网络中心战思想的发展及其对军事信息系统网络的影响

美军正在积极进行网络中心战的研究和实践，已取得显著的成效。网络中心战已成为目前作战模式的主导趋势，为了给网络中心战提供网络中心环境，美军又在加速开发全球信息栅格（GIG），随着网络中心战能力的日趋成熟。发展军事信息网络对抗能力也日趋迫切和重要。军事信息网络对抗的研究。必须从网络的角度上展开，并且应该建立在深入研究网络中心战的基础之一。而不仅仅是对因特网网络战研究的延伸。     

体系对抗的发展方向——GIG对抗

美军为了适应网络中心战的要求,实现全球打击战略,在2000年就启动了全球信息栅格（GIG）计划。给出了GIG定义及其发展目标,分析了GIG体系结构和特征,找出了其薄弱环节,对GIG的对抗提供了参考。     

基于传感器网络的网络中心战构建模型研究

基于传感器网络的网络中心战是利用网络内部和网络之间信息域中高质量的信息共享,实现军事人员认知域态势感知共享,是信息时代的一种新兴的作战模型,体现了“兵力分散、火力集中”的信息化战争作战思想。主要介绍了传感器网络的特点和应用,分析了网络中心战的实质和结构,建立了网络中心战的构建模型。指出该模型时信息化作战条件下联合作战的实施具有一定的指导意义。网络中心战模型实现了所有作战单元的互连互通和互操作,提高了战斗力。     

网络中心战:一种作战新理论

首先给出了网络中心战的定义以及美国网络中心战的组成和关犍技术。尽管美军进行网络中心战有较大的技术优势,但也存在一些突出困难和问题,就美军网络中心战的缺陷,给出了几种攻击方式,通过对网络中心战的攻击大大降低了网络中心战的作战能力。介绍了目前欧洲各国在网络中心战方面的发展情况,并且给出了欧洲一些主要国家的网络中心战装备。最后就网络中心战的作战优势给出了网络中心战对未来战争的影响。     

基于用户驱动的网络中心战指挥控制系统研究

指挥控制系统是网络中心战实施的关键环节。通过对网络中心战指挥控制系统的研究, 提出一种基于用户驱动的指挥控制系统概念模型, 并以战役对抗为例, 实现了一种网络中心战的指挥控制系统作战流程, 并在VStasker仿真平台上进行了对抗部分的仿真和验证, 对网络中心战指挥控制系统的具体实现进行了有益的探索。     

美军GIG3．0进展研究

全球信息栅格（GIG）是美军正在建设的重要基础设施,是美军实现网络中心战而制定的最优先计划。文章跟踪了GIG的发展历程,在分析GIG2．0缺点的基础上,引出GIG3．0的几个关键点和重要概念,包括作战网络域、敏捷虚拟飞地、虚拟安全飞地等。GIG3．0立足于以作战司令部为中心的赛博空间作战,通过MPLS、IPSEC、GRE、虚拟化等重要技术构建穿越不同军事网络的虚拟安全飞地,同时,用户客户端也支持对不同安全等级军事网络的访问,这使得美军的网络化作战能力得以安全、高效地实施。     

全球信息网格体系结构与企业级服务分析

作为网格计算发展的延伸，DoD提出的全球信息网格(GIG)是实现网络中心战的技术手段。GIG的体系结构可以通过其五层体系框架和作战视图、系统视图以及技术视图3个视图来描述。GIG通过企业级服务来支持网络中心战，企业级服务的领域功能都建立在发现、安全、中介、协作、存储、消息传送、企业级服务、应用以及帮助等核心企业级服务基础之上。介绍了网格以及全球信息网格的概念，分析了GIG的体系结构与企业级服务，最后指出了GIG的意义和面临解决的问题。     

网络中心战及网格技术

网格技术是实现网络中心战的基础。概述了美国海军提出的网络中心战概念,介绍了由信息网、探测网、作战网和指挥网4个虚拟网组成的网络中心战作战结构和由CEC、Link-16和IT-21技术组成的技术结构,提出了实现网络中心战的一些难点问题。     

联合信息环境JIE 及其安全研究

全球信息栅格(GIG)是美军为网络中心战建设的重要基础设施,而联合信息环境(JIE)是美军基于安全性考虑,对整个GIG重新设计而提出的,它将成为GIG的下一代战略储备。文中跟踪了JIE的研究进展,挖掘出美军提出JIE的深层原因,分析了JIE的特点、关键建设领域、理想的终极状态。同时,对JIE的统一的安全体系结构和统一的身份和访问管理解决方案进行了剖析,文中最后全面深入地研究了JIE的安全功能。     

全球信息栅格信息保障(上)

全球信息栅格(GIG)是美军正在建设的重要基础设施,也是美军成功实施网络中心战的关键.本文主要介绍了美军GIG信息保障的目标及重要举措,包括出台信息保障战略计划、制定信息保障政策、在GIG体系结构中融入信息保障、实施深度防御策略、重视日常工作.     

面向服务的战场态势感知与协同技术研究

阐述了网络中心作战和先进信息技术条件下的新型战场态势图应用的任务需求,论述了先进的战场态势感知服务体系结构组成和能力,描述了态势图应用基本概念和数据模型,针对实际应用提出了基于门户服务的态势图协同标绘实现方法,为网络中心的联合作战态势感知提供了一种新的应用模式,并且能指导军事指挥组织更快和更好地同步规划和决策。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.