(Ba,Co,Nb)掺杂SnO2压敏材料电学非线性的研究

通过对样品的伏安特性，晶界势垒的测量和分析，研究了BaCO3对新型(Co，Nb)掺杂SnO2压敏材料微观结构和电学性质的影响。晶界势垒高度测量表明，SnO2晶粒尺寸的迅速减小是压敏电压急剧增高的原因。对Ba含量增加引起SnO2晶粒减小的根源进行了解释。掺杂x(BaCO3)=0．4％的SnO2压敏电阻击穿电压为最小(140V／mm)；掺杂x(BaCO3)-0．8％的SnO2压敏电阻具有最高非线性系数(α=19．6)，最高的势垒电压(ψB=1．28eV)。     

Zr掺杂的SnO_2瓷的压敏和介电性质

目前电子陶瓷工艺普遍采用ZrO2球作为磨介。为了弄清ZrO2球磨损对压敏瓷性能的作用,系统研究了ZrO2对(Co,Nb)掺杂SnO2瓷的压敏和介电性质的影响。当ZrO2的含量(摩尔分数)从0.00增加到1.00%时,(Co,Nb)掺杂的SnO2压敏电阻的击穿电压从345 V/mm增大到485 V/mm,1 kHz时的相对介电常数从1 590减小到1 120。晶界势垒高度测量表明:在实验范围内,Zr的含量对势垒高度的影响较小。SnO2的晶粒尺寸的迅速减小是击穿电压增高和介电常数迅速减小的主要原因。对Zr掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

Nb掺杂对ZnO压敏陶瓷电学性能的影响

研究了Nb2O5对ZnO压敏材料电学性能的影响。当x(Nb2O5)从0增加到1％时，ZnO压敏电阻的击穿电压从209V／mm降至0．70V／mm，40Hz时，样品电阻从0．21MΩ降至48．3Ω，1kHz时的相对介电常数从831增大到42200。晶界势垒高度测量表明：在实验范围内，Nb对势垒高度的影响较小。ZnO晶粒的变大是压敏电压急剧降低和介电常数增大的主要原因。对Nb掺杂量的增加引起样品阻抗减小的根源进行了解释。     

CeO_2掺杂引起SnO_2压敏电阻的晶粒尺寸效应

研究了掺CeO2对SnO2Co2O3Ta2O5压敏电阻器性能的影响。研究发现:随着x(CeO2)从0增加到1%,压敏电压从190 V/mm增加到205 V/mm,相对介电常数从3 317减小到2 243,晶粒平均尺寸从12.16 mm减小到6.23 mm,在晶界上的Ce4+阻碍了SnO2晶粒的生长。为了解释样品电学非线性性质的起源,笔者提出了SnO2Co2O3Ta2O5CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析,试验测量与等效电路分析结果相符。     

SiO_2对SnO_2·CoO·Nb_2O_5压敏电阻非线性电学性质的影响

对 Si O2 掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻非线性电学性质进行了研究 ,并对其微观结构进行了电镜扫描 ,且对其晶界势垒高度进行了测量。实验表明 x(Si O2 ) =0 .3%掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻的非线性系数 α高达 30 ,并且具有最高的击穿电场 (375 V/ mm)。采用 Gupta- Carlson缺陷模型对晶界肖特基势垒高度随Si O2 的添加而变大的现象进行了理论解释。     

钕掺杂对SnO_2·Co_2O_3·Nb_2O_5压敏电阻瓷电性能的影响

通过对样品的伏安特性,晶界势垒的测量和分析,研究了Nd2O3对SnO2·Co2O3·Nb2O5压敏电阻瓷电性能的影响。发现掺入x(Nb2O3)为0.050%的样品表现出最好的压敏性质,其压敏电压为460.69 V/mm,密度为6.812 g/cm3,非线性系数为18.7。为了说明电学非线性的起源,提出了SnO2压敏材料的一个缺陷势垒模型。     

Na掺杂对ZnO压敏材料电学性能的影响

研究了Na2CO3对ZnO压敏材料电学性能的影响。当掺入的Na2CO3之摩尔分数x从0增加到0.2%时,ZnO压敏材料的击穿电压从209 V/mm增加到934 V/mm,1 kHz时的相对介电常数从1 158降到57。晶界势垒高度测量表明:在实验范围内,Na对势垒高度的影响较小。ZnO晶粒的变小是压敏电压急剧升高和介电常数减小的主要原因。对Na2CO3掺杂量的增加引起ZnO晶粒减小的原因进行了解释。     

MnCO3掺杂对SnO2·Ni2O3·Nb2O5压敏材料性的影响

研究并分析了Ni3+掺杂和Co2+掺杂对SnO2压敏电阻致密度和电学非线性性能的影响.研究了掺Mn2+对SnO2@Ni 2O3@Nb2O 5压敏材料性能的影响.发现x(MnCO3)为0 10%时,压敏电阻具有最高的视在电场(EB=686 89 V/mm)和最好的电学非线性性能(α=1 2 9).样品的收缩率和致密度变化趋势不一致,这是因为样品的致密度是由收缩率和MnCO3的挥发量两因素共同决定的.     

TiO2掺杂导致的SnO2压敏陶瓷晶粒尺寸效应

研究了TiO2掺杂对SnO2-Co2O3-Nb2O5系压敏陶瓷材料电学性能的影响。掺入x(TiO2)为1.00%的陶瓷样品具有最高的密度(r = 6.82 g/cm3),最高的视在势垒电场(EB= 476 V/mm),最高的非线性系数(a = 11.0),最小的相对介电常数。未掺杂的样品阻抗最大。随TiO2掺杂量的增加晶粒逐渐变小,晶粒尺寸的减小归因于未固溶于SnO2晶格而偏析在晶界上的TiO2阻碍相邻SnO2晶粒融合。为了解释SnO2-Co2O3-Nb2O5-TiO2系电学非线性性质的根源,对前人的晶界缺陷势垒模型进行了修正。     

MnCO3掺杂对SnO2·Ni2O3·Nb2O5压敏材料性能的影响

研究并分析了Ni3+掺杂和Co2+掺杂对SnO2压敏电阻致密度和电学非线性性能的影响.研究了掺Mn2+对SnO2@Ni 2O3@Nb2O 5压敏材料性能的影响.发现x(MnCO3)为0 10%时,压敏电阻具有最高的视在电场(EB=686 89 V/mm)和最好的电学非线性性能(α=1 2 9).样品的收缩率和致密度变化趋势不一致,这是因为样品的致密度是由收缩率和MnCO3的挥发量两因素共同决定的.     

Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping,Microstructure, and Charge Transport

Polymer doping of solution‐processed In₂O₃ with small amounts of the electron‐rich polymer, polyethylenimine (PEI), affords superior transistor performance, including higher electron mobility than that of the pristine In₂O₃ matrix. PEI doping of In₂O₃ films not only frustrates crystallization and controls the carrier concentration but, more importantly, acts as electron dopant and/or scattering center depending on the polymer doping concentration. The electron donating capacity of PEI combined with charge trapping and variation in the matrix film microstructure yields, for optimum PEI doping concentrations of 1.0%–1.5%, electron mobilities as high as ≈9 cm² V^?1 s^?1 on a 300 nm SiO₂ gate dielectric, an excellent on/off ratio of ≈10⁷, and an application optimal V _T. Importantly, these metrics exceed those of the pure In₂O₃ matrix with a maximum mobility ≈4 cm² V^?1 s^?1. Furthermore, we show that this approach is extendible to other oxide compositions such as IZO and the technologically relevant IGZO. This work opens a new means to fabricate amorphous semiconductors via solution processing at low temperatures, while preserving or enhancing the mobility of the pristine polycrystalline semiconductor.     

Effects of molarity on structural,optical, morphological and CO2 gas sensing properties of nanostructured copper oxide films deposited by spray pyrolysis

In this paper, we have exposed the effects of molarity on structural, optical, morphological and gas sensing properties of copper oxide films deposited by pneumatic spray pyrolysis method. The molar concentration was varied from 0.05 to 0.3 M. X-ray diffractograms showed the formation of a single phase CuO for films prepared with 0.05 and 0.1 M concentrations. A secondary phase Cu₂O was obtained for 0.2 and 0.3 M concentrations. Optical measurements showed that 0.05 M concentration provides a film with the best transparency in the visible and near infrared regions. The thickness values were between 2 and 110 µm. Moreover, the contact angle measurements have shown that all the deposited films are hydrophobic with angles between 103° and 121°. The morphological properties were investigated using SEM and AFM. According to SEM and AFM micrographs, 0.05 M is the concentration that leads to porous structure. The gas sensing measurements confirm that this porous surface structure is the most sensitive to different CO₂ concentrations.     

Kinetics of trapping,detrapping, and trap generation

The trapping and detrapping of charge in the oxides have been studied for two decades. While there has been a lot of progress in understanding the mechanisms responsible for charge trapping and detrapping in these oxides, it is still not fully understood. For example, even under low field injection conditions first order trapping kinetics do not accurately model the observed data. Under high field injection the situation is exacerbated by the generation of additional trapping sites during the injection process, which is also not completely understood. The paper presents a review of the kinetics of trapping and detrapping and describes various models that have been proposed to explain experimentally observed trapping-detrapping behavior.     

Hyperbranched Polyglycerol‐Grafted Superparamagnetic Iron Oxide Nanoparticles: Synthesis,Characterization, Functionalization,Size Separation,Magnetic Properties,and Biological Applications

For biomedical application of nanoparticles, the surface chemical functionality is very important to impart additional functions, such as solubility and stability in a physiological environment, and targeting specificity as an imaging probe and a drug carrier. Although polyethylene glycol (PEG) has been used extensively, here, it is proposed that hyperbranched polyglycerol (PG) is a good or even better alternative to PEG. Superparamagnetic iron oxide nanoparticles (SPIONs) prepared using a polyol method are directly functionalized with PG through ring‐opening polymerization of glycidol. The resulting SPION‐PG is highly soluble in pure water (>40 mg mL^?1) and in a phosphate buffer solution (>25 mg mL^?1). Such high solubility enables separation of SPION‐PG according to size using size exclusion chromatography (SEC). The size‐separated SPION‐PG shows a gradual increase in transverse relaxivity (r₂) with increasing particle size. For biological application, SPION‐PG is functionalized through multistep organic transformations (–OH → –OTs (tosylate) → –N₃ → –RGD) including click chemistry as a key step to impart targeting specificity by immobilization of cyclic RGD peptide (Arg‐Gly‐Asp‐D ‐Tyr‐Lys) on the surface. The targeting effect is demonstrated by the cell experiments; SPION‐PG‐RGD is taken up by the cells overexpressing α_vβ₃‐integrin such as U87MG and A549.     

Uncovering Original Z Scheme Heterojunctions of COF/MOx (M = Ti,Zn, Zr,Sn, Ce,and Nb) with Ascendant Photocatalytic Selectivity for Virtually 99.9% NO-to-NO3− Oxidation

Novel Covalent organic skeleton/metal oxide (COF/MO_x; M = Ti, Zn, Zr, Sn, Ce, Nb) Z scheme heterojunction is constructed to achieve highly selective oxidation of nitric oxide (NO). Under visible-light irradiation, the optimized COF/TiO₂ (CF/TS0.05) catalyst showed an excellent NO removal rate (64.5%), resulting from the improvement of light absorption performance, the separation efficiency of photoexcited electron-hole pairs, and O₂ activation due to the uniform coating of COF. Meanwhile, the electrons are captured by the adsorbed oxygen to effectively render into superoxide radicals as the main active species, and the corresponding holes are retained at the complex interface due to the hydrophobic COF coating, which extremely reduced the ability of activated water to produce hydroxyl radicals and limited the production of intermediate nitrogen dioxide (NO₂), thereby improving the oxidation selectivity toward nitrate (NO₃⁻) at 99.9% in the Z scheme heterojunction. More importantly, other COF/MO_x catalysts also exhibited superior selectivity and activity, meaning that this scheme is credited with universality. In short, this study reveals that the generation of only one main reactive oxygen species is enhanced by reasonable control of electron-hole pair in the new Z scheme heterojunction to significantly increase photocatalytic performance and selectivity.     

A Simple Template‐Free Strategy to Synthesize Nanoporous Manganese and Nickel Oxides with Narrow Pore Size Distribution,and Their Electrochemical Properties

A facile method has been developed to synthesize nanoporous manganese and nickel oxides with polyhedron particle morphologies, high surface areas and narrow pore distributions by controlled thermal decomposition of the oxalate precursors. This method can be extended to using other kinds of salt precursors to prepare a series of nanoporous metal oxides. The heating rate, calcination temperature and controlled particle size of the oxalate precursors are important factors to get well‐defined pore structures. XRD, TG‐DTA, TEM, SEM, XPS, wet chemical titration and N₂ sorption isotherm techniques are employed for morphology and structure characterizations. High surface area microporous manganese oxide (283 m² g^?1) and mesoporous nickel oxide (179 m² g^?1) with narrow pore distribution at around 1.0 nm and 6.0 nm, respectively, are obtained. Especially, we can tune the pore size of manganese oxides from microscope to mesoscope by controlling the thermal procedure. Electrochemical properties of manganese and nickel oxides are studied by cyclic voltammetry measurements in a mild aqueous electrolyte, which shows a high specific capacitance of 309 F g^?1 of microporous manganese oxide and a moderately high specific capacitance of 165 F g^?1 of mesoporous NiO due to their nanoporous structure, presenting the promising candidates for super capacitors (SC).     

Broadband,High‐Speed,and Large‐Amplitude Dynamic Optical Switching with Yttrium‐Doped Cadmium Oxide

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low‐loss modulators and all‐optical switches due to their tunable optical properties, fast optical response, and low losses. In this work, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid‐infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y‐concentrations is observed. Broadband all‐optical switching from near‐infrared to mid‐infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. This work could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid‐infrared region.     

Growth,characterization and modeling of InxGa1−xP stripes by selective-area MOCVD

A computational diffusion model is used to predict the lateral thickness and composition profiles of In_xGa_1−xP stripes grown by selective-area, atmospheric pressure metalorganic chemical vapor deposition. Standard profilometry is used to measure the thickness profiles of InP and GaAs stripes grown on SiO₂ patterned InP and GaAs substrates, respectively. The model is used to find self-consistent empirical diffusion parameters for the In and Ga components which yield fits to the measured thickness data. The InP and GaAs data is then used to predict the growth thickness profile of InGaP by a weighted sum of the predicted profiles of the InP and GaP binary constituents. InGaP composition profiles are calculated by taking the ratio of the InP deposited volume to the InGaP deposited volume predicted by the model at each of the simulation points. Predicted thickness profiles are verified by standard profilometry, and composition profiles are verified by secondary ion mass spectrometry imaging using a fast resistive anode encoding detector. It is found that the measured thickness and composition profiles agree well with the profiles predicted by the model, thus verifying that the model can be used for the InGaP material system. The derived empirical parameters are used to predict the thicknesses and compositions of selectively grown InGaP quantum wells as a function of oxide width.     

Theoretical and experimental investigations of the thermoelectric properties of Al-, Bi- and Sn-doped ZnO

In this paper, the thermoelectric properties of ZnO doped with Al, Bi and Sn were investigated by combining experimental and theoretical methods. The average Seebeck coefficient of Bi doped ZnO over the measured temperature range is improved from −90 to −497 μV/K. However, segregation of Bi₂O₃ in ZnO:Bi sample, confirmed by FESEM, lead to enormous grain growth and low electrical conductivity, which makes Bi is not a good dopant to improve ZT value of ZnO. As a 4+ valence cation, Sn doping actually show an increase in carrier concentration to 10²⁰ cm⁻³, further enhancing the electrical conductivity. Unfortunately, the Seebeck coefficient of ZnO:Sn samples is even lower than pure ZnO sample, which lead to a low ZT value. As for ZnO:Al sample, with nearly no change in lattice thermal conductivity, electrical conductivity and Seebeck coefficient were both enhanced. Threefold enhancement in ZT value has been achieved in ZnO:Al sample at 760 °C compared with pure ZnO.