Sol－Gel法制备的CoMnNiMgO热敏元件老化特性的研究

假设老化是从亚稳态到稳态的变化，利用反应动力学理论对Ｓｏｌ－Ｇｅｌ法制备的ＣｏＭｎＮｉＭｇＯ热敏元件的老化特性进行了研究，推导出老化公式△Ｒ／Ｒｏ＝Σｒｉ［１－ｅｘｐ（－ｔ／τｉ）］其中：τｉ＝τｏｉｅｘｐ（Ｅｉ／ｋＴ））。结果表明理论与实验能很好地一致，对于本文所研究的热敏元件，符合公式ＡＲ／Ｒｏ＝ｒ１［１－ｅｘｐ（－ｔ／τ１）］＋ｒ２［１－ｅｘｐ（－ｔ／τ２）］，该式中：，ｒ１＝１１．７６７×１０－３；ｒ２＝２０．６７３５×１０－３；τ１＝６．４５７８×１０－３ｅｘｐ（６１９０．８９／Ｔ）；τ２＝１．０４６１×１０－６ｅｘｐ（８ｌｌ６．２４／Ｔ）。     

双反应区激光制粉实验装置的研制

提出了双反应区的新构思，研制出双反应区激光制粉实验装置。以５ｋＷ大功率ＣＯ２激光器为能源，以六甲基二硅胺烷为原料，对新装置进行了评价。结果表明，与单反应区实验装置相比，双反应区实验装置可成倍提高激光能的利用率和粉末的制备产率。     

一种用于激光烧结陶瓷的大功率CO2激光均束装置

理论设计了一种反射型正交双带式积分镜均束装置，委托加工出实物，并搭建了实验装置。通过观察，该装置对实验用大功率CO2激光器光束达到了一定的均束效果，但同时均束得到的光斑光强分布出现了分裂现象，对其产生原因进行了分析。最后用均束后得到的光束对Ta2O5陶瓷进行了激光烧结实验，证明烧结效果得到了改善。     

V形结构离轴积分腔吸收光谱测量装置设计与研究

以2μm窄线宽分布式反馈(DFB)激光器为光源，搭建了一套新型V形结构离轴积分腔吸收光谱实验装置。利用LightTools光学仿真软件对实验光路进行模拟仿真和优化分析，获得了V形腔内的高反射镜表面光斑分布规律，选择合适的入射角度可很好地提高镜面利用效率，并进一步确定了在V形结构双边对称且单边臂长为25 cm的情况下，腔体最佳夹角为23.06°。根据设计加工腔体并搭建吸收光谱实验装置，使用体积分数为400×10^-6的CO₂标准气体在4991.258 cm^-1处对装置进行了实验研究，标定了高反镜的实际反射率和V形腔的有效光程。通过测量装置的Allan方差评估了实验装置的性能，实验结果表明，当平均时间为375 s时，装置检测限可达0.35×10^-6。利用该装置在4986.9955 cm^-1处对室内NH₃分子进行测量，获得了NH₃的吸收谱线，同时使用Savitzky-Golay算法对光谱数据进行平滑处理，获得了46.06的信噪比，展示了V形结...     

波长1320nm的Nd^3＋：YAG锁模脉冲激光器

在１３２０ｎｍＮｄ＾３＋；ＹＡＧ脉冲激光器的基础上进行了声光主动锁模的实验研究，给出了实验装置及实验数据。     

仿生偏振导航传感器实验模型的构建与标定

针对研制仿生导航微传感器的需要，设计并且搭建了偏振导航传感器实验模型。分析了仿生导航传感器工作的原理，构建了传感器模型实验平台和光学标定装置。利用光学标定装置对导航传感器进行了暗场标定、均匀非偏振光标定。进行了导航定位角度输出实验，获得了导航传感器三个偏振方向分析器标准化输出曲线。测试结果表明这种新型传感器的设计是合理有效的。     

双层生物组织模拟体中光分布的实验研究

本文拟建立一套实验装置，测量双层生物组织模拟体中的光分布，并将实验结果与理论计算的结果进行了比较。     

微角度的光学测量

综述了微角度的光学测量方法。就干涉法，自准直法和全内反射差动探测法等测量方法的原理及特点进行了讨论。给出了各方法的典型实验装置，讨论了各装置的特点及应用局限性，并对这些方法的进展进行了探讨。     

基于Sagnac干涉仪的新型声源定位光纤传感器

利用法拉第旋转镜（FRM）把Sagnac光纤干涉仪的环形光纤臂改成单臂直线结构的新型零程差干涉仪，克服了传统Sagnac光纤干涉仪结构上的缺点。另外，FRM作为偏振补偿器解决了偏振诱导信号衰弱问题。对该装置进行了理论分析，并以管道的泄漏声为例进行了实验研究，实验结果与理论分析相吻合，定位误差小于1％，表明该装置可以实现宽频声信号源的定位。     

多功能激光能量／功率表

本文介绍了一种采GNk-80单板计算机来进行激光功率，能量测量及激光能量计定标的实验装置。并给出了装置的结构和程序流程图。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-