半导体材料辐射效应的表征与分析

在辐射环境中,电子系统常用的半导体器件及电路会出现不同程度的性能退化,甚至发生失效.其根本原因来源于辐射致组成半导体器件的材料内部缺陷的产生和积累.表征和分析辐射致材料内部缺陷的种类、浓度、分布等信息,是半导体材料辐射效应研究的重要内容.从辐射致缺陷微观形貌、结构特征,及其引起的宏观电效应三方面,归纳总结了几种重要的半导体材料辐射效应的表征和分析方法,分析了每种方法的优缺点及适用范围,并指出半导体材料辐射效应表征与分析技术发展的方向,可为电子器件、半导体材料辐射效应领域的研究人员提供参考.     

半导体可饱和吸收镜实现高频脉冲激光研究进展

介绍了作为固体激光器、半导体激光器和光纤激光器被动锁模吸收体的半导体可饱和吸收镜(SESAM)的基本原理和制作方法。详细阐述了利用半导体可饱和吸收镜对同体激光器和光泵垂直外腔面发射半导体激光器进行被动锁模，获得重复率为几吉赫到几百吉赫的超短脉冲激光的方法。     

Radiation patterns of higher azimuthal order spatial modes from aconcentric-circle-grating waveguide cavity using the volume-currentmethod

We calculate the surface-emitted scattered radiation from a concentric-circle-grating waveguide cavity. The full vector form of the scattered radiation is calculated using the volume-current method, where the index perturbation caused by the grating is represented as an induced-current driving term in the free-space wave equation for the scattered field. We show intensity patterns and field vector plots for a range of azimuthal modes besides the previously reported fundamental mode, and we find excellent agreement with the observed emission patterns and field polarization from concentric-circle-grating surface-emitting semiconductor lasers     

InP基应变自组装纳米材料及其光电子器件研究进展

半导体低维结构材料,如量子线(点)材料,由于其特殊的电子结构,在新一代光电子、微电子器件中有着重要的应用价值。本文对应变自组装InP基量子线(点)材料的生长制备、光学和电学特性及其在半导体激光器、红外探测器及其他光电子和微电子器件中的应用进行了综述,指出了目前需要改进的一些方面,并提出了一些相应的解决途径。     

基于GaInAs/AlInAs中红外量子级联激光器的自洽电子子带能级结构研究

中红外(Mid-infrared, MIR)量子级联激光器(Quantum Cascade Laser, QCL）已被广泛应用于定向红外对抗、自由空间光通信、痕量气体传感等重要领域。利用Nextnano++软件进一步完善了自洽计算基于MIR QCL器件的薛定谔方程和泊松方程的理论方法。针对InP衬底上生长的GaInAs/AlInAs多量子阱MIR QCL器件,研究了四能级双声子共振QCL结构中有源区的电子子带能级结构,并对这些子带能级随器件工作温度、驱动电场、注入区掺杂浓度等变化的规律进行了系统研究,获得了与实验结果一致的理论结果。此工作为MIR QCL器件的生长和制备提供了理论设计和研究方法,为了解器件工作条件提供了理论预期,也为进一步提高MIR QCL的发光功率和效率提供了理论研究支撑。     

半导体量子点的器件应用

半导体量子点的生长和性质已成为当今研究的热点。以Ｓ－Ｋ生长模式已成功地生长了无缺陷的半导体量子点。由于其较强的量子效应,量子点结构的光电器件和电子器件有望比量子阱结构的器件具有更好的性能。介绍了量子点在光电器件中的一些应用,包括单电子晶体管、激光器和红外探测器等。     

GaN and other materials for semiconductor spintronics

Existing semiconductor electronic and photonic devices use the charge on electrons and holes to perform their specific functionality, such as signal processing or light emission. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. The use of such devices depends on the availability of materials with practical magnetic-ordering temperatures. Here, we summarize recent progress in the development of GaN and other wide bandgap semiconductors that retain ferromagnetic properties above room temperature.     

Free Electron Lasers as a High-power Terahertz Sources

Free electron lasers (FEL) are the lasers which utilize the phenomenon of stimulated undulator radiation. Now they are the most powerful sources of electromagnetic radiation with frequency tunable from 1 to 10 THz. Contrary to most lasers, motion of an electron in the FEL may be described by classical mechanics and classical electrodynamics. Therefore they belong to the family of vacuum electronic devices, such as traveling wave tubes or klystrons. The basics of the FEL physics are discussed. General considerations are clarified through some examples. The Novosibirsk THz FEL is described briefly.     

能带工程在激光器中的应用

随着MBE和MOCVD生长技术的发展,已能生长出高质量超薄层的外延材料,使能带工程技术成为目前国内外的热门研究课题。该技术可使光电器件和电子器件的性能得到明显的改进和提高。本文主要论述了能带工程在半导体激光器中的应用。     

漏光波导机制四元系半导体激光器

给出了漏光波导机制在四元系长波长半导体激光器中的一个应用实例。从理论上证明了漏光波导机制在四元系半导体材料中应用的可行性,并设计了相应结构的激光器件;然后由LPE技术获得这一器件。实践证明,理论和实验结果符合得很好。     

Radiation testing of semiconductor devices for space electronics

Radiation effects testing, part selection, and hardness assurance for application to electronic components in the natural space environment are discussed. The emphasis is on semiconductor devices, primarily silicon microcircuits, which are used in the greatest quantity and which, in most cases, are the most sensitive. After a summary of the natural space radiation environment and the effects of radiation on semiconductor devices, laboratory simulation of space radiation and extrapolation to space are covered. Radiation testing is performed to understand failure mechanisms, to characterize the radiation response of specific devices, and to provide data for lot acceptance. Part selection and hardness assurance are discussed by contrasting the traditional approach with the unique aspects of space systems. Some recommendations are made for treating the more complex aspects of space system microcircuit hardness assurance     

Integrated optics approach for advanced semiconductor lasers

Recent advances in the field of semiconductor integrated optics are reviewed from the point of view of monolithic integration of semiconductor lasers and other optical components and/or devices. Emphasis is placed on dynamic-single-mode (DSM) lasers, such as DFB and DBR lasers, intended for highly stable single-wavelength light sources for such monolithic integration. The realization of high-performance DSM lasers and the fabrication techniques of monolithically integrated optical devices and circuits are briefly reviewed. A variety of potential applications is discussed.     

高速半导体激光器的设计

高速调制半导体激光器光源是高速光纤通信系统、相控阵雷达等的关键器件。本文分析了影响半导体激光器调制带宽的各种因素，系统地介绍了提高调制带宽的途径，并讨论了高速半导体激光器的典型结构和制造工艺。     

硅基集成光电子器件的新进展

综述了硅基微纳激光器、调制器、探测器及光传输控制器件的最新研究进展.重点阐述了表面等离子体、量子阱、光子晶体及纳米光栅等新型结构在提高器件综合性能和降低器件尺寸方面的重大作用.同时,还展示了用标准互补金属氧化物半导体(CMOS)技术,实现硅基光子器件和电子器件在同一基片上微纳集成的巨大前景.     

高速半导体激光器的设计与制造

对于 Gb/s 量级的光纤通信系统,高速半导体激光器光源是关键器件。文章分析了限制半导体激光器速率的因素,提出了改善激光器带宽的途径,讨论了器件的制造。     

Tunable THz Sources and Their Applications

In this paper, the technology aspects of the THz laser and spectrometric devices, developed over the last decade are described and their applications in various fields of science and technology are explained. The THz sources of importance are the optically pumped lasers, solid state devices and the backward wave oscillator (BWO) based systems. The BWO system offers the electronic tuning and multiplexing facility like Fourier transform technology. The time resolved and frequency domain aspects with relative merits are discussed. Non-linear optical methods of production of monochromatic radiation using second harmonic generation (SHG) are also considered. The important areas of space applications are described in detail. Present status and future directions are indicated.     

An overview of optical device research in China

An overview of research activities in China on the following optical communications devices is presented: quantum-well semiconductor lasers; distributed feedback laser diodes; wideband, tunable, narrow-linewidth, external-cavity laser diodes, semiconductor and doped-fiber amplifiers; laser-diode-pumped solid state and single-crystal fiber lasers; doped fiber ring lasers, optical modulators; switches; bistable devices; experimental wavelength-division-multiplexed (WDM) systems; and time-division photonic switching systems. The most important of these technologies are highlighted with respect to demonstrated achievements in China. The potential uses of these technologies in future telecommunications systems are discussed     

Semiconductor lasers for coherent optical fiber communications

The current status of semiconductor lasers used in coherent optical fiber communications is reviewed for nonexperts in the field. The issues of spectral purity, tuning, modulation, and advanced fabrication methods for photonic integration are discussed, with examples drawn from current experimental devices     

Optics and electronics are living together

The differences between optoelectronic and electronic ICs are identified. Crystal growth and device fabrication techniques for optoelectronic ICs are discussed, focusing on their advantages and disadvantages. Two novel devices that exist only as discrete components and will perform even better when integrated with other components on a monolithic chip are highlighted. One is an integrated passive cavity laser, which overcomes one of the drawbacks of semiconductor lasers, i.e. that they emit light over a relatively wide spectral band and are thus less coherent than other lasers. The other is a surface-emitting laser which emits light normal to its top surface and can therefore be placed anywhere on the substrate     

SiC电力电子器件研究现状及新进展

由于硅材料本身的限制,传统硅电力电子器件性能已经接近其极限,碳化硅(SiC)器件的高功率、高效率、耐高温、抗辐照等优势逐渐突显,成为电力电子器件一个新的发展方向.综述了SiC材料、SiC电力电子器件、SiC模块及关键工艺的研究现状,重点从材料、器件结构、制备工艺等方面阐述了SiC二极管、金属氧化物半导体场效应晶体管(MOSFET)、结晶型场效应晶体管(JFET)、双极结型晶体管(BJT)、绝缘栅双极晶体管(IGBT)及模块的研究进展.概述了SiC材料、SiC电力电子器件及模块的商品化情况,最后对SiC材料及器件的发展趋势进行了展望.