联合迭代解调译码算法的短波FH/OFDM系统的性能分析

该文提出了一种基于联合迭代解调译码的短波跳频OFDM系统,并在其接收端采用非相干序列检测和迭代译码相结合的联合迭代解调译码算法。该联合迭代解调译码算法可以降低差分检测时所导致的性能损失,同时,也可以提高短波FH/OFDM系统的可靠性。仿真结果表明:该方法可使其系统在短波信道中获得较好的比特误码性能,当Eb/N0＝5.5 dB时,其系统的比特误码率可达到10-5,数据传输速率达到8.912 kb/s,显然,该联合迭代译码解调算法是适合短波FH/OFDM系统的。     

短波COFDM空、时、频系统迭代检测算法

短波信道是一个复杂的时变信道,多径效应、本振频偏、多普勒频移和时变衰落都为OFDM技术的应用造成了很大困难.本文设计的COFDM短波多天线接收系统,分别采用了多天线接收,串行级联卷积码(SCCC)编码,OFDM调制,可以分别达到空间、时间和频率上面的分集,从而改善了系统的性能.采用基于期望最大化(EM)算法与MAP译码算法相结合的迭代频偏、信道跟踪和信号检测算法.可以有效地克服短波时变信道的影响.计算机仿真结果表明,本文算法随着迭代次数的增多系统性能得到优化,而且,多天线系统比单天线系统有更好频偏、信道跟踪和信号检测性能.     

基于低密度校验码的OFDM编码调制译码算法

低密度校验码(LDPC)具有编码增益高、译码速度快、性能接近Shannon限的优点。LDPC码应用于OFDM，能有效地提高多径环境下OFDM的BER性能。本文首先简单介绍LDPC码及其概率域上的译码算法，在此基础上对译码算法作融合，阐述概率似然比的译码算法。为了把LDPC应用于OFDM系统上，提出了多电平调制下的LDPC译码的算法。仿真结果表明，在AWGN和Rayleigh信道下，此算法正确有效。     

短波OFDM系统中基于迭代插值的信道估计

经典的线性插值算法具有实现简单的优点,但短波信道是靠电离层反射进行通信,而电离层的分布是随机变化的,导致短波信道随机变化.所以数据子载波的频域响应与相邻导频子载波频域响应之间不再满足线性关系,即线性插值算法不适用于短波OFDM系统中.基于此提出了一种迭代的插值算法,该算法利用了两个距离最近的子载波的信道响应的相关性越大的原理,利用信号的相关性进行迭代,从而得出频域的信道估计.仿真表明,该插值算法有效拟合了短波信道特性曲线,降低了系统的误比特率和均方误差.     

OFDM系统中一种新型盲载波频偏估计

正交频分复用(OFDM)是一种能够有效地抗频率选择性衰落的技术。由于载波频偏的存在会引起载波间干扰,导致系统性能的严重下降。在分析载波频偏对系统影响的基础上,提出了一种联合译码的新型盲频偏估计算法。该算法只需要一个OFDM符号,将BICM译码的硬判决反馈信息作为虚拟训练序列,利用该反馈信号与接收信号的相关性进行频偏估计。通过BICM迭代译码,更新译码反馈信息,提高频偏估计精度。仿真结果表明,提出的算法经过3次迭代,可以有效地进行频偏估计。     

空时分块编码OFDM系统的Turbo均衡

研究了空时分块编码的OFDM（正交频分复用）系统,对系统进行了Turbo均衡,并讨论了此时系统的译码算法和均衡算法。系统信道编码采用Turbo码,通过对BCJR（Bahl,Cocke,Jelinek,Raviv）算法的简单修改得到SISO（单输入单输出）MAP（最大后验概率）译码算法;均衡器采用SISOMMSE（最小均方差）Turbo均衡算法,并利用OFDM系统的循环前缀特性进一步降低算法复杂度。通过仿真对系统性能进行了比较分析,仿真结果表明,采用迭代均衡的空时分块编码OFDM系统性能要明显优于未空时编码和未迭代均衡的OFDM系统。     

基于低密度奇偶校验码和非对称限幅光正交频分复用技术的大气激光通信系统性能

研究了一种光功率效率高的非对称限幅光正交频分复用(OFDM)调制技术,通过对信号的非对称削减,将OFDM调制技术运用到光通信领域。将这种非对称限幅光OFDM技术运用到大气激光通信系统中,分析了采用非对称限幅光OFDM技术大气激光通信系统在大气湍流信道下的性能。在此基础上,将低密度奇偶校验(LDPC)码和置信传播迭代译码算法应用到大气激光通信系统中,并结合非对称限幅光OFDM强度调制方案,在大气湍流信道中进行了仿真。仿真结果表明,LDPC码具有优越的纠错能力并获得了较大的编码增益,该方案可以满足大气激光通信系统的需要。     

基于整体最小二乘的联合信道估计及OFDM信号检测算法

针对现有的联合信道估计及OFDM信号检测算法性能不高的问题,该文提出一种基于整体最小二乘的联合信道估计及OFDM信号检测算法。该算法首先通过导频估计初始的信道信息,在此基础上不断地采用整体最小二乘进行OFDM信号检测及信道估计,有效缓解迭代模型误差的影响,加快了算法迭代的收敛速度,提高了信道估计的精度,从而降低了OFDM系统的误码率。该文推导的信道估计克拉美罗界及仿真结果均表明所提出的算法在时变信道环境下优于现有的联合信道估计及OFDM信号检测算法。     

BICM-OFDM系统中基于ML算法的迭代频偏估计

正交频分复用(OFDM)联合比特交织编码调制(BICM),是一种能够有效地抗频率选择性衰落的技术.由于载波频偏的存在会引起载波间干扰,导致系统性能的严莺下降.针对BICM-OFDM系统提出了一种基于最大似然(ML)估计的迭代频偏估计算法.该算法充分利用了译码信息,分两步进行.首先,利用最大似然估计进行初始频偏估计,然后再利用BICM译码的硬判决反馈信息进行残留频偏估计.通过BICM迭代译码,更新译码反馈信息,提高频偏估计精度.在短波宽带信道下的仿真结果表明,在频偏为0～0.2的范围内,提出的算法经过3次迭代可有效地进行频偏估计.与传统最大似然估计算法相比,本文提出的算法提高了低信噪比下的频偏估计精度,并且提高了频偏估计范围.     

一种适用于Turbo译码的新型迭代停止算法

针对Turbo码迭代译码延时大的问题,本文提出了一种加速译码的新型迭代停止方法,该方法利用了两个分量译码器输出的对数似然比LLR(Logarithm Likelihood Ratio)的统计特性,简称为LCB(LLR Characters Based)算法.同现存的经典停止准则相比,在相同的比特误码率性能下,新方法有效的降低了译码平均迭代次数,加速了Turbo码译码,可应用于流媒体信号传输系统.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.