基于电路交换的NoC路由器设计与实现

片上网络（Network-on-Chip, NoC）以网络互连结构代替传统总线结构,很好地解决了片上高性能计算资源之间的通信瓶颈问题。路由器是实现NoC的重要基础部件,本文在分析国内外相关技术的基础上,面向无线通信等要求有保障服务的应用,设计并实现了一个基于电路交换的路由器。该路由器适合Mesh结构,提供5个输入输出端口,支持容量达48Gbit／s的交换,可以提供100％的无阻塞交换能力,并可配置为多播和广播方式。采用Verilog语言完成了所有设计工作,不仅进行了充分的仿真和验证,还使用Altera的FPGA实现了该设计,能够满足片内通信的需要。     

基于软硬件协同的机群数据通信机制的研究与实现

针对各种机群互连网络中，由于软硬件协议之间缺乏紧密的配合，而导致网络提供给最终用户的通信效率较低这一问题。提出了基于硬件描述符机制的网卡设计方法和软硬件协同的思想，设计相应的机群通信协议。实现了高性能的机群互连网络，有效提高了机群用户的通信效率及机群互连网络的通信性能     

一个2D-Mesh上的完全自适应路由器设计

路由器在大规模并行处理机系统(MPP)中,对互连网络通信性能和系统性能发挥起着关键作用.本文根据所提出的完全自适应路由思想——基于通道方向的完全自适应路由,设计了一个2D-Mesh上完全自适应路由算法.进一步,采用了一种新的高速网络互连技术——源同步技术,最终设计、实现了一个高效、简洁的完全自适应路由器,并在Xilinx XACT的CAD工具上进行了模拟验证.     

基于可编程硬件的虚拟路由器数据平面设计与实现

未来网络体系结构创新和验证亟需建设虚拟化网络实验平台,虚拟路由器作为其中的核心组网设备,其结构和性能决定了实验平台的灵活性和承载能力.本文提出基于并行流水线的虚拟路由器数据平面结构,结合并行包分类和异步多指针轮询调度机制,在同一物理底层上实现了多个相互隔离的并行异构路由器.本设计在可编程硬件上进行了原型实现,并结合商用及软件路由器在真实的网络环境中部署、测试与实验.实验结果表明与传统单流水线结构相比,本设计能以更高灵活性和并行性支持异构的路由器实例独立运行;在逻辑资源开销和延时特性未显著增加的情况下,并行虚拟路由器可以达到与硬件可比的线速转发能力.     

2D-Mesh片上网络中通信密集点优化方法

针对2D-Mesh结构片上网络中通信密集点引发的网络拥塞问题,提出了一种分散通信密集点负载的方法,对网络互连结构进行局部调整,增加与大通信量模块相连的路由器数目,并设计了一种基于区域的XY-YX路由算法。仿真结果表明,该方法可以有效地降低通信延时,增大吞吐量。     

一种基于GCC的VLIW编译器指令调度算法

指令调度是编译优化过程中的重要技术。对于VLIW机器来讲，由于机器性能与编译器的设计和实现有很大的关系，指令调度就显得尤为重要。指令调度是在保证语义正确的前提下，改变指令执行的顺序，以提高指令级并行的程度。文章在一个DSP芯片C编译器上的工作基础上，介绍了一种行之有效的指令调度算法，并分析了算法的正确性。     

并行处理的IPv6控制路由器快路径结构实现

提出了一种适用于IPv6路由器的快路径结构.采用NoC结构作为并行处理的基本通信设施,利用其可扩展性及高通信效率的特点,设计实现了包括预处理、输入队列、数据包处理和片上网络四部分的快路径结构,从而实现了分布式IP地址查找与并行IP包交换相融合的并行IP报文处理.测试表明该结构解决了IP路由查找方面的可扩展性差、查找延时大等瓶颈问题,而且在一个NoC结构之上同时实现了并行IP包交换,极大提高交换效率,节省硬件资源.     

基于数据流的指令调度器的设计与实现

文中设计并实现了一个基于数据流的汇编代码CPU指令调度器．该CPU指令调度器基于中国科学院微电子研究所自行研发的Diamond处理器VLIW体系结构,将串行程序流进行重排序从而实现指令的并行发射执行．实验结果表明,通过指令调度器后可显著提高程序的性能．     

并行视频运动估计协处理器设计

本文重点研究通用视频处理器(VSP)中运动估计协处理器的设计。该设计提出了一种将常用的并行SIMD结构与流水线MISD结构相结合的新颖并行视频处理体系结构形式。协处理器中各个模块单独设计，经由指令调用来实现不同的算法。兼顾到不同格式视频序列的通用性以及灵活性等要求，协处理器可以同时激活最多8个同类模块并行协同工作以实现对不同格式图像块的处理。该设计结构非常简单，易于实现。目前，已经通过VSP芯片整体的指令级与功能级仿真与验证。结果表明，当系统时钟为80MHz时，运动估计协处理器与VSP的其它功能部件及指令部件可以有机协调地工作。     

专用网络互连技术概述

由于专用网络各个本地子网（LAN）之间的互连涉及远距离通信，一般通过公共传输系统实现互连，通常由提供物理连接的公共传输系统（如PSTN，ISDN，DDN）或提供链路层链接的公共传输系统（如ATM，帧中继）实现LAN之间的互连，随着公共数据网络的发展，通过公共数据网络（如Internet)实现企业网各个LAN之间的远距离互连变得日益普及。当IP交换技术成为IP骨干路由器的主流技术后，IP主干网通常已经成为IP交换网络，基于MPLS的VPN构建技术已日益成为最主流的技术，本通过对各种专用网络互连技术的描述和比较，给出了他们的性能优势。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.