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1.
石卓  岳世伟 《电子世界》2014,(13):120+122
V680S主设备采用的通信协议是基于Modbus/TCP协议,以以太网为接口与PLC之间进行通信。本文针对音圈振膜生产线中所采用的V680S系列的RFID通信问题进行了测试。首先介绍了V680S与PLC之间的硬件构架,然后对其采用的Modbus/TCP协议进行了介绍,并介绍了Modbus/TCP协议在V680S中的使用。最后通过Sysmac Studio软件实现V680S与PLC之间的通信测试得出实验结果。  相似文献   

2.
曹铭志 《通信技术》2012,45(5):92-94
随着科学技术的快速发展,中国的通讯技术、计算机技术和网络技术也不断地发展壮大,中国的工业自动化控制领域也得到了快速发展,通过运用一些先进的科学技术,把计算机技术,通信技术相结合成功的运用到工业技术中,并利用TCP/IP协议编程实现上位机的数据交换和数据通讯功能,不仅可以形成局域网络体系,而且通过对设备和Internet相连,也可以实现远程监控。这里主要介绍了PLC如何在以太网的基础之上实现与上位机的通信。  相似文献   

3.
Modbus TCP/IP通信协议是在TCP/IP协议栈上嵌入Modbus报文,Modbus协议与以太网的结合扩展了Modbus的应用,该协议已经成为通用的工业通信协议标准之一。现在工业控制领域基于Modbus的通信仍然以串行链路的Modbus RTU为主,所以对Modbus TCP/IP通信协议的研究与应用都非常有意义。分析Modbus TCP/IP协议的总体结构描述,介绍其客户机/服务器模型以及实现客户机/服务器的通信。  相似文献   

4.
Modbus TCP/IP通信协议是在TCP/IP协议栈上嵌入Modbus报文,Modbus协议与以太网的结合扩展了Modbus的应用,该协议已经成为通用的工业通信协议标准之一。现在工业控制领域基于Modbus的通信仍然以串行链路的Modbus RTU为主,所以对Modbus TCP/IP通信协议的研究与应用都非常有意义。分析Modbus TCP/IP协议的总体结构描述,介绍其客户机/服务器模型以及实现客户机/服务器的通信。  相似文献   

5.
由于步进电机控制系统的需要,文中基于Modbus协议,设计了一种PC上位机与STM32下位机之间通信的方法,介绍了STM32的片上外设以及Modbus协议的实现方法,并给出了RS-485通信电路、STM32和上位机的软件设计。通过测试验证了该方法实现了步进电机控制器与PC之间的数据交换,为基于Modbus协议的上、下位机通信系统提供了参考。  相似文献   

6.
基于TCP/Modbus协议的面向多连接信号采集器设计   总被引:1,自引:0,他引:1  
进行了基于Modbus协议和TCP/IP协议相结合的远程网络通信协议的研究。在详细分析TCP/IP协议和Modbus协议的基础上,提出对TCP/IP协议进行精简的设计方法,设计了基于TCP/Modbus协议的面向多连接信号采集器,重点分析了信号采集器和多台计算机通过Internet传输数据的方法。该设计方法能实现及时可靠的TCP/Modbus通信,此协议对系统的硬件和软件要求较低,并成功应用于工程实际,对基于TCP/Modbus协议的工业以太网络的具体应用具有一定的现实意义。  相似文献   

7.
《现代电子技术》2019,(6):179-182
针对与相应控制器配套的远程AI都具有自己通信模式,相对封闭,并且成本相对较高的问题,设计一款基于Modbus通信协议的远程AI模块。模块以STC15W4K32S4单片机为核心,RS 485为通信电路,Modbus-RTU为通信协议,实现与控制器的通信。文中介绍该模块的硬件整体结构设计,重点介绍从站的Modbus通信软件设计,最后进行模块与上位机Modbus通信实验。实验结果表明,该模块可实现对模拟量数据的采集并通过Modbus协议与上位机进行通信,而且该模块只需要一些简单的设置,便可实现通信。  相似文献   

8.
文中介绍设计现场总线设备通过嵌入TCP/IP协议实现单片机设备接入以太网,完成测试计算机与终端设备的远程通信和控制.  相似文献   

9.
王颖 《中国新通信》2008,10(9):30-33
文中介绍设计现场总线设备通过嵌人TCP3P协议实现单片机设备接人以太网,完成测试计算机与终端设备的远程通信和控制。  相似文献   

10.
介绍了一种可进行远程监测和控制的数据采集系统.多个测控节点组成ZigBee无线传输网络,利用GPRS模块连接因特网扩展传输范围,与基于LabVIEW的上位机程序进行TCP/IP协议通信,从而实现远程监控.下位机设计了数据帧和采集控制指令;协调器网关可对数据进行选择性接收和处理,并实现断线后自动连接;上位机完成对采集数据的解析、显示以及保存,并能发送控制指令.  相似文献   

11.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.  相似文献   

12.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.  相似文献   

13.
This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.  相似文献   

14.
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.  相似文献   

15.
The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.  相似文献   

16.
Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.  相似文献   

17.
We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.  相似文献   

18.
Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources' evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping (266 nm) at power densities of 25-153 kW/cm^2. The full width half maximum (FWHM) of the lasing mode is 0.67 nm  相似文献   

19.
By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.  相似文献   

20.
正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-  相似文献   

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