| TiO2掺杂导致的SnO2压敏陶瓷晶粒尺寸效应 |
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| 引用本文： | 明保全,王矜奉,陈洪存,苏文斌,臧国忠,高建鲁.TiO2掺杂导致的SnO2压敏陶瓷晶粒尺寸效应[J].电子元件与材料,2004,23(6):20-22,27. |
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| 作者姓名： | 明保全 王矜奉 陈洪存 苏文斌 臧国忠 高建鲁 |
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| 作者单位： | 山东大学物理与微电子学院,山东,济南,250100;济南安太电子研究所,山东,济南,250010 |
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| 基金项目： | 山东省自然科学基金，Z2003F04， |
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| 摘 要： | 研究了TiO2掺杂对SnO2-Co2O3-Nb2O5系压敏陶瓷材料电学性能的影响。掺入x(TiO2)为1.00%的陶瓷样品具有最高的密度(r = 6.82 g/cm3),最高的视在势垒电场(EB= 476 V/mm),最高的非线性系数(a = 11.0),最小的相对介电常数。未掺杂的样品阻抗最大。随TiO2掺杂量的增加晶粒逐渐变小,晶粒尺寸的减小归因于未固溶于SnO2晶格而偏析在晶界上的TiO2阻碍相邻SnO2晶粒融合。为了解释SnO2-Co2O3-Nb2O5-TiO2系电学非线性性质的根源,对前人的晶界缺陷势垒模型进行了修正。
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| 关 键 词： | 压敏材料 二氧化锡 电学性能 晶粒尺寸 缺陷势垒模型 |
| 文章编号： | 1001-2028(2004)06-0020-03 |
Grain Size Effects of (Nb, Co)-doped SnO2 Varistors Ceramics Induced by TiO2-dopant |
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| MING Bao-quan,WANG Jin-feng,CHEN Hong-cun,SU Wen-bin,ZANG Guo-zhong,GAO Jian-lu.Grain Size Effects of (Nb, Co)-doped SnO2 Varistors Ceramics Induced by TiO2-dopant[J].Electronic Components & Materials,2004,23(6):20-22,27. |
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| Authors: | MING Bao-quan WANG Jin-feng CHEN Hong-cun SU Wen-bin ZANG Guo-zhong GAO Jian-lu |
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| Affiliation: | MING Bao-quan1,WANG Jin-feng1,CHEN Hong-cun1,SU Wen-bin1,ZANG Guo-zhong1,GAO Jian-lu2 |
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| Abstract: | Investigated were the effects of TiO2 on the electrical properties of (Nb , Co)-doped SnO2 varistors ceramics. Obtained ceramic samples (SnO2-Co2O3-Nb2O5 system) have the highest density (r = 6.82 g/cm3), the highest varistor field (EB = 476 V/mm), the highest nonlinear coefficient (a=11.0) and the lowest relative dielectric constant when 1 mol% TiO2 was doped. The SnO2 grain size decreases with increase of TiO2 amount. In order to explain the origin of the voltage nonlinearity for SnO2-Co2O3-Nb2O5-TiO2 varistor ceramics, a modified grain-boundary defect barrier model was proposed. |
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| Keywords: | varistor material SnO2 electrical properties grain size defect barrier model |
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