一种新型体硅谐振加速度计

设计了一种谐振加速度计.这种加速度计包括两个双端固定音叉、一个质量块、四套放大惯性力的杠杆系统以及激励和敏感梳.利用梳状电极每个音叉被静电激励和敏感.利用MEMS体硅工艺研制了这种新型加速度计,测试的灵敏度为27.3Hz/g,分辨率为167.8μg.     

一种新型的CMOS集成湿度传感器

利用MEMS技术 ,对一种新型CMOS湿度传感器进行理论分析、模拟以及结果讨论。该湿度传感器采用标准CMOS工艺制造 ,采用梳状铝电极结构、梳状多晶硅加热结构 ,衬底接地 ,感湿介质采用聚酰亚胺 ,利用商业软件Coventor进行模拟绘制出敏感电容与相对湿度的曲线图。接口电路采用开关电容电路 ,输出可测电压信号 ,利用Microsim公司的Pspice模拟电路得到相对湿度与输出电压曲线关系     

梳状齿环形压电振子振动的有限元分析

利用有限元法对具有梳状齿的环形电压振子进行了计算,分析了行波马达不同结构参数对压电振子动态特性的影响,绘制了各参数对压电振子固有频率的影响曲线,进行了马达试验,分析结果与试验结果基本符合,可作为这种振子设计的依据。     

一种新型的CMOS集成湿度传感器

利用MEMS技术,对一种新型CMOS湿度传感器进行理论分析、模拟以及结果讨论.该湿度传感器采用标准CMOS工艺制造,采用梳状铝电极结构、梳状多晶硅加热结构,衬底接地,感湿介质采用聚酰亚胺,利用商业软件Coventor进行模拟绘制出敏感电容与相对湿度的曲线图.接口电路采用开关电容电路,输出可测电压信号,利用Microsim公司的Pspice模拟电路得到相对湿度与输出电压曲线关系.     

一种新型的CMOS集成湿度传感器

利用MEMS技术，对一种新型CMOS湿度传感器进行理论分析、模拟以及结果讨论。该湿度传感器采用标准CMOS工艺制造，采用梳状铝电极结构、梳状多晶硅加热结构，衬底接地，感湿介质采用聚酰亚胺，利用商业软件Coventor进行模拟绘制出敏感电容与相对湿度的曲线图。接口电路采用开关电容电路，输出可测电压信号，利用Microsim公司的Pspice模拟电路得到相对湿度与输出电压曲线关系。     

光梳状滤波器在光纤光栅解调中的研究及应用

本文简要介绍了光纤光栅传感解调系统中光梳状滤波器的原理,讨论了梳状滤波器的基本制作方法,详细分析了两种制作方法制作的光梳状滤波器,分析了制作方法不同对梳状滤波器的性能的影响。采用梳状滤波器作为光纤光栅解调系统的波长校准的参考。对梳状滤波器的工艺制作进行了改进,在制作中引入了零温度系数玻璃,降低了梳状滤波器的温漂。     

梳状体二值化数据采集方法的研究

介绍了一种能够有效地检测梳状物体尺寸和形状的方法.该方法采用线阵CCD作光电传感器,CCD输出信号经二值化处理后采用静态存储器进行高速存储,完成数据采集的功能,且可通过数字电位器用计算机软件提供二值化阈值信号.通过公式可以快速地计算出梳状体的齿宽和齿间距.该方法可准确、实时地对生产线上匀速运动的物体进行高速度、高精度的尺寸检测.     

响应[N(NH_3)_3]气体TiO_2敏感材料低阻化研究

通过N2气氛高温退火、Nb2O5掺杂和采用梳状电极结构等方法,成功提高了TiO2基敏感材料的电导率。实验证明,降低氧分压可增强TiO2自身半导化程度;掺入10%左右Nb2O5,Nb5+替代Ti4+形成固溶体,可使TiO2得到最佳半导化效果;采用梳状电极结构,可以在一定程度上减小器件阻值,从而为制造低阻、高灵敏度、高选择性动物食品测鲜传感器开辟了一条新途径。     

低通混响滤波器设计及其性能分析

给出了嵌套的低通混响滤波器的统一设计结构。针对一阶FIR,IIR低通滤波器,分析了系统稳定性的条件;同时分析了嵌套结构的低通梳状滤波器性能。仿真结果表明,与其他结构的梳状滤波器相比,嵌套的低通梳状滤波器结构更有效。     

∑-△A／D转换器中抽样滤波器的设计和优化

为降低∑-△模/数转换器(ADC)的功耗和面积,在分析和比较不同梳状滤波器实现结构的基础上,提出了一种优化的梳状滤波器结构.基于TSMC 0.18μm CMOS标准单元库,进行了电路仿真和综合.实验结果表明,采用该结构可比传统的CIC结构节省36%的面积和50%的功耗.同时,根据抽样滤波器总功耗的分布,提出了对其整体结构的优化方法.     

一种新型的带栅形条电容和可变间距电容的惯性信号检测结构

The comb capacitances fabricated by deep reactive ion etching （RIE） process have high aspect ratio which is usually smaller than 30 ： 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate＇s effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio （30 ： 1） of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy （FEM） tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.     

A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances

The comb capacitances fabricated by deep reactive ion etching (RIE) process have high aspect ratio which is usually smaller than 30 : 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate's effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio (30 : 1) of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy (FEM) tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.     

MEMS电容式加速度计的动态特性分析

针对梳齿电容形式的微机械加速度计,对其工作原理和动态性能进行了分析。该微结构的质量块由4个折叠梁支撑,采用梳齿结构形成差分检测电容用于检测质量块的位移。通过理论推导得到了结构的质量、刚度和阻尼的计算公式。组成梳齿结构的两平行极板间的气体在极板运动时产生两种作用力:阻尼力和弹性力,运动频率较低时阻尼力为主要表现形式,高频时弹性力则占主要因素。针对一组特定的结构参数,对气体压强分别为100Pa和0.1MPa时微机械加速度计的频率响应特性进行了分析,当气体压强太小时,会造成系统带宽的降低,而当气体压强较高时,系统的动态特性表现良好,并在电容极板间隙约为3μm时,系统的动态特性达到最优。     

基于二维模型的静电梳状结构平稳性分析

微静电驱动器作为MEMS中一个重要的功能实现器，是当前MEMS中研究的热点。文章基于二维模型结合垂直平移刚度及转动刚度两方面综合考虑，对静电微驱动结构单元的面不平稳性及最大静态位移进行了研究分析。其最大静态位移与叉指间距，初始重叠长度以及弹性系数比有关，分析了理论结果并通过FEM进行验证。     

A fingerprint sensor based on the feedback capacitive sensingscheme

This paper introduces a single-chip, 200×200-element sensor array implemented in a standard two-metal digital CMOS technology. The sensor is able to grab the fingerprint pattern without any use of optical and mechanical adaptors. Using this integrated sensor, the fingerprint is captured at a rate of 10 F/s by pressing the finger skin onto the chip surface. The fingerprint pattern is sampled by capacitive sensors that detect the electric field variation induced by the skin surface. Several design issues regarding the capacitive sensing problem are reported and the feedback capacitive sensing scheme (FCS) is introduced. More specifically, the problem of the charge injection in MOS switches has been revisited for charge amplifier design     

集成电容式传感器边界电极的静电电容值分析

 本文研究一种梳齿电极结构的集成电容式传感器,利用保角变换对其边界电极的静电电容值情况进行推导,给出了边界电极电容值的解析表达式,并利用Ansys软件对其进行仿真验证。结果显示解析公式得到的计算结果和软件仿真结果相吻合,说明得到的公式具有高的精度。利用所给的解析表达式可以为设计和应用该结构电容式传感器提供更好的理论基础。     

新型磁驱动增大检测电容的高精度MEMS惯性传感器研究

增大传感器振子的质量和静态测试电容可以减小电容式MEMS惯性传感系统的噪声,而深度粒子反应刻蚀工艺由于复杂的工艺原因,当深宽比较大时,不能刻蚀出大质量和大初始电容的传感器.据此,本文研究了一种磁驱动增大检测电容的MEMS惯性传感器,通过电磁驱动器,传感器的静态测试电容可以大幅增加,在梳齿电容上刻蚀阻尼槽后,其机械噪声达到0.61μg每根号赫兹,仿真其共振频率为598Hz,静态位移灵敏度为0.7μm每重力加速度,基于硅 玻璃键合工艺,制作了栅形条电容式惯性传感器,并用电磁驱动的方式测试其品质因子达到715,从而验证了制作工艺的可行性和电磁驱动器改变传感器初始静态测试电容的可行性.     

倾斜梳齿的MEMS电容式传感器惯性脉冲响应特性研究

 DRIE(Deep Reactive Ion Etching)工艺加工的高深宽比梳齿电容不能保证绝对平行.本文在考虑低真空空气阻尼力的同时,研究了梳齿电容倾斜的MEMS传感器对脉冲惯性信号的响应,并分析了DRIE工艺因素对器件性能的影响.研究结果表明,当传感器为没有静电力反馈的双边电容结构时,梳齿电容的不平行对传感器的响应位移、惯性脉冲响应线性度范围影响明显,且随着封装真空度增加而加重.若传感器有静电力反馈,惯性脉冲响应的灵敏度降低,但DRIE工艺因素的影响程度降低.为了抑制DRIE工艺导致的梳齿电容不平行因素的影响,文中还设计了一个新型的变电容面积的MEMS惯性传感器,并用ANSYS初步分析了其性能,设计了其详细的制作工艺流程.     

A single-chip fingerprint sensor and identifier

A chip architecture that integrates a fingerprint sensor and an identifier in a single chip is proposed. The fingerprint identifier is formed by an array of pixels, and each pixel contains a sensing element and a processing element. The sensing element senses capacitances formed by a finger surface to capture a fingerprint image. An identification is performed by the pixel-parallel processing of the pixels. The sensing element is built above the processing element in each pixel. The chip architecture realizes a wide-area sensor without a large increase of chip size and ensures high sensor sensitivity while maintaining a high image density. The sensing element is covered with a hard film to prevent physical and chemical degradation and surrounded by a ground wall to shield it. The wall is also exposed on the chip surface to protect against damage by electrostatic discharges from the finger contacting the chip. A 15×15 mm² single-chip fingerprint sensor/identifier LSI was fabricated using 0.5-μm standard CMOS with the sensor process. The sensor area is 10.1×13.5 mm². The sensing and identification time is 102 ms with power consumption of 8.8 mW at 3.3 V. Five hundred tests confirmed a stranger-rejection rate of the chip of more than 99% and a user-rejection rate of less than 1%     

Elastomeric Electronic Skin for Prosthetic Tactile Sensation

This report demonstrates a wearable elastomer‐based electronic skin including resistive sensors for monitoring finger articulation and capacitive tactile pressure sensors that register distributed pressure along the entire length of the finger. Pressure sensitivity in the order of 0.001 to 0.01 kPa^?1 for pressures from 5 to 405 kPa, which includes much of the range of human physiological sensing, is achieved by implementing soft, compressible silicone foam as the dielectric and stretchable thin‐metal films. Integrating these sensors in a textile glove allows the decoupling of the strain and pressure cross‐sensitivity of the tactile sensors, enabling precise grasp analysis. The sensorized glove is implemented in a human‐in‐the‐loop system for controlling the grasp of objects, a critical step toward hand prosthesis with integrated sensing capabilities.