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.     

连续离子层吸附反应(SILAR)法制备纳米Cu_2O薄膜

采用低温液相薄膜制备工艺--连续离子层吸附反应(SILAR)法,在玻璃衬底上制备了纳米Cu2O薄膜,考察了工艺参数对薄膜质量和薄膜表面形貌的影响,对薄膜的生长速率与反应溶液浓度、反应温度以及循环次数的关系进行了研究和分析。结果表明,采用连续离子层吸附反应(SILAR)法有利于制备高质量的纳米Cu2O薄膜,连续离子层吸附反应(SILAR)法可以有效去掉疏松的离子,每次循环吸附反应都能使紧密吸附的离子转化成致密的纳米Cu2O薄膜,这样既有利于纳米Cu2O颗粒的生成,同时减少了污染和降低了成本。试验表明,制备纳米Cu2O薄膜的最佳反应温度为70℃,最佳反应溶液浓度均为1 mol/L,纳米Cu2O薄膜的膜厚随着循环次数的增加而增加,循环40次可制得厚度为0.38μm的薄膜。经XRD和SEM测试,所制备的薄膜纯度高,表面平整且致密,Cu2O颗粒大小约为100 nm。     

Deposition of Indium Tin Oxide Films on Acrylic Substrates by Radiofrequency Magnetron Sputtering

Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (<80°C) and low rf power (<28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μ made these sputtered ITO films applicable to infrared mirrors.     

铝锰合金表面直流反应磁控溅射制备氧化铟锡薄膜

采用直流反应磁控溅射在AlMn合金表面制备出ITO薄膜.采用扫描电镜、X射线衍射、紫外-可见光测试、磨损试验、盐雾试验、薄膜厚度测量和显微硬度试验等方法对制备的ITO薄膜表面进行检测分析.结果表明:在溅射功率210 W、衬底温度120℃、溅射时间20 min的条件下,AlMn合金表面的ITO薄膜晶粒尺寸细小,与基底结合良好,AlMn合金表面光泽度好,强度、硬度高,并具有一定的耐磨、耐蚀性能.     

ITO薄膜射频磁控溅射法制备及性能研究

以10%SnO2和90%In2O3(以质量计)烧结成的ITO氧化物陶瓷为靶材,采用射频磁控溅射法在玻璃基片成功地制备出光电性能优异的ITO透明导电薄膜。研究了基片温度和氧分压溅射工艺参数对ITO薄膜的结构和光电性能的影响。实验结果表明,采用氧化铟锡陶瓷靶射频磁控溅射制备的ITO薄膜沿(222)晶面生长,薄膜紫外透射光谱的吸收截止边带随着衬底温度和氧分压的升高向短波长方向漂移。     

Effect of Deposition Temperature on the Growth of Yttria-Stabilized Zirconia Thin Films on Si(111) by Chemical Vapor Deposition

An experimental study was made on the effect of deposition temperature on the growth of yttria-stabilized zirconia (YSZ) thin films in the chemical vapor deposition (CVD) process. The YSZ thin films were obtained in a temperature range of 650°–850°C, using β-diketone chelates and a Si(111) substrate. Dense and mirrorlike YSZ films with uniform thickness were prepared; the deposition rate was 12–20 nm/min at those temperatures. An examination of the crystalline structure of the YSZ films was made, and the appropriate temperature for the growth of c -axis-oriented YSZ thin films using a Si(111) substrate was determined. The quality of the YSZ films was strongly dependent on the deposition temperature. As the temperature increased, the film growth mechanism changed from being controlled by surface reaction to being controlled by gas-phase diffusion.     

Effects of element chemical states and grain orientation growth of ITO targets on photoelectric properties of the film

A study was carried out to compare element chemical states and grain orientation growth between two ITO targets, which were respectively sintered at 1560 °C (target A#) and 1600 °C (target B#). The lower sintering temperature can be beneficial to increase mass content ratio of In₂O₃ to SnO₂, reduce the production of Sn²⁺ ions and the component of O-In as well as increase oxygen holes, and can also promote grain orientation growth of In₂O₃ and In₄Sn₃O₁₂ phase. Three groups of ITO films were deposited at 230 °C using these targets to investigate the effects of sputtering parameters on the photoelectric properties of ITO films. Under different sputtering pressures, the sheet resistance for target A# has higher sensitivity to low O₂ flow, while target B# displays higher sensitivity to high O₂ flow. In the case of sputtering pressure of 0.5 Pa, ITO films for target A# displays the highest visible transmittance. In addition, annealing process could decrease the sheet resistance and improve the transmittance of ITO films because of its effect on the crystallinity and surface morphology of ITO films.     

Structural Modification of TiO2 Nanorod Films with an Influence on the Photovoltaic Efficiency of a Dye-Sensitized Solar Cell (DSSC)

TiO₂ nanorod films have been deposited on ITO substrates by dc reactive magnetron sputtering technique. The structures of these nanorod films were modified by the variation of the oxygen pressure during the sputtering process. Although all these TiO₂ nanorod films deposited at different oxygen pressures show an anatase structure, the orientation of the nanorod films varies with the oxygen pressure. Only a very weak (101) diffraction peak can be observed for the TiO₂ nanorod film prepared at low oxygen pressure. However, as the oxygen pressure is increased, the (220) diffraction peak appears and the intensity of this diffraction peak is increased with the oxygen pressure. The results of the SEM show that these TiO₂ nanorods are perpendicular to the ITO substrate. At low oxygen pressure, these sputtered TiO₂ nanorods stick together and have a dense structure. As the oxygen pressure is increased, these sputtered TiO₂ nanorods get separated gradually and have a porous structure. The optical transmittance of these TiO₂ nanorod films has been measured and then fitted by OJL model. The porosities of the TiO₂ nanorod films have been calculated. The TiO₂ nanorod film prepared at high oxygen pressure shows a high porosity. The dye-sensitized solar cells (DSSCs) have been assembled using these TiO₂ nanorod films prepared at different oxygen pressures as photoelectrode. The optimum performance was achieved for the DSSC using the TiO₂ nanorod film with the highest (220) diffraction peak and the highest porosity.