基于C8051F020和Atmega16的无线温度测量系统设计

提出了基于片上系统C8051F020和AVR单片机Atmega16无线温度测量系统的研发方案,同时结合C8051F020和Atmega16两个微处理器,给出了CPU结构和独立的温度补偿方案,同时介绍了无线测温系统的主要特点和硬件系统各模块的功能和特点,并对主控制模块和无线发射模块的软件设计进行了论述。实际测试表明．本设计可以使温度测量的速度和精度有效提高,同时可提升系统的稳定性。     

单片机液晶显示系统的设计

以C8051F单片机和液晶显示控制器KS0108为核心,设计了单片机控制的液晶显示系统。重点研究了图形的动态显示技术,介绍了液晶显示模块的硬件、软件特性。文中设计的电路在C8051F020单片机仿真实验系统上进行了仿真,实验结果表明,设计达到了预期目标。     

基于C8051F020的船载卫星电视接收系统

船载卫星电视接收天线为三轴捷联式陀螺稳定系统,该系统可以隔离船体的运动,实现天线相对于大地的稳定性并能跟踪卫星.C8051F020单片机是美国Cygnal公司推出的完全集成的混合信号SoC(片上系统).文中介绍了以C8051F020单片机为核心的船载卫星电视接收系统的设计方案,并给出了硬件和软件的实现方法.     

基于USB20C模块的单片机系统与PC机的通信

为了解决单片机系统与PC机间通过RS-232C接口传输数据速度慢的问题,提出了采用专用USB模块-USB20C来设计USB接口电路的方法。通过USB20C与高性能单片机C8051F020的硬件连接。实现了数控切割系统中C8051F020与PC机的高速数据通信,并给出了C8051F020端软件的具体实现。该方法避免了开发USB接口驱动程序,传输速率快,可靠性高,很好地满足了数控系统的实时性要求。对采用USB接口传输数据的应用系统设计有一定的参考价值。     

利用C8051F020系列单片机实现智能仪器开发

简单介绍C8051F020系列混合信号单片机,简述利用该单片机进行智能仪器开发的基本方法.并在此基础上简要介绍一种利用C8051F020单片机实现的基于Ka、Ku、X三个波段的简易一次雷达系统构成的用于测量特定物质燃烧火焰特性的微波测量系统,及简述该系统的组成、工作原理以及实现方法.     

基于C8051F020单片机的多路压力测量仪

介绍了一种基于C8051F020单片机的多路压力测量仪.该测量仪选用电阻应变式压力传感器采集压力信号,并经放大电路处理后送入C8051F020单片机,再由C8051F020单片机内部的A/D转换器将采集到的压力信号进行模数转化,然后分别对数据进行存储和显示.该测量仪能测量6路压力信号,并且各测量点都能单独检测和设置.由于采用了C8051F020单片机,简化了硬件电路,增强了抗干扰能力,使得测量仪具有测量精度高,冲击小等特点.     

C8051F020单片机及其在总磷在线自动分析仪中的应用

C8051F020是Cygnal公司生产的混合信号系统级单片机 ,片内集成了CIP-51的CPU内核 ,且指令系统与MCS-51完全兼容。文章介绍了C8051F020的性能特点 ,给出了基于C8051F020单片机的总磷在线自动分析仪的设计构成及应用程序流程。     

用C8051F020主控的液晶显示模块FM12232C及其应用

介绍了C8051F020单片机和图形点阵液晶显示模块FM12232C的性能特点，分析了在单片机C8051F020主控下FM12232C的硬件接口电路和软件设计方法，利用该方法可成功实现对液晶模块的控制和汉字显示。     

C8051F020单片机在磁致伸缩位移传感器中的应用

介绍了一种基于C8051F020单片机的数据采集系统,叙述了磁致伸缩线性位移传感器的工作原理、C8051F020单片机性能等,通过C8051F020单片机组成的硬件电路对磁致位移传感器数据进行采集,将采集到的位移数据进行滤波、放大、转换并在液晶显示器上显示出来。     

基于C8051F020单片机的电机变频遥控控制系统

本文介绍了以C8051F020单片机为核心的遥控控制系统,该系统主要由遥控发射器和C8051F020单片机控制的接收电路以及输入检测、输出控制电路组成。系统结构灵活、成本低,易于扩充和修改。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-