先验信息可信度在成败型试验中的应用

本文针对成败型试验评估中验前信息“淹没”现场信息的问题,提出了先验信息的使用由先验可信度的大小来决定的方法,研究了验前信息对Bayes估计和检验的影响.以导弹命中率的估计和检验为例,说明了当考虑验前信息可信度时,现场信息能避免被大量先验信息所淹没,能得到更合理的结论.为利用验前信息进行参数估计和检验提供了理论依据.     

关于样本容量、验前信息与Bayes决策风险的若干讨论

针对工程实际中所普遍存在的小子样问题,分析验前信息和样本容量大小对Bayes决策的影响.将验前费用和试验费用引入到损失函数中,研究样本容量大小、验前信息以及Bayes决策风险三者之间的关系.并在给定决策风险上限和总费用的条件下,理论上推导样本容量大小、验前信息的可信度、总费用以及Bayes决策风险关系式,从而为小子样条件下,找到验前信息可信度的保证下限提供了理论依据.     

确定电子产品MTBF增长的Bayes方法

本文用Bayes方法估计经历研制试验的电子产品失效率(或MTBF)问题。进行了m组寿命试验,其失效率满足条件:λ_1>λ_2>…>λ_m。感兴趣的参数是产品最后阶段的失效率λ_m。在取没有验前知识的共轭型验前分布时,容易得到λ_m的边缘验后概率密度函数。为了满足工程实践的需要,推导了近似解,并举例说明。     

混合验前分布下的小子样装备维修性验证方法

针对具有多源验前信息的小子样装备维修性指标验证问题,当多源验前信息来自不同总体时,提出了一种混合验前分布下的小子样装备维修性验证方法.结合Bootstrap法,确定了各验前信息的验前分布,改进了基于质量因子的可信度加权融合方法,定义了均值可信度权重因子和样本量可信度权重因子,权重计算结果更加科学合理,推导给出了混合验前分布下的Bayes序贯概率比方法.结合某装甲装备维修性验证试验,对MTTR进行验证,结果表明:所提方法能有效验证装备维修性指标是否符合设计要求.     

基于小样本Bayes理论的可靠性评估方法

针对产品由于研制中造价昂贵、试验费用高无法投入大量试验样品出现的小样本问题,提出了充分融合各种验前信息,研究了常见验前信息分布、验前信息的获取方法、验前信息的可信度确定,将Bayes方法技术运用于性能退化轨迹模型的建模过程中,有效地解决了产品性能退化模型建模不精确的问题。     

Weibull分布下的系统可靠性评估方法研究

在Weibull分布的定时截尾样本中,对可靠性、可靠寿命和失效率这3种参数的验前分布及形状参数的验前信息进行了分析。论述了结合熵损失函数来求得系统可靠度及寿命的Bayes点估计和置信下限,为大型系统的可靠性评估提供了一种重要的理论依据。     

Weibull分布航天产品可靠性评估的MMLE-Bayes方法

航天产品现场使用数据具有小子样、零失效的特点，要实现其工程化可靠性评估，需要充分利用各种环境下的试验信息和相似型号产品的试验信息及使用信息，因此，提出了一种适用于Weibull分布航天产品可靠性综合评估的MMLE—Bayes方法。首先通过MMLE方法得到额定任务时间可靠度的置信下限估计，再通过构造合理的验前分布实现Bayes可靠性评估。在此过程中，为合理融合各来源的验前信息，提出了环境因子和相似因子的概念及其估计方法。最后通过一种航天产品的可靠性评估实例，说明了MMLE—Bayes—Weibull方法的的实用性和有效性。     

大型电子系统可靠性分析及评估方法研究

针对目前大型电子系统任务可靠性评估中,试验样本需求量大,试验费用高、评估时间长,以及评估指标高的特点,提出融合多源验前信息的小样本大型系统Bayes评估法解决这一问题的途径.该方法综合考虑各种因素对大型系统可靠性评估的影响,当试验样本较小时仍能做出准确的估计,最后以某型大型电子系统任务可靠性评估为例,验证了该方法的可行性和有效性.     

电子器件生存概率及置信度的Bayes计算方法

针对工程实践中经常遇到的小子样问题,分别以无信息分布、正态分布、产生正态性能分布作为电子器件生存概率随机变量的验前分布,给出了二项抽样实验验后生存概率密度的具体形式,根据某电子器件电流损伤阈值实验数据,得到特定辐射环境下器件生存概率的Bayes点估计、一定置信度下的双边估计、单边估计。仿真结果表明,产生正态性能验前分布要优于无信息分布和正态验前分布,该方法可以应用到工程实践中。     

逐次截尾样本下电子元件混联系统可靠性指标的EB估计

在逐次截尾样本下,研究电子元件混联系统可靠性指标的估计问题。将Bayes方法和极大似然法相结合,在平方损失下,获得部件失效率、系统可靠度和平均寿命的经验Bayes估计。最后给出随机模拟例子,说明该方法的正确性。结果表明可靠性指标的经验Bayes估计值精度较高。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.