地基激光驱动空间碎片降轨特性研究

为了研究小尺度空间碎片的降轨特性,建立了空间碎片自旋与非自旋模型,理论分析了地基激光作用下碎片速度的变化规律,在此基础上研究了激光辐照作用下空间碎片的变轨模型。采用理论仿真的方法,分析了在高能脉冲激光作用下空间碎片的近地点与远地点高度、半长轴及偏心率随初始真近角的变化规律。结果表明,地基激光清除空间碎片存在最佳作用区域,自旋碎片在初始真近角86°~151°范围内降轨效果最佳,非自旋碎片在初始真近角130°~162°范围内降轨效果最佳。自旋空间碎片降轨效果明显优于非自旋空间碎片。     

小尺度空间碎片天基激光清除过程研究

选取LEO区域中典型材料的小尺度空间碎片,建立了相应的靶材模型,研究了高能脉冲激光与靶材作用下碎片速度的变化规律。在此基础上建立了激光辐照作用下小尺度空间碎片的变轨模型。通过仿真分析,对高能脉冲激光作用下典型空间碎片轨道参数的变化规律进行了数值模拟。研究结果表明,设定的天基平台激光站能在一个飞行周期内辐照典型材料碎片达到降轨清除的目的,为天基平台激光清除空间碎片技术的应用提供了必要的理论基础。     

可用于高功率脉冲激光的面阵CCD模式测量装置

本文介绍了一种用面阵ＣＣＤ摄像机作探测器的激光光束测量装置。整个装置包括光束衰减器、单脉冲选取及脉冲同步、光束直径匹配、ＣＣＤ摄像机、图像卡、计算机及监示器以及系统软件。软件根据激光混合模的二阶矩阵理论［１］编制，可测量高功率、高重复频率脉冲激光的空间能量分布，并可对所测结果进行模拟。由软件给出所测的光束参数，可对光束质量作出正确评价。     

低重复频率激光光束多参数实时监测系统

为了实现对数10 min一个脉冲,单脉冲能量5 J激光放大器多项输出参数的实时、高效率检测,设计了针对高能量、大截面和低重复频率激光系统输出的测量系统。该测量系统采用Fourier像传递技术,针对激光器的输出特性实现了对输出光束截面的清晰实时监测,并且能够同时检测光束的激光波长、光谱宽度、光斑尺寸、单脉冲能量、重复频率和偏振方向等数据。利用该统计系统能够计算光斑调制度、发散角、指向性、光束质量因子、能量稳定性、平均功率、功率稳定性、脉冲宽度、脉冲稳定性和偏振度等指标。     

空间碎片天基激光辐照下的轨道特性仿真分析

厘米级空间碎片对在轨航天器的威胁极大,高能激光辐照使其降轨进入大气层烧毁是近年来的研究热点。针对空间站附近厘米级空间碎片,利用天基平台搭载高能激光器,提出了多脉冲激光降轨的计算方法。仿真结果表明,天基平台激光清除厘米级空间碎片的前提是空间碎片处于清除窗口,清除窗口的选择是能否实现空间碎片降轨的关键;根据已有的激光器及天基平台参数,空间碎片多脉冲激光降轨可以达到清除效果;多脉冲降轨结果表明,空间碎片偏心率变化较大,造成其半长轴与远地点变化幅度很小而近地点变化幅度很大,而轨道倾角变化幅度很小;当降轨幅度相同时,需要施加的多脉冲速度增量总和与一次性施加的单脉冲速度增量基本相同,但降轨效果相差较大,不能通过一次单脉冲计算近似表示多脉冲降轨效果。通过上述问题的研究,为进一步实现空间碎片天基激光探测清除一体化仿真研究奠定基础。     

地基激光辐照近地轨道小尺度空间碎片作用规律研究

通过研究脉冲激光与铝靶碎片的膨胀运动以及冲量耦合的相互作用,仿真分析了铝靶碎片在等离子体作用下的速度和压力时空分布规律以及冲量耦合系数与激光功率密度之间的定量关系;在此基础上,建立了基于地基的脉冲激光辐照近地轨道小尺度空间碎片动力学变轨仿真模型,模拟研究了近地轨道小尺度空间碎片移除过程中轨道偏心率与近地点高度随激光脉冲数目变化的影响规律。结果表明:在最优冲量耦合系数作用下,当脉冲数目达到180次轨道偏心率为0.071时,基于此文的条件可实现近地轨道小尺度空间碎片的有效移除。预期成果可为高能激光移除近地空间碎片技术的应用提供技术指导。     

天基激光清除小尺度空间碎片变轨模型研究

通过选取LEO区域中两种典型材料的小尺度空间碎片,分别建立了相应的强激光与靶材的冲量耦合模型,研究了高能脉冲激光与靶材作用下碎片速度的变化规律。在此基础上建立了激光辐照作用下小尺度空间碎片的变轨模型。通过仿真分析,对假定功率激光器作用下两种典型材料空间碎片轨道参数的变化规律进行了数值模拟,并讨论分析了碎片自旋角速率及不同功率的激光器对碎片清理效能的影响规律。研究结果表明,在假定功率的天基平台激光器作用下能在一个飞行周期内辐照两种典型材料碎片达到降轨清除效果,为天基平台激光清除空间碎片技术的应用提供了必要的理论基础。     

强激光清除空间碎片的力学行为初探

给出强激光清除空间碎片过程中 ,随推进深度的变化 ,激光功率密度的改变及相应的推进速度。根据流体力学问题 ,推导出强脉冲激光作用在空间碎片上时的烧蚀率 ,及碎片受到的推力。以空间碎片其中的一种成分铝为例 ,模拟计算出在一个强脉冲的作用下 ,激光的烧蚀质量 ,相应的烧蚀率 ,碎片受到的推力 ,及耦合系数等物理量的数值     

利用光谱测量脉冲激光频率的稳定性

多普勒测风激光雷达中脉冲激光频率的稳定性是一个重要参数.使用高分辨率F-P标准具的多光束干涉法来测量脉冲激光频率稳定度.其原理是将脉冲激光的多光束干涉成像到面阵CCD上,通过测量中心干涉环直径的变化来获得脉冲激光的频率稳定性.利用此方法对波长为1.064μm,重复频率为1 Hz的被动调Q Nd:YAG激光器,连续测量20 min,获得1 200幅图像.通过对这些图像进行移动平均、阈值选定、循环比较、三阶样条插值等数值方法处理,结果表明其长期稳定性优于10-7.     

激光脉冲和工件参数对激光微孔加工质量的影响

研究了激光功率、重复频率、焦点位置以及光束质量对激光打孔质量的影响。通过调整和优化激光脉冲、聚焦光学系统和工件参数，在０．１～２ｍｍ厚的不同材料上打出孔径０．０６～０．２ｍｍ的精密小孔。利用ＴＥＭ００模激光脉冲和望远镜扩束后再聚焦的办法，加工出孔径２５～３０ｍｍ的微孔。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its