Electrical,thermal, and mechanical properties of porous silicon carbide ceramics with a boron carbide additive

The effects of the boron carbide (B₄C) content and sintering atmosphere on the electrical, thermal, and mechanical properties of porous silicon carbide (SiC) ceramics were investigated in the porosity range of 58.3%–70.3%. The electrical resistivities of the nitrogen-sintered porous SiC ceramics (∼10^–1 Ω·cm) were two orders of magnitude lower than those of argon-sintered porous SiC ceramics (∼10¹ Ω·cm). Both the thermal conductivities (3.3–19.8 W·m^–1·K^–1) and flexural strengths (8.1–32.9 MPa) of the argon- and nitrogen-sintered porous SiC ceramics increased as the B₄C content increased, owing to the decreased porosity and increased necking area between SiC grains. The electrical resistivity of the porous SiC ceramics was primarily controlled by the sintering atmosphere owing to the N-doping from the nitrogen atmosphere, and secondarily by the B₄C content, owing to the B-doping from the B₄C. In contrast, the thermal conductivity and flexural strength were dependent on both the porosity and necking area, as influenced by both the sintering atmosphere and B₄C content. These results suggest that it is possible to decouple the electrical resistivity from the thermal conductivity by judicious selection of the B₄C content and sintering atmosphere.     

Low-temperature preparation of porous SiC ceramics using phosphoric acid as a pore-forming agent and a binder

Porous SiC ceramics combine the properties of both SiC ceramics and porous materials. Herein, we design a facile method via pressureless sintering at relatively low temperatures for the synthesis of porous SiC ceramics. In the synthesis process, phosphoric acid was used as the sintering additive that reacted with SiO₂ on the surface of SiC to form phosphates. The formed phosphates acted as a binder to connect the SiC particles. At a fixed temperature, the phosphates were partially decomposed and released a large amount of gas. This changed the pore structure of the ceramics and greatly improved their porosity. Finally, we obtained the porous SiC ceramics with high porosity and high strength. We investigate the effects of H₃PO₄ content on the phase composition, microstructure, porosity, mechanical properties and thermal expansion coefficient of the prepared porous SiC ceramics. It was shown that at the sintering temperature of 1200 °C, the highest porosity of the samples can reach 70.42% when the H₃PO₄ content is 25 wt%, and their bending strength reaches 36.11 MPa at room temperature when the H₃PO₄ content is 15 wt%. In addition, the porous SiC ceramics show good high-temperature stability with a bending strength of 42.05 MPa at 1000 °C and the thermal expansion coefficient of 3.966 × 10⁻⁶/°C.     

Effect of carbon content on electrical,thermal, and mechanical properties of porous SiC ceramics with B4C and C additives

The electrical, thermal, and mechanical properties of porous SiC ceramics with B₄C-C additives were investigated as functions of C content and sintering temperature. The electrical resistivity of porous SiC ceramics decreased with increases in C content and sintering temperature. A minimal electrical resistivity of 4.6 × 10^?2 Ω·cm was obtained in porous SiC ceramics with 1 wt% B₄C and 10 wt% C. The thermal conductivity and flexural strength increased with increasing sintering temperature and showed maxima at 4 wt% C addition when sintered at 2000 °C and 2100 °C. The thermal conductivity and flexural strength of porous SiC ceramics can be tuned independently from the porosity by controlling C content and sintering temperature. Typical electrical resistivity, thermal conductivity, and flexural strength of porous SiC ceramics with 1 wt% B₄C-4 wt% C sintered at 2100 °C were 1.3 × 10^?1 Ω·cm, 76.0 W/(m·K), and 110.3 MPa, respectively.     

Processing and properties of cordierite-silica bonded porous SiC ceramics

Cordierite-silica bonded porous SiC ceramics were fabricated by infiltrating a porous powder compact of SiC with cordierite sol followed by sintering at 1300–1400 °C in air. The porosity, average pore diameter and flexural strength of the ceramics varied 30–36 vol%, ~ 4–22 µm and ~ 13–38 MPa respectively with variation of sintering temperature and SiC particle sizes. In the final ceramics SiC particles were bonded by the oxidation-derived SiO₂ and sol-gel derived cordierite. The corrosion behaviour of sintered SiC ceramics was studied in acidic and alkaline medium. The porous SiC ceramics were observed to exhibit better corrosion resistance in acid solution.     

Fabrication and properties of SiC porous ceramics using a polyurethane preparation process

SiC porous ceramics can be prepared by introducing the polyurethane preparation method into the production process of ceramic biscuits, followed by sintering at 1300?°C for 2?h under N₂ flux after the cross-linking of polycarbosilane at 220?°C for 4?h in air. The microstructures, mechanical properties and infiltrations of the SiC porous ceramics are investigated in detail. The best dispersal effect comes from the SiC slurry with xylene as the solvent and a mixture of Silok®7096 (1?wt%) and Anjeka®6041 (4?wt%) as the dispersant. The compressive strength of SiC porous ceramics with high porosity (69.53%) reaches 16.9?MPa. The heat treatment can increase infiltration, the rate of which (4.296?×?10^?7 mm²) after the heat treatment at 750?°C in air is approximately two times faster than that before the heat treatment. The SiC porous ceramics fabricated in this study will have potential application in active thermal protection systems.     

Preparation of porous SiC-Al2O3 ceramics via gelcasting utilising a shrinkable pore-forming agent and oxidised coarse-grained SiC

By utilising soaked millet as a shrinkable pore-forming agent, porous silicon carbide-alumina (SiC-Al₂O₃) ceramics were prepared via gelcasting. The fabrication of SiC-Al₂O₃ ceramics based on oxidised and unoxidised coarse-grained SiC was also studied. The water swelling, drying shrinkage, and low-temperature carbonisation of the millet were investigated. We found that the shrinkage of the soaked millet was greater than that of gel body during drying, which left large gaps that prevented shrinkage stresses from destroying the gel body. Low-temperature carbonisation of the millet should be performed slowly at 220–240?°C because its expansion rate increases to 45% at 250?°C, resulting in the cracking of samples. At a constant sintering temperature, the flexural strength of the SiC-Al₂O₃ ceramics prepared with SiC powders oxidised at 1000?°C was the highest, indicating that oxidised powders can successfully decrease the required sintering temperature and improve the flexural strength of composite ceramics. Based on our optimised process, porous SiC-Al₂O₃ ceramics were sintered at 1500?°C for 2?h. When their skeletons were fully developed, their pore sizes were in the range of 1.5–2?mm. Their porosity and flexural strength were 60.2–65.1% and 8.3–10.5?MPa, respectively.     

Corrosion behaviors of porous reaction-bonded silicon carbide ceramics incorporated with CaO

Reaction-bonded SiC (RBSC) porous ceramics were fabricated at 1450?°C in air by incorporating CaO using ZrO₂ as sintering aids, activated carbon as pore-forming agent, and mullite fibers as reinforcing agent. The effects of CaO content on the properties of the porous RBSC ceramics were studied. Corrosion behaviors of the prepared RBSC porous ceramics in different environments were also investigated. The optimal open porosity, bending strength, average pore size and gas permeability of the ceramics with 0.5% CaO were 40%, 22.5?MPa, 42.9?µm, and 2100?m³/m² h?kPa, respectively. A well-developed neck reaction-bonded by calcium zirconium silicate (Ca₃ZrSi₂O₉) was identified. The porous RBSC ceramics exhibited excellent corrosion resistance in acid and basic solutions. The anti-oxidation temperature of the porous RBSC ceramics could reach 1200?°C in air. The RBSC ceramics maintained the bending strength of 17.5?MPa after 60 cold-hot cycles in air (0–800?°C). The porous RBSC ceramics also exhibited relatively good corrosion resistance in molten salts (NaCl, Na₂SO₄ and CaCl₂). Melten NaOH can aggravate the reaction by breaking the SiO₂ layers on the SiC surface. Overall, these findings offer significant insights into expanding the applications porous RBSC ceramics incorporated with CaO.     

Effect of temperature on the structure and mechanical properties of SiC–TiB2 composite ceramics by solid-phase spark plasma sintering

SiC composite ceramics have good mechanical properties. In this study, the effect of temperature on the microstructure and mechanical properties of SiC–TiB₂ composite ceramics by solid-phase spark plasma sintering (SPS) was investigated. SiC–TiB₂ composite ceramics were prepared by SPS method with graphite powder as sintering additive and kept at 1700 °C, 1750 °C, 1800 °C and 50 MPa for 10min.The experimental results show that the proper TiB₂ addition can obviously increase the mechanical properties of SiC–TiB₂ composite ceramics. Higher sintering temperature results in the aggregation and growth of second-phase TiB₂ grains, which decreases the mechanical properties of SiC–TiB₂ composite ceramics. Good mechanical properties were obtained at 1750 °C, with a density of 97.3%, Vickers hardness of 26.68 GPa, bending strength of 380 MPa and fracture toughness of 5.16 MPa m^1/2.     

Processing and properties of silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity

Silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity were prepared by sintering nano-SiC powder-carbon black template compacts at 600–1200 °C for 2 h in air. The microstructure of the silica-bonded porous nano-SiC ceramics consisted of SiC core/silica shell particles, a silica bonding phase, and hierarchical (meso/macro) pores. The porosity and thermal conductivity of the silica-bonded porous nano-SiC ceramics can be controlled in the ranges of 8.5–70.2 % and 0.057–2.575 Wm⁻¹ K⁻¹, respectively, by adjusting both, the sintering temperature and template content. Silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity (0.057 Wm⁻¹ K⁻¹) were developed at a very low processing temperature (600 °C). The typical porosity, average pore size, compressive strength, and specific compressive strength of the porous nano-SiC ceramics were ∼70 %, 50 nm, 2.5 MPa, and 2.7 MPa·cm³/g, respectively. The silica-bonded porous nano-SiC ceramics were thermally stable up to 1000 °C in both air and argon atmospheres.     

Effects of porosity on electrical and thermal conductivities of porous SiC ceramics

The effects of porosity on the electrical and thermal conductivities of porous SiC ceramics, containing Y₂O₃–AlN additives, were investigated. The porosity of the porous SiC ceramic could be controlled in the range of 28–64 % by adjusting the sacrificial template (polymer microbead) content (0–30 wt%) and sintering temperature (1800–2000 °C). Both electrical and thermal conductivities of the porous SiC ceramics decreased, from 7.7 to 1.7 Ω⁻¹ cm⁻¹ and from 37.9 to 5.8 W/(m·K), respectively, with the increase in porosity from 30 to 63 %. The porous SiC ceramic with a coarser microstructure exhibited higher electrical and thermal conductivities than those of the ceramic with a finer microstructure at the equivalent porosity because of the smaller number of grain boundaries per unit volume. The decoupling of the electrical conductivity from the thermal conductivity was possible to some extent by adjusting the sintering temperature, i.e., microstructure, of the porous SiC ceramic.     

Effects of oxidation temperature on microstructure and EMI shielding performance of layered SiC/PyC porous ceramics

Herein, the influence of oxidation temperature on the oxidation behavior, microstructure and electromagnetic shielding performance of layered porous ceramics has been systematically investigated. Layered SiC/PyC porous ceramics were prepared by using low-pressure chemical vapor infiltration (LPCVI) method. The oxidized SiC/PyC layered porous ceramics exhibited a negligible mass reduction of 11.94 mg·cm^?3, which indicates the excellent high-temperature oxidation resistance of porous ceramics. The electromagnetic shielding performance of SiC/PyC porous ceramics did not exhibit any obvious change even after oxidation at high temperature from 900 to 1300 °C for 10 h. The SE_T of the layered SiC/PyC porous ceramics was 24.1, 20.0, 19.5, 19.0, 19.8 dB after oxidation at 25 °C, 900 °C, 1000 °C, 1100 °C and 1300 °C, which corresponds to a decrease of 17.01%, 19.09%, 21.16% and 17.84%, respectively. The high-temperature oxidation has rendered a more significant influence on the reflection efficiency of the layered SiC/PyC porous ceramics.     

Processing of Porous SiC by Aluminum‐Derived Binders and Sacrificial Porogen Leaching Method

Porous SiC was successfully fabricated by a facile and energy efficient sacrificial porogen leaching method using in situ synthesized aluminum‐based binders by reaction bonding at low sintering temperatures of 600–1000°C. Porous SiC ceramics with porosity in the range of 30–58% and compressive strength of 1–33 MPa were obtained. Interconnected bimodal pores were produced by both stacking of SiC particles and leach out of salt. During sintering, the aluminum binder experienced metal to ceramic transformations forming various alumina polymorphs (γ, δ, θ and α‐Al₂O₃). The porogen content and sintering temperatures significantly influence the properties of porous SiC.     

Controllable preparation of porous ZrB2–SiC ceramics via using KCl space holders

In this work, a novel and facile technique based on using KCl as space holders, along with partial sintering (at 1900 °C for 30 min), was explored to prepare porous ZrB₂–SiC ceramics with controllable pore structure, tunable compressive strength and thermal conductivity. The as-prepared porous ZrB₂–SiC samples possess high porosity of 45–67%, low average pore size of 3–7 μm, high compressive strength of 32–106 MPa, and low room temperature thermal conductivity of 13–34 W m⁻¹ K⁻¹. The porosity, pore structure, compressive strength and thermal conductivity of porous ZrB₂–SiC ceramics can be tuned simply by changing KCl content and its particle size. The effect of porosity and pore structure on the thermal conductivity of as-prepared porous ZrB₂–SiC ceramics was examined and found to be consistent with the classical model for porous materials. The poring mechanism of porous ZrB₂–SiC samples via adding pore-forming agent combined with partial sintering was also preliminary illustrated.     

Process-tolerant pressureless-sintered silicon carbide ceramics with alumina-yttria-calcia-strontia

Process-tolerant SiC ceramics were prepared by pressureless sintering at 1850–1950 °C for 2 h in an argon atmosphere with a new quaternary additive (Al₂O₃-Y₂O₃-CaO-SrO). The SiC ceramics can be sintered to a > 94% theoretical density at 1800–1950 °C by pressureless sintering. Toughened microstructures consisting of relatively large platelet grains and small equiaxed grains were obtained when SiC ceramics were sintered at 1850–1950 °C. The presently fabricated SiC ceramics showed little variability of the microstructure and mechanical properties with sintering within the temperature range of 1850–1950 °C, demonstrating process-tolerant behavior. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature from 1800 °C to 1900 °C due to decreases of the lattice oxygen content of the SiC grains and residual porosity. The flexural strength, fracture toughness, and thermal conductivity of the SiC ceramics sintered at 1850–1950 °C were in the ranges of 444–457 MPa, 4.9–5.0 MPa m^1/2, and 76–82 Wm^?1 K^?1, respectively.     

Porous SiC/SiCN composite ceramics fabricated by foaming and reaction sintering

Porous SiC/SiCN composite ceramics with heterogeneous pore structure and rod-like SiCN grains were fabricated by foaming and reaction sintering. The mixture slurry containing SiC and silicon as raw materials, cornstarch as binder, Y₂O₃ as sintering additive and an electrosteric dispersant was stirred with foams derived from pre-foaming using foaming agent. The casted green body was sintered at 1650 °C under nitrogen atmosphere. The results demonstrated that the porous SiC/SiCN ceramics exhibited hierarchical vias ranging from 1 μm to 1 mm and the rod-like crystalline SiCN grains generated in the SiC matrix.     

Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y₂O₃-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10¹ to 1.9 × 10⁻² Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω⁻¹·cm⁻¹ at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics.     

Fabricating toughened super-hard B4C composites at lower temperature by transient liquid-phase assisted spark plasma sintering with MoSi2 additives

Toughened, super-hard B₄C triplex-particulate composites were densified by spark plasma sintering with MoSi₂ additives (5, 10, and 15 vol.%) at temperatures in the range 1750–1850 °C at which the reference monolithic B₄C ceramics are porous. It is proved that MoSi₂ is a reactive sintering additive that promotes densification by transient liquid-phase sintering, thus yielding fully-dense B₄C-MoB₂-SiC composites at relatively lower temperatures. Specifically, the MoSi₂ first reacts at moderate temperatures (<1150 °C) with part of B₄C to form MoB₂, SiC, and Si. This last is a transient component that eventually melts (at ～1400 °C), contributing to densification by liquid-phase sintering, and then (at 1500–1700 °C) reacts with free C present in the B₄C starting powders to form more SiC, after which densification continues by solid-state sintering. It is found that these B₄C-MoB₂-SiC composites are super-hard (～30 GPa), tough (～3–4 MPa m^1/2), and fine-grained, a combination that renders them very appealing for structural applications. Finally, research opportunities are discussed for the future microstructural design of a novel family of toughened, ultra-hard/super-hard multi-particulate composites based on B₄C plus refractory borides and carbides.     

Effect of sintering temperature on electrical properties of SiC/ZrB2 ceramics

SiC/20?wt% ZrB₂ composite ceramics were fabricated via pressureless solid phase sintering in argon atmosphere at different temperature. The effect of sintering temperature on microstructure, electrical properties and mechanical properties of SiC/ZrB₂ ceramics was investigated. Electrical resistivity exhibits twice significant decreases with increasing sintering temperature. The first decrease from 1900?°C to 2000?°C is attributed to the obvious decrease of continuous pore channels in as-sintered materials. The second decrease from 2100?°C to 2200?°C results from the improvement of carbon crystallization and the disappearance of amorphous layers enveloping ZrB₂ grains. Additionally, the increase of sintered density with increasing temperature caused greatly advance of flexural strength, elastic modulus and Vickers hardness. But excessive temperature is detrimental to flexural strength because of SiC grain growth.     

Porosity control of porous silicon carbide ceramics

Porous SiC ceramics were fabricated by the carbothermal reduction of polysiloxane-derived SiOC containing polymer microbeads followed by sintering. The effect of the SiC powder:polysiloxane-derived SiC (SiC:PDSiC) ratio on the porosity and flexural strength of the porous SiC ceramics were investigated. The porosity generally increased with decreasing SiC:PDSiC ratio when sintered at the same temperature. It was possible to control the porosity of porous SiC ceramics within a range of 32–64% by adjusting the sintering temperature and SiC:PDSiC ratio while keeping the sacrificial template content to 50 vol%.The flexural strengths generally decreased with increasing porosity at the same SiC:PDSiC ratio. However, a SiC:PDSiC ratio of 9:1 and a sintering temperature of 1750 °C resulted in excellent strength of 57 MPa at 50% porosity. Judicious selection of the sintering temperature and SiC:PDSiC ratio is an efficient way of controlling the porosity and strength of porous SiC ceramics.     

Performance study of foam ceramics prepared by direct foaming method using red mud and K-feldspar washed waste

In this study, foam ceramics were prepared via a direct foaming method at high temperatures (1080–1120 °C), using red mud (RM) and K-feldspar washed waste (KFW) as the raw materials and SiC as the foaming agent, respectively. The chemical compositions and crystalline phases of the raw materials as well as the structural and mechanical properties of the foam ceramics were investigated. By adjusting the formulation and sintering process parameters, the porous structure of the foam ceramics could be effectively modulated. In addition to some residual crystalline phases in the raw materials, new phases, including rutile (TiO₂) and anorthite (CaAl₂Si₂O₈), were generated in foam ceramics. The compressive strength of the foam ceramics decreased with an increase in the KFW/RM ratio and sintering temperature, which was mainly related to the low density of the foam ceramics and the poor support of the pore walls to the structure. Among all the foam ceramics investigated, the foam ceramic with the KFW/RM ratio of 1:1, SiC content of 1 wt%, sintering temperature of 1100 °C and sintering time of 60 min showed the best overall performance with a bulk density, an apparent porosity, an average pore size and a compressive strength of 0.77 g/cm³, 61.89%, 0.52 mm, and 3.64 MPa, respectively. Its excellent porous structure and mechanical properties rendered it suitable for application as insulation materials or decorative materials for building partition walls.